2SA1770 / 2SC4614 Ordering number : EN3578A SANYO Semiconductors DATA SHEET 2SA1770 / 2SC4614 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings (--)180 (--)160 V VEBO IC (--)6 V (--)1.5 A Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg 2SA1770S-AN 2SA1770T-AN 2SC4614S-AN 2SC4614T-AN 1.0 4.5 1.0 W °C • Package : NMP(Taping) • JEITA, JEDEC : SC-71 • Minimum Packing Quantity : 2,500 pcs./box 1.05 A 1 °C Product & Package Information 2.5 (--)2.5 150 unit : mm (typ) 7540-001 1.45 V --55 to +150 Package Dimensions 6.9 Unit VCBO VCEO Marking(NMP(Taping)) A1770 RANK C4614 LOT No. RANK LOT No. 0.6 1.0 0.5 15.0 0.9 1 2.54 2 3 0.45 2.54 Electrical Connection 1 : Emitter 2 : Collector 3 : Base 2 SANYO : NMP(Taping) 3 2 3 1 2SA1770 1 2SC4614 http://www.sanyosemi.com/en/network/ 82212 TKIM TC-00002805/90503TN (KT)/83198HA (KT)/6040TA (CQ) No.3578-1/7 2SA1770 / 2SC4614 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ VCB=(--)120V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA VCE=(--)5V, IC=(--)10mA 140* max Unit (--)1 μA (--)1 μA 400* 80 VCE=(--)10V, IC=(--)50mA 120 VCB=(--)10V, f=1MHz MHz (22)14 VCE(sat) VBE(sat) IC=(--)500mA, IB=(--)50mA V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. pF (--200)130 (--500)450 (--)0.85 (--)1.2 (--)180 mV V V (--)160 V (--)6 V 40(40) ns (0.7)1.2 μs (40)80 ns * : The 2SA1770/2SC4614 are classified by 100mA hFE as follows : Rank S T hFE 140 to 280 200 to 400 Switching Time Test Circuit 2SA1770 2SC4614 IB1 IB2 PW=20μs D.C.≤1% VR RB + 50Ω 100μF VBE=5V IB2 OUTPUT INPUT RL + IB1 PW=20μs D.C.≤1% VR RB + 50Ω 470μF OUTPUT INPUT 100μF VCC= --100V IC=10IB1= --10IB2= --0.7A VBE= --5V + RL 470μF VCC=100V IC=10IB1= --10IB2=0.7A Ordering Information Package Shipping 2SA1770S-AN Device NMP(Taping) 2,500pcs./box 2SA1770T-AN NMP(Taping) 2,500pcs./box 2SC4614S-AN NMP(Taping) 2,500pcs./box 2SC4614T-AN NMP(Taping) 2,500pcs./box memo Pb Free No.3578-2/7 2SA1770 / 2SC4614 IC -- VCE --1.8 --1.2 Collector Current, IC -- A A --20m --10mA --5mA --1.0 --0.8 --0.6 --0.4 --2mA --0.2 --1mA --1 --2 --3 --4 --1.5mA --1.0mA --0.2 2mA 0.4 1mA IB=0 0 1 2 3 4 A 4.0m A 3.5m m 3.0 A 0.8 2SC4614 4.5mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 --0.5mA 0 0.5mA IB=0 0 --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V IB=0 0 --50 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 5 0 0.2 0.4 --25°C 7 5 3 2 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 ITR04576 hFE -- IC 2SC4614 VCE=5V 7 5 DC Current Gain, hFE Ta=75°C 25°C 0.4 1000 7 2 0.8 ITR04575 2SA1770 VCE=--5V 3 1.2 0 --1.2 hFE -- IC 1000 DC Current Gain, hFE 50 ITR04574 Ta= 75°C 25°C --25°C Collector Current, IC -- A Ta= 75°C 25°C --25°C Collector Current, IC -- A --0.4 10 40 2SC4614 VCE=5V --0.8 100 30 IC -- VBE 1.6 --1.2 0 20 Collector-to-Emitter Voltage, VCE -- V 2SA1770 VCE=--5V 0 10 ITR04573 IC -- VBE --1.6 5 ITR04572 IC -- VCE 1.0 5. 0 --2.0mA --0.4 0.6 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A A --5.0m A .5 --4 m A --4.0m A m .5 3 ---3.0mA --2.5mA --0.6 10mA 5mA 0.8 ITR04571 2SA1770 --0.8 20mA 0 --5 IC -- VCE --1.0 1.0 0.2 IB=0 0 1.2 50mA 40mA 30mA 1.4 m A Collector Current, IC -- A --80mA A --60m A --40m --1.4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- A 2SC4614 1.6 --1.6 0 IC -- VCE 1.8 2SA1770 3 Ta=75°C 25°C 2 --25°C 100 7 5 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 3 ITR04577 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR04578 No.3578-3/7 2SA1770 / 2SC4614 f T -- IC 3 2SC4614 2 2SA1770 100 7 5 3 2 (For PNP, minus sign is omitted.) 10 0.01 2 3 5 7 3 5 Collector Current, IC -- A VCE(sat) -- IC 7 --1000 7 5 3 2 °C 25 --100 7 5°C Ta=7 °C --25 5 3 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 Ta=--25°C 7 75°C 3 25°C 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 op era tio 0.1 7 5 n 3 2 0.01 7 5 3 Single pulse Ta=25°C (For PNP, minus sign is omitted.) 5 7 1.0 2 3 5 7 5 10 2 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 7 2 10 3 5 VCE(sat) -- IC 3 ITR04585 7 100 ITR04580 2SC4614 IC / IB=10 1000 7 5 3 2 100 25 7 °C Ta=75°C 5 C --25° 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 ITR04582 VBE(sat) -- IC 2SC4614 IC / IB=10 5 3 2 1.0 Ta=--25°C 7 75°C 5 7 0.01 2 3 5 25°C 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A Collector Dissipation, PC -- W DC 3 PC -- Ta 1.2 s 3 2 2 2 3 3 1m 10 10m 0m s s 1.0 7 5 5 Collector Current, IC -- A 2SA1770 / 2SC4614 ICP=2.5A IC=1.5A 3 2 7 ITR04583 ASO 5 10 7 2 2 4 10 3 7 --0.01 461 2 3 5 3 Collector Current, IC -- A 2 2SA1770 IC / IB=10 5 0 2SC ITR04581 VBE(sat) -- IC --1.0 177 2 3 Collector Current, IC -- A --10 2SA Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 3 3 2SA1770 IC / IB=10 2 5 3 1.0 2 1.0 ITR04579 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2SA1770 / 2SC4614 7 (For PNP, minus sign is omitted.) 2 0.1 f T -- IC 100 2SA1770 / 2SC4614 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 5 2 3 ITR04584 2SA1770 / 2SC4614 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR04586 No.3578-4/7 2SA1770 / 2SC4614 Bag Packing Specification 2SA1770S-AN, 2SA1770T-AN, 2SC4614S-AN, 2SC4614T-AN No.3578-5/7 2SA1770 / 2SC4614 Outline Drawing 2SA1770S-AN, 2SA1770T-AN, 2SC4614S-AN, 2SC4614T-AN Mass (g) Unit 0.275 mm * For reference No.3578-6/7 2SA1770 / 2SC4614 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 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Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.3578-7/7