DPF 60 IM 400 HB final V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 400 V 60 A 60 ns Part number DPF 60 IM 400 HB 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-247 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage min. typ. V VR = 400 V 1 µA VR = 400 V TVJ = 150 °C 0.5 mA IF = TVJ = 25 °C 1.27 V 1.53 V 60 A IF = TVJ = 150 °C 60 A 1.09 V 1.39 V TC = 130°C 60 A TVJ = 175°C 0.76 V I F = 120 A I FAV average forward current threshold voltage rF slope resistance rectangular thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ reverse recovery time junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 4.9 mΩ 0.55 K/W 175 °C TC = 25 °C 275 W TVJ = 45°C 600 A -55 t = 10 ms (50 Hz), sine IF = t rr d = 0.5 for power loss calculation only R thJC Unit 400 I F = 120 A VF0 max. TVJ = 25 °C TVJ = 25 °C 60 A; VR = 270 V -di F /dt = 200 A/µs VR = 200 V; f = 1 MHz TVJ = 25 °C 6 A TVJ = 125°C 12 A TVJ = 25 °C 60 ns TVJ = 125°C 105 ns TVJ = 25 °C 61 pF Data according to IEC 60747and per diode unless otherwise specified 20100216a DPF 60 IM 400 HB final Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 70 0.25 -55 Weight A K/W 150 °C 6 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.8 1.2 Nm 20 120 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Logo Marking on product DateCode Assembly Code Ordering Standard D P F 60 IM 400 HB abcdef YYWW Diode HiPerFRED ultra fast Current Rating [A] Single Diode Reverse Voltage [V] TO-247AD (3) XXXXXX Part Name DPF 60 IM 400 HB Similar Part DPG60IM400QB DPG60I400HA IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved = = = = = = = Marking on Product DPF60IM400HB Package TO-3P (3) TO-247AD (2) Delivering Mode Tube Base Qty Code Key 30 503573 Voltage Class 400 400 Data according to IEC 60747and per diode unless otherwise specified 20100216a DPF 60 IM 400 HB final Outlines TO-247 IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Sym. Inches min. max. Millimeter min. max. A A1 A2 D E E2 e L L1 ØP Q S b b2 b4 c D1 D2 E1 Ø P1 0.185 0.209 0.087 0.102 0.059 0.098 0.819 0.845 0.610 0.640 0.170 0.216 0.215 BSC 0.780 0.800 0.177 0.140 0.144 0.212 0.244 0.242 BSC 0.039 0.055 0.065 0.094 0.102 0.135 0.015 0.035 0.515 0.020 0.053 0.530 0.29 4.70 5.30 2.21 2.59 1.50 2.49 20.79 21.45 15.48 16.24 4.31 5.48 5.46 BSC 19.80 20.30 4.49 3.55 3.65 5.38 6.19 6.14 BSC 0.99 1.40 1.65 2.39 2.59 3.43 0.38 0.89 13.07 0.51 1.35 13.45 7.39 Data according to IEC 60747and per diode unless otherwise specified 20100216a DPF 60 IM 400 HB final 30 1.8 120 1.6 100 1.2 80 IF IF = 120 A 60 A 30 A 20 1.0 Qrr 60 25 IF = 120 A 60 A 30 A 1.4 IRM 15 0.8 TVJ = 150°C [A] 40 [A] 10 [µC] 0.6 TVJ = 125°C VR = 270 V 0.4 20 25°C 0.2 0.0 0.0 0.4 0.8 1.2 VF [V] 1.6 0 0 2.0 TVJ = 125°C VR = 270 V 5 200 400 600 0 1.4 1800 TVJ = 125°C VR = 270 V 110 tfr 1600 1.2 1400 100 1.0 90 IF = 120 A 60 A 30 A IRM 80 Qrr 70 0.4 0.0 40 80 120 160 TVJ [°C] Fig. 4 Dynamic parameters Qrr, IRM versus T VJ VFR 1000 [ns] 800 8 600 6 [V] 200 0 200 400 -diF /dt [A/µs] 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt 80 10 400 60 0 12 VFR 1200 [ns] 0.2 TVJ = 125°C VR = 270 V IF = 60 A tfr trr Kf 0.8 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt 120 1.6 400 -diF /dt [A/µs] Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 0.6 200 -diF /dt [A/µs] 0 200 400 -diF /dt [A/µs] 4 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 0.6 70 0.5 60 IF = 120 A 50 Erec 0.4 60 A 30 A 40 ZthJC 0.3 [K/W] [µJ] 30 0.2 20 0.1 TVJ = 125°C VR = 270 V 10 0 0 200 400 -diF /dt [A/µs] 600 0.0 10 0 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 10 1 10 2 t [ms] 10 3 10 4 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100216a