Ordering number : EN6619C 5LP01C P-Channel Small Signal MOSFET http://onsemi.com –50V, –0.07A, 23Ω, Single CP Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) --50 V ±10 V --0.07 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.28 A 0.25 W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7013A-013 1.1 memo 5LP01C-TB-E CP SC-59, TO-236, SOT-23, TO-236AB 3,000 pcs./reel Pb-Free 5LP01C-TB-H CP SC-59, TO-236, SOT-23, TO-236AB 3,000 pcs./reel Pb-Free and Halogen Free 1.5 5LP01C-TB-E 5LP01C-TB-H Shipping 1 0.95 2 Packing Type: TB Marking 0.4 1 : Gate 2 : Source 3 : Drain CP XB LOT No. 0.05 0.1 3 Package LOT No. 0.3 0.5 2.5 0.5 2.9 Device TB Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 72413 TKIM TC-00002969/62712 TKIM/33006PE MSIM TB-00002201/92500 TS IM TA-2036 No.6619-1/6 5LP01C Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS= --10V, ID= --100μA VDS= --10V, ID= --40mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --40mA, VGS= --4V ID= --20mA, VGS= --2.5V ID= --5mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID= --1mA, VGS=0V VDS= --50V, VGS=0V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --70mA Ratings min typ max --50 V --0.4 70 --1 μA ±10 μA --1.4 100 V mS 18 23 Ω 20 28 Ω 30 60 Ω 7.4 pF 4.2 pF 1.3 pF 20 ns 35 ns 160 ns 150 ns 1.40 nC 0.16 nC 0.23 IS= --70mA, VGS=0V Unit --0.85 nC --1.2 V Switching Time Test Circuit VDD= --25V VIN 0V --4V ID= --40mA RL=625Ω D VIN VOUT PW=10μs D.C.≤1% G 5LP01C P.G 50Ω S No.6619-2/6 5LP01C --0.04 --0.03 VGS= --1.5V --0.02 --0.01 25°C --0.10 C Drain Current, ID -- A --0.05 Ta= -- --0.12 --2.0V VDS= --10V --0.08 75° .5V --3 .0 V --6 .0V 5V . --2 --3 Drain Current, ID -- A --4 . 0V --0.06 ID -- VGS --0.14 25°C ID -- VDS --0.07 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 0 --2.0 RDS(on) -- VGS 40 --0.5 --1.0 --1.5 --2.0 --2.5 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 30 25 ID= --40mA 20 15 10 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V 3 Ta=75°C 2 25°C --25°C 2 3 5 7 --0.1 Drain Current, ID -- A IT00092 3 2 100 7 25°C Ta=75°C 3 2 --25°C 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A m -20 ,V =ID mA -40 = ID 20 0V -4. =S G 15 --40 --20 0 20 40 60 80 --25°C 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 160 IT00096 5 7 --0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S 5V V A, 3 Ta=75°C 25°C 2 3 IT00095 | yfs | -- ID 1.0 30 25 5 IT00094 35 -2. =S G 7 10 --0.001 3 RDS(on) -- Ta 40 3 IT00093 VGS= --1.5V 5 5 2 RDS(on) -- ID VGS= --2.5V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 100 7 10 --60 7 10 --0.01 --10 RDS(on) -- ID 1000 Static Drain to Source On-State Resistance, RDS(on) -- Ω --9 --4.0 IT00091 VGS= --4V 35 0 --3.5 RDS(on) -- ID 100 Ta=25°C --20mA --3.0 Gate to Source Voltage, VGS -- V IT00090 VDS= --10V 7 5 3 2 5°C Ta= --2 0.1 7 5 75°C 25°C 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00097 No.6619-3/6 5LP01C IS -- VSD 3 SW Time -- ID 1000 VGS=0V VDD= --25V VGS = --4V 7 Switching Time, SW Time -- ns --0.1 7 5 --0.01 --0.5 --0.6 --25°C 2 25°C 3 Ta=7 5°C --0.7 --0.8 --0.9 --1.0 --1.1 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 Ciss Coss 3 2 Crss 1.0 7 5 3 3 5 7 Drain Current, ID -- A --0.1 IT00099 VGS -- Qg VDS= --10V ID= --70mA --9 10 7 5 2 --10 2 Ciss, Coss, Crss -- pF 2 f=1MHz 3 --8 --7 --6 --5 --4 --3 --2 --1 2 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain to Source Voltage, VDS -- V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00101 PD -- Ta 0.30 Allowable Power Dissipation, PD -- W tf 3 IT00098 Ciss, Coss, Crss -- VDS 100 7 5 5 10 --0.01 --1.2 Gate to Source Voltage, VGS -- V Source Current, IS -- A 2 0.25 0.20 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02382 No.6619-4/6 5LP01C Outline Drawing 5LP01C-TB-E, 5LP01C-TB-H Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.6619-5/6 5LP01C Note on usage : Since the 5LP01C is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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