IXYS DPF60C300HB

DPG 60 C 300 QB
V RRM =
300 V
I FAV = 2x 30 A
t rr =
35 ns
HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DPG 60 C 300 QB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-3P
Conditions
●rIndustry standard outline
●r compatible with TO-247
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
CJ
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
typ.
max.
Unit
300
V
VR = 300 V
1
µA
VR = 300 V
TVJ = 150 °C
0.1
mA
TVJ = 25 °C
1.34
V
1.63
V
1.06
V
1.39
V
TC = 135°C
30
A
TVJ = 175°C
0.70
V
IF =
30 A
IF =
60 A
IF =
30 A
IF =
60 A
rectangular
TVJ = 150 °C
d = 0.5
for power loss calculation only
R thJC
t rr
min.
TVJ = 25 °C
TVJ = 25 °C
-55
10.5
mΩ
0.95
K/W
175
°C
TC = 25 °C
160
W
t = 10 ms (50 Hz), sine
TVJ = 45°C
360
A
TVJ = 25 °C
3
A
IF =
TVJ = 125°C
7
A
30 A; VR = 200 V
-di F /dt = 200 A/µs
VR = 150 V; f = 1 MHz
TVJ = 25 °C
35
ns
TVJ = 125°C
55
ns
TVJ = 25 °C
50
pF
Data according to IEC 60747and per diode unless otherwise specified
20100125b
DPG 60 C 300 QB
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
50
0.25
-55
Weight
A
K/W
150
°C
5
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
g
0.8
1.2
Nm
20
120
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Part number
Logo
D
P
G
60
C
300
QB
IXYS
Part No.
Date Code
Order Code
abcd
Ordering
Standard
Part Name
DPG 60 C 300 QB
Similar Part
DPG60C300HB
DPG60C300HJ
DPG60C300PC
DPF60C300HB
DPG80C300HB
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Marking on Product
DPG60C300QB
Package
TO-247AD (3)
ISOPLUS247 (3)
TO-263AB (D2Pak)
TO-247AD (3)
TO-247AD (3)
Delivering Mode
Tube
=
=
=
=
=
=
=
Diode
HiPerFRED
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-3P (3)
Base Qty Code Key
30
501894
Voltage Class
300
300
300
300
300
Data according to IEC 60747and per diode unless otherwise specified
20100125b
DPG 60 C 300 QB
Outlines TO-3P
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100125b
DPG 60 C 300 QB
16
80
0.4 IF = 60 A
30 A
15 A
70
60
14
12
0.3
50
IF
[A]
10
Qrr
TVJ = 150°C
IRM
[µC]
40
IF = 60 A
30 A
15 A
8
[A]
0.2
6
30
20
25°C
TVJ = 125°C
VR = 200 V
10
0.0
0.4
0.8
1.2
VF [V]
1.6
0
2.0
TVJ = 125°C
VR = 200 V
4
0.1
200
400
2
600
0
200
Fig. 2 Typ. reverse recovery charge
Qrr versus -diF /dt
Fig. 1 Forward current IF versus
forward voltage VF
1.4
600
Fig. 3 Typ. reverse recovery current
IRM versus -diF /dt
600
70
TVJ = 125°C
VR = 200 V
1.2
400
-diF /dt [A/µs]
-diF /dt [A/µs]
VFR
tfr
60
1.0
12
500
10
400
8
tfr
300
[ns]
6
200
4
50
trr
[ns]
Kf 0.8
0.6
IF = 60 A
30 A
40
15 A
IRM
30
0.4
Qrr
0.2
0
20
40
80
120
160
0
0
TVJ [°C]
Fig. 4 Dynamic parameters
Qrr, IRM versus T VJ
200
400
-diF /dt [A/µs]
600
Fig. 5 Typ. reverse recovery time
trr versus -diF /dt
16
TVJ = 125°C
VR = 200 V
IF = 30 A
100
0
200
400
-diF /dt [A/µs]
VFR
[V]
2
0
600
Fig. 6 Typ. forward recovery voltage VFR
& forward recovery time tfr vs. diF /dt
1.2
TVJ = 125°C
14
VR = 200 V
1.0
12
Erec
[µJ]
0.8
IF = 15 A
10
ZthJC
30 A
60 A
8
0.6
[K/W]
6
Rthi [K/W]
0.1311
0.1377
0.3468
0.2394
0.095
0.4
4
0.2
2
0.0
0
200
400
-diF /dt [A/µs]
600
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
1
10
100
t [ms]
1000
ti [s]
0.0018
0.002
0.012
0.07
0.345
10000
Fig. 8 Transient thermal impedance junction to case
Data according to IEC 60747and per diode unless otherwise specified
20100125b