ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Description The ACE8601B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Features VDS(V)=20V ID=6A (VGS=4.5V) RDS(ON)<21 mΩ (VGS=4.5V) RDS(ON)<25 mΩ (VGS=2.5V) RDS(ON)<35 mΩ (VGS=1.8V) ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current *AC TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation ID IDM TA=25℃ TA=70℃ PD 6 4.8 24 2.5 1.6 Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 A A W O C Packaging Type DFN3*3-8L VER 1.2 1 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Ordering information ACE8601B XX + H Halogen - free Pb - free NN : DFN3*3-8L Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. 0.52 1 Unit V(BR)DSS VGS=0V, ID=250 uA 20 VGS(th) VDS=VGS, IDS=250uA 0.4 Gate Leakage Current IGSS VDS=0V,VGS=±8V 10 uA Zero Gate Voltage Drain Current Maximum Body-Diode Continuous Current IDSS VDS=20V, VGS=0V 1 uA 2.5 A Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-Resistance V IS RDS(ON) VGS=4.5V, ID=8A 16.2 21 VGS=2.5V, ID=7A 19.4 25 VGS=1.8V, ID=6A 24.4 33 Forward Transconductance gfs VDS=5V,ID=6.5A 13 Diode Forward Voltage VSD ISD=2.5A, VGS=0V 0.67 1.6 13.8 17.94 4.1 5.33 mΩ S V Switching Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 5.6 7.28 td(on) 6.2 12.4 12.7 25.4 51.7 103.4 16 32 Turn-On Time Turn-Off Time tr td(off) VDS=10V, VGS=4.5V, ID=8A VGS=5V, RL=1.5Ω, VDS=10V, RGEN=3Ω tf nC nS Dynamic Input Capacitance Ciss Output Capacitance Coss REVERSE Transfer Capacitance Crss 1160 VGS=0V, VDS=10V, f=1MHz 104 pF 29 VER 1.2 2 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Note: 1. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. 2. Repetitive rating, pulse width limited by junction temperature. 3. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Typical Performance Characteristics VER 1.2 3 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 4 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Typical Performance Characteristics VER 1.2 5 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Packing Information DFN3*3-8L VER 1.2 6 ACE8601B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7