DPG 60 C 300 QB V RRM = 300 V I FAV = 2x 30 A t rr = 35 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 60 C 300 QB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-3P Conditions ●rIndustry standard outline ●r compatible with TO-247 ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved typ. max. Unit 300 V VR = 300 V 1 µA VR = 300 V TVJ = 150 °C 0.1 mA TVJ = 25 °C 1.34 V 1.63 V 1.06 V 1.39 V TC = 135°C 30 A TVJ = 175°C 0.70 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A rectangular TVJ = 150 °C d = 0.5 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C -55 10.5 mΩ 0.95 K/W 175 °C TC = 25 °C 160 W t = 10 ms (50 Hz), sine TVJ = 45°C 360 A TVJ = 25 °C 3 A IF = TVJ = 125°C 7 A 30 A; VR = 200 V -di F /dt = 200 A/µs VR = 150 V; f = 1 MHz TVJ = 25 °C 35 ns TVJ = 125°C 55 ns TVJ = 25 °C 50 pF Data according to IEC 60747and per diode unless otherwise specified 20100125b DPG 60 C 300 QB Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 50 0.25 -55 Weight A K/W 150 °C 5 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo D P G 60 C 300 QB IXYS Part No. Date Code Order Code abcd Ordering Standard Part Name DPG 60 C 300 QB Similar Part DPG60C300HB DPG60C300HJ DPG60C300PC DPF60C300HB DPG80C300HB IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Marking on Product DPG60C300QB Package TO-247AD (3) ISOPLUS247 (3) TO-263AB (D2Pak) TO-247AD (3) TO-247AD (3) Delivering Mode Tube = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-3P (3) Base Qty Code Key 30 501894 Voltage Class 300 300 300 300 300 Data according to IEC 60747and per diode unless otherwise specified 20100125b DPG 60 C 300 QB Outlines TO-3P IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100125b DPG 60 C 300 QB 16 80 0.4 IF = 60 A 30 A 15 A 70 60 14 12 0.3 50 IF [A] 10 Qrr TVJ = 150°C IRM [µC] 40 IF = 60 A 30 A 15 A 8 [A] 0.2 6 30 20 25°C TVJ = 125°C VR = 200 V 10 0.0 0.4 0.8 1.2 VF [V] 1.6 0 2.0 TVJ = 125°C VR = 200 V 4 0.1 200 400 2 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 1.4 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 600 70 TVJ = 125°C VR = 200 V 1.2 400 -diF /dt [A/µs] -diF /dt [A/µs] VFR tfr 60 1.0 12 500 10 400 8 tfr 300 [ns] 6 200 4 50 trr [ns] Kf 0.8 0.6 IF = 60 A 30 A 40 15 A IRM 30 0.4 Qrr 0.2 0 20 40 80 120 160 0 0 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 200 400 -diF /dt [A/µs] 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt 16 TVJ = 125°C VR = 200 V IF = 30 A 100 0 200 400 -diF /dt [A/µs] VFR [V] 2 0 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 1.2 TVJ = 125°C 14 VR = 200 V 1.0 12 Erec [µJ] 0.8 IF = 15 A 10 ZthJC 30 A 60 A 8 0.6 [K/W] 6 Rthi [K/W] 0.1311 0.1377 0.3468 0.2394 0.095 0.4 4 0.2 2 0.0 0 200 400 -diF /dt [A/µs] 600 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 1 10 100 t [ms] 1000 ti [s] 0.0018 0.002 0.012 0.07 0.345 10000 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100125b