5LP01M-TL-H - ON Semiconductor

Ordering number : EN6135C
5LP01M
P-Channel Small Signal MOSFET
http://onsemi.com
–50V, –0.07A, 23Ω, Single MCP
Features
•
•
•
•
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
Unit
--50
V
±10
V
--0.07
A
Allowable Power Dissipation
ID
IDP
PD
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
--0.28
A
0.15
W
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Ordering & Package Information
Package Dimensions
0.15
3
1.25
0 to 0.08
1
5LP01M-TL-E
5LP01M-TL-H
Device
Package
Shipping
memo
5LP01M-TL-E
MCP
SC-70, SOT-323
3,000
pcs./reel
Pb-Free
5LP01M-TL-H
MCP
SC-70, SOT-323
3,000
pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL
0.9
Marking
2
0.65
LOT No.
0.3
XB
LOT No.
TL
0.3
0.425
2.1
0.425
2.0
0.2
unit : mm (typ)
7023A-010
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
MCP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
72413 TKIM TC-00002970/71112 TKIM/42006PE MSIM TB-00002113/31000 TS (KOTO) TA-2040 No.6135-1/6
5LP01M
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
Conditions
V(BR)DSS
IDSS
IGSS
VGS=±8V, VDS=0V
Forward Transfer Admittance
VGS(off)
| yfs |
VDS= --10V, ID= --100μA
VDS= --10V, ID= --40mA
Static Drain to Source On-State Resistance
RDS(on)1
RDS(on)2
ID= --40mA, VGS= --4V
ID= --20mA, VGS= --2.5V
ID= --5mA, VGS= --1.5V
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
RDS(on)3
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
ID= --1mA, VGS=0V
VDS= --50V, VGS=0V
VDS= --10V, f=1MHz
See specified Test Circuit.
VDS= --10V, VGS= --10V, ID= --70mA
Ratings
min
typ
max
--50
V
--0.4
70
--1
μA
±10
μA
--1.4
100
V
mS
18
23
Ω
20
28
Ω
30
60
Ω
7.4
pF
4.2
pF
1.3
pF
20
ns
35
ns
160
ns
150
ns
1.40
nC
0.16
nC
0.23
IS= --70mA, VGS=0V
Unit
--0.85
nC
--1.2
V
Switching Time Test Circuit
0V
--4V
VDD= --25V
VIN
VIN
PW=10μs
D.C.≤1%
D
ID= --40mA
RL=625Ω
VOUT
G
5LP01M
P.G
50Ω
S
No.6135-2/6
5LP01M
0V
.
--2
--0.04
--0.03
VGS= --1.5V
--0.02
--0.01
Ta=
--
--0.10
75°
C
Drain Current, ID -- A
.5V
--0.12
--3
Drain Current, ID -- A
--0.05
VDS= --10V
25°C
0V
--6
.0V
5V
.
--2
--4
.
--0.06
ID -- VGS
--0.14
25°C
ID -- VDS
--0.07
--0.08
--0.06
--0.04
--0.02
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
Drain to Source Voltage, VDS -- V
--1.8
0
--2.0
RDS(on) -- VGS
40
--0.5
--1.0
--1.5
--2.0
--2.5
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
30
25
ID= --40mA
20
15
10
--1
--2
--3
--4
--5
--6
--7
--8
Gate to Source Voltage, VGS -- V
2
25°C
--25°C
2
3
5
7
--0.1
Drain Current, ID -- A
IT00092
2
Ta=75°C
7
25°C
5
--25°C
3
2
10
--0.01
2
3
5
7
2
--0.1
Drain Current, ID -- A
.0V
,V
--4
mA
=
0
S
-2
VG
=A,
ID
m
-40
=ID
15
--20
0
20
40
60
80
--25°C
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
160
IT00096
5
7
--0.01
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
5V
-2.
=S
G
--40
25°C
3
| yfs | -- ID
5
30
20
Ta=75°C
IT00094
35
25
5
10
--0.001
3
RDS(on) -- Ta
40
3
IT00093
VGS= --1.5V
3
100
2
RDS(on) -- ID
VGS= --2.5V
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
Ta=75°C
7
5
10
--60
3
10
--0.01
--10
RDS(on) -- ID
7
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
--9
--4.0
IT00091
VGS= --4V
35
0
--3.5
RDS(on) -- ID
5
Ta=25°C
--20mA
--3.0
Gate to Source Voltage, VGS -- V
IT00090
2
3
IT00095
VDS= --10V
3
2
5°C
2
Ta= --
0.1
25°C
75°C
7
5
3
2
0.01
--0.01
2
3
5
7
--0.1
Drain Current, ID -- A
2
3
IT00097
No.6135-3/6
5LP01M
IS -- VSD
3
Switching Time, SW Time -- ns
7
5
Ta=7
5°
--0.01
--0.5
--0.6
--25°C
C
3
25°C
--0.7
--0.8
--0.9
--1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
2
td(off)
100
7
5
tr
3
td(on)
2
7
5
Coss
3
2
Crss
1.0
7
5
3
2
5
7
--0.1
IT00099
VDS= --10V
ID= --70mA
--9
Ciss
3
VGS -- Qg
--10
3
2
10
2
Drain Current, ID -- A
f=1MHz
7
5
--8
--7
--6
--5
--4
--3
--2
--1
0
0.1
0
--5
--10
--15
--20
--25
--30
--35
--40
Drain to Source Voltage, VDS -- V
--45
--50
IT00100
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
IT00101
PD -- Ta
0.20
Allowable Power Dissipation, PD -- W
tf
3
IT00098
Ciss, Coss, Crss -- VDS
100
5
10
--0.01
--1.2
--1.1
Gate to Source Voltage, VGS -- V
Source Current, IS -- A
--0.1
VDD= --25V
VGS = --4V
7
2
2
SW Time -- ID
1000
VGS=0V
0.15
0.10
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT00102
No.6135-4/6
5LP01M
Outline Drawing
5LP01M-TL-E, 5LP01M-TL-H
Land Pattern Example
Mass (g) Unit
0.006 mm
* For reference
Unit: mm
2.1
1.0
0.7
0.65 0.65
No.6135-5/6
5LP01M
Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6135-6/6