Ordering number : EN6135C 5LP01M P-Channel Small Signal MOSFET http://onsemi.com –50V, –0.07A, 23Ω, Single MCP Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) Unit --50 V ±10 V --0.07 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.28 A 0.15 W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions 0.15 3 1.25 0 to 0.08 1 5LP01M-TL-E 5LP01M-TL-H Device Package Shipping memo 5LP01M-TL-E MCP SC-70, SOT-323 3,000 pcs./reel Pb-Free 5LP01M-TL-H MCP SC-70, SOT-323 3,000 pcs./reel Pb-Free and Halogen Free Packing Type: TL 0.9 Marking 2 0.65 LOT No. 0.3 XB LOT No. TL 0.3 0.425 2.1 0.425 2.0 0.2 unit : mm (typ) 7023A-010 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 MCP 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 72413 TKIM TC-00002970/71112 TKIM/42006PE MSIM TB-00002113/31000 TS (KOTO) TA-2040 No.6135-1/6 5LP01M Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS= --10V, ID= --100μA VDS= --10V, ID= --40mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --40mA, VGS= --4V ID= --20mA, VGS= --2.5V ID= --5mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID= --1mA, VGS=0V VDS= --50V, VGS=0V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --70mA Ratings min typ max --50 V --0.4 70 --1 μA ±10 μA --1.4 100 V mS 18 23 Ω 20 28 Ω 30 60 Ω 7.4 pF 4.2 pF 1.3 pF 20 ns 35 ns 160 ns 150 ns 1.40 nC 0.16 nC 0.23 IS= --70mA, VGS=0V Unit --0.85 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --25V VIN VIN PW=10μs D.C.≤1% D ID= --40mA RL=625Ω VOUT G 5LP01M P.G 50Ω S No.6135-2/6 5LP01M 0V . --2 --0.04 --0.03 VGS= --1.5V --0.02 --0.01 Ta= -- --0.10 75° C Drain Current, ID -- A .5V --0.12 --3 Drain Current, ID -- A --0.05 VDS= --10V 25°C 0V --6 .0V 5V . --2 --4 . --0.06 ID -- VGS --0.14 25°C ID -- VDS --0.07 --0.08 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 0 --2.0 RDS(on) -- VGS 40 --0.5 --1.0 --1.5 --2.0 --2.5 Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω 30 25 ID= --40mA 20 15 10 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V 2 25°C --25°C 2 3 5 7 --0.1 Drain Current, ID -- A IT00092 2 Ta=75°C 7 25°C 5 --25°C 3 2 10 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A .0V ,V --4 mA = 0 S -2 VG =A, ID m -40 =ID 15 --20 0 20 40 60 80 --25°C 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 160 IT00096 5 7 --0.01 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S 5V -2. =S G --40 25°C 3 | yfs | -- ID 5 30 20 Ta=75°C IT00094 35 25 5 10 --0.001 3 RDS(on) -- Ta 40 3 IT00093 VGS= --1.5V 3 100 2 RDS(on) -- ID VGS= --2.5V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 7 5 10 --60 3 10 --0.01 --10 RDS(on) -- ID 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω --9 --4.0 IT00091 VGS= --4V 35 0 --3.5 RDS(on) -- ID 5 Ta=25°C --20mA --3.0 Gate to Source Voltage, VGS -- V IT00090 2 3 IT00095 VDS= --10V 3 2 5°C 2 Ta= -- 0.1 25°C 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00097 No.6135-3/6 5LP01M IS -- VSD 3 Switching Time, SW Time -- ns 7 5 Ta=7 5° --0.01 --0.5 --0.6 --25°C C 3 25°C --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 2 td(off) 100 7 5 tr 3 td(on) 2 7 5 Coss 3 2 Crss 1.0 7 5 3 2 5 7 --0.1 IT00099 VDS= --10V ID= --70mA --9 Ciss 3 VGS -- Qg --10 3 2 10 2 Drain Current, ID -- A f=1MHz 7 5 --8 --7 --6 --5 --4 --3 --2 --1 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain to Source Voltage, VDS -- V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00101 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W tf 3 IT00098 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.2 --1.1 Gate to Source Voltage, VGS -- V Source Current, IS -- A --0.1 VDD= --25V VGS = --4V 7 2 2 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00102 No.6135-4/6 5LP01M Outline Drawing 5LP01M-TL-E, 5LP01M-TL-H Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.6135-5/6 5LP01M Note on usage : Since the 5LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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