Ordering number : ENN6559
5LN01SP
5LN01SP
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
unit : mm
2180
[5LN01SP]
2.2
3.0
4.0
15.0
0.6
1.8
0.4
0.5
0.4
0.4
3
0.7
Specifications
Parameter
Gate-to-Source Voltage
Drain Current (DC)
1 : Source
2 : Drain
3 : Gate
3.0
3.8nom
Absolute Maximum Ratings at Ta=25°C
Drain-to-Source Voltage
1.3
0.7
1 2
1.3
Symbol
SANYO : SPA
Conditions
Ratings
Unit
VDSS
VGSS
50
V
±10
V
ID
0.1
A
0.4
A
Drain Current (Pulse)
IDP
PW≤10µs, duty cycle≤1%
Allowable Power Dissipation
PD
Tch
0.25
W
Channel Temperature
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
V(BR)DSS
IDSS
typ
50
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=50V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
0.4
yfs
VDS=10V, ID=50mA
0.13
Marking : YB
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Ratings
min
max
Unit
V
10
µA
±10
µA
1.3
0.18
V
S
Continued on next page.
www.onsemi.com
Rev.0 I Page
1 of 4 I www.onsemi.com
Publication Order Number:
5LN01SP/D
5LN01SP
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=50mA, VGS=4V
ID=30mA, VGS=2.5V
Input Capacitance
RDS(on)3
Ciss
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Ratings
Conditions
min
typ
Unit
max
6
7.8
Ω
7.1
9.9
Ω
10
20
Ω
6.6
pF
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
4.7
pF
1.7
pF
18
ns
See specified Test Circuit
42
ns
See specified Test Circuit
190
ns
See specified Test Circuit
105
ns
VDS=10V, VGS=10V, ID=100mA
VDS=10V, VGS=10V, ID=100mA
1.57
nC
0.20
nC
VDS=10V, VGS=10V, ID=100mA
IS=100mA, VGS=0
0.32
nC
0.85
1.2
V
Switching Time Test Circuit
4V
0V
VDD=25V
VIN
ID=50mA
RL=500Ω
VIN
PW=10µs
D.C.≤1%
D
VOUT
G
5LN01SP
50Ω
ID -- VDS
6.0
V
VGS=1.5V
0.05
0.04
0.03
0.12
0.10
0.08
0.06
0.04
0.01
0.02
0
0
0.2
0.4
0.6
0.8
Drain-to-Source Voltage, VDS -- V
1.0
0
0.5
1.0
1.5
2.0
Gate-to-Source Voltage, VGS -- V
IT00054
RDS(on) -- VGS
12
10
9
50mA
8
ID=30mA
7
6
5
4
3.0
IT00055
VGS=4V
7
11
2.5
RDS(on) -- ID
100
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
0.14
0.02
0
25°
C
0.16
0.07
0.06
25°C
0.18
Ta=
--
4.0V
0.08
VDS=10V
5V
V
2.0
2.
Drain Current, ID -- A
3.0
3.5V
0.09
ID -- VGS
0.20
V
0.10
Drain Current, ID -- A
S
75°
C
P.G
5
3
2
10
Ta=75°C
25°C
--25°C
7
5
3
2
3
2
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
9
10
1.0
0.01
IT00056
Rev.0 I Page 2 of 4 I www.onsemi.com
2
3
5
7
0.1
Drain Current, ID -- A
2
3
IT00057
5LN01SP
RDS(on) -- ID
100
5
3
2
Ta=75°C
10
7
5
--25°C
25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
=3
ID
50
I D=
6
m
VG
A,
4.
S=
0V
4
2
0
--60
--40
--20
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
7
2
10
Ciss
Coss
3
2
Crss
5
10
15
20
25
30
2
0.01
3
IT00059
VDS=10V
5
3
5°C
2
Ta= --
2
25°C
75°C
0.1
7
5
3
2
2
3
5
7
2
0.1
3
IT00061
SW Time -- ID
VDD=25V
VGS=4V
5
3
td(off)
2
tf
100
7
tr
5
3
td(on)
2
2
3
5
7
10
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
8
7
6
5
4
3
2
1
1.0
0
7
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
3
5
7
9
5
5
3
yfs -- ID
IT00062
f=1MHz
7
2
10
0.01
1.1
Ciss, Coss, Crss -- VDS
100
2
7
Switching Time, SW Time -- ns
--25
°C
5°C
25°
C
Ta=
7
Forward Current, IF -- A
2
0.01
0.5
3
1000
0.1
3
25°C
Drain Current, ID -- A
2
5
--25°C
5
IT00060
VGS=0
7
7
0.01
0.01
160
IF -- VSD
3
Ta=75°C
10
Drain Current, ID -- A
Forward Transfer Admittance, yfs -- S
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
=2
V GS
0
8
2
1.0
.5V
,
mA
3
IT00058
12
10
5
1.0
0.001
3
RDS(on) -- Ta
14
VGS=1.5V
7
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
7
RDS(on) -- ID
100
VGS=2.5V
35
40
Drain-to-Source Voltage, VDS -- V
45
50
0
0
IT00064
Rev.0 I Page 3 of 4 I www.onsemi.com
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
1.8
IT00065
5LN01SP
PD -- Ta
Allowable Power Dissipation, PD -- W
0.3
0.25
0.2
0.15
0.1
0.05
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
160
IT02005
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5LN01SP/D