DSS2x101-015A V RRM = 150 V I FAV = 2x 100 A V F = 0.77 V Schottky Diode High Performance Schottky Diode Low Loss and Soft Recovery Parallel legs Part number DSS2x101-015A Backside: isolated Features / Advantages: Applications: Package: ● Very low Vf ● Extremely low switching losses ● low Irm values ● Improved thermal behaviour ● High reliability circuit operation ● Low voltage peaks for reduced protection circuits ● Low noise switching ● Rectifiers in switch mode power supplies (SMPS) ● Free wheeling diode in low voltage converters ● Housing: SOT-227B (minibloc) ●rIndustry standard outline ●rCu base plate internal DCB isolated ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant Symbol Definition Conditions VRRM max. repetitive reverse voltage IR reverse current Ratings VF forward voltage min. typ. 150 V VR = 150 V TVJ = 25 °C TVJ = 25 °C 4 mA VR = 150 V TVJ = 125 °C 10 mA I F = 100 A TVJ = 25 °C 0.91 V 1.09 V 0.77 V 0.99 V TC = 110°C 100 A TVJ = 150°C 0.53 V I F = 200 A TVJ = 125 °C I F = 100 A I F = 200 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case T VJ virtual junction temperature Unit max. rectangular d = 0.5 for power loss calculation only -40 2.1 mΩ 0.40 K/W 150 °C Ptot total power dissipation TC = 25 °C 310 W I FSM max. forward surge current t = 10 ms (50 Hz), sine TVJ = 45°C 1400 A CJ junction capacitance VR = 24 V; f = 1 MHz TVJ = 25 °C IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 962 pF 20110603a DSS2x101-015A Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 150 0.10 -40 Weight A K/W 150 30 °C g MD mounting torque 1.1 1.5 Nm MT terminal torque 1.1 1.5 Nm V ISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second 3000 t = 1 minute V 2500 V 10.5 3.2 mm 8.6 6.8 mm Product Marking abcde Logo YYWW Z Part No. XXXXXX Assembly Code DateCode Assembly Line Ordering Standard Part Name DSS2x101-015A IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Marking on Product DSS2x101-015A Delivering Mode Tube Base Qty Code Key 10 478474 Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x101-015A Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a DSS2x101-015A 300 100 100 10 TVJ=150°C 1 125°C IR IF 10000 [mA] [A] 10 CT 1000 100°C [pF] 0.1 75°C TVJ = 150°C 125°C 25°C 0.01 50°C 25°C 1 0.0 0.2 0.4 0.6 0.8 1.0 TVJ = 25°C 100 0.001 0 40 80 VF [V] 120 160 0 40 VR [V] Fig. 1 Maximum forward voltage drop characteristics 80 120 160 VR [V] Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT vs. reverse voltage VR 140 160 120 120 100 IF(AV) d = 0.5 DC P(AV) 80 [W] [A] 80 d= DC 0.5 0.33 0.25 0.17 0.08 60 40 40 20 0 0 0 40 80 120 0 160 TC [°C] 50 100 150 IF(AV) [A] Fig. 4 Average forward current IF(AV) vs. case temperature TC Fig. 5 Forward power loss characteristics 1 ZthJC 0.1 D=0.5 0.33 0.25 0.17 0.08 Single Pulse [K/W] Note: All curves are per diode 0.01 0.001 DSS 2x101-015A 0.01 0.1 1 10 t [s] Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, conditions and dimensions. © 2011 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20110603a