ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8810B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS(V)=20 ID=7A (VGS=4.5V) RDS(ON)＜21Ω (VGS=4.5V) RDS(ON)＜25Ω (VGS=2.5V) RDS(ON)＜33Ω (VGS=1.8V) ESD Protected: 2,000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDS 20 V VGS ±8 V Gate-Source Voltage O Drain Current (Continuous) *AC TA=25 C O TA=70 C Drain Current (Pulse) *B ID IDM O Power Dissipation(1) TA=25 C O TA=70 C Operating and Storage Temperature Range PD 7 5.6 A 30 1.5 1 TJ,TSTG -55 to 150 W O C Packaging Type TSSOP-8 VER 1.2 1 ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE8810B XX + H Halogen - free Pb - free TM : TSSOP-8 Electrical CharacteristicsTA=25 OC unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250uA Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V Gate Leakage Current IGSS VGS=±8V, VDS=0V Static Drain-Source On-Resistance RDS(ON) 20 V 1 uA ±3.5 ±10 uA VGS=4.5V, ID=8A 14 21 VGS=2.5V, ID=7A 17 25 VGS=1.8V, ID=6A 22 33 0.5 1 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.4 Forward Transconductance gFS VDS=5V, ID=6.5A 13 Diode Forward Voltage Maximum Body-Diode Continuous Current VSD ISD=2.5A, VGS=0V 0.79 IS mΩ V S 1.6 V 2.5 A Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time Td(on) Turn-On Rise Time tf Turn-Off Delay Time td(off) Turn-Off Fall Time tf VDS=10V, ID=8A VGS=4.5V VDS=10V, VGS=5V RGEN=3Ω, RL=1.5Ω 13.8 17.94 4.1 5.33 5.6 7.28 6.2 12.4 12.7 25.4 51.7 103.4 16 32 nC ns Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=10V, VGS=0V f=1MHz 1160 104 pF 29 Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B. Repetitive rating, pulse width limited by junction temperature. C. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. VER 1.2 2 ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 3 ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 4 ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information TSSOP-8 Unit: mm VER 1.2 5 ACE8810B Common Drain N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6