Ordering number : EN6622C 5LP01SS P-Channel Small Signal MOSFET http://onsemi.com –50V, –0.07A, 23Ω, Single SSFP Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings Unit VDSS VGSS Gate to Source Voltage Drain Current (DC) --50 V ±10 V --0.07 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.28 A 0.15 W This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions unit : mm (typ) 7029A-003 5LP01SS-TL-E 5LP01SS-TL-H 1.4 0.1 3 0.8 0 to 0.02 0.3 1.4 0.3 0.25 1 2 Package Shipping memo 5LP01SS-TL-E SSFP SC-81 8,000 pcs./reel Pb-Free 5LP01SS-TL-H SSFP SC-81 8,000 pcs./reel Pb-Free and Halogen Free Packing Type: TL 0.07 0.6 0.2 TL 1 2 3 1 : Gate 2 : Source 3 : Drain XB LOT No. 0.07 Marking LOT No. 0.45 Device Electrical Connection 3 SSFP 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 72413 TKIM TC-00002971/O0312 TKIM/71206/42006PE MSIM TB-00002118/91400 TSIM TA-2042 No.6622-1/6 5LP01SS Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS= --10V, ID= --100μA VDS= --10V, ID= --40mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --40mA, VGS= --4V ID= --20mA, VGS= --2.5V ID= --5mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Qg Gate to Source Charge Qgs Qgd Diode Forward Voltage VSD min ID= --1mA, VGS=0V VDS= --50V, VGS=0V typ Unit max --50 V --0.4 --1 μA ±10 μA --1.4 70 V 100 VDS= --10V, f=1MHz td(off) tf Gate to Drain “Miller” Charge Ratings Conditions See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --70mA mS 18 23 Ω 20 28 Ω 30 60 Ω 7.4 pF 4.2 pF 1.3 pF 20 ns 35 ns 160 ns 150 ns 1.40 nC 0.16 nC 0.23 IS= --70mA, VGS=0V nC --0.85 --1.2 V Switching Time Test Circuit VDD= --25V VIN 0V --4V ID= --40mA RL=625Ω D VIN VOUT PW=10μs D.C.≤1% G 5LP01SS P.G 50Ω S ID -- VDS 5°C VDS= --10V --0.03 VGS= --1.5V --0.01 25°C C --0.10 --0.08 75° .0 V --0.04 --0.02 Ta= --2 --0.12 --2.0V Drain Current, ID -- A --0.05 5V . --2 --3 .5V Drain Current, ID -- A --4 . 0V --0.06 ID -- VGS --0.14 --3 --6 .0 V --0.07 --0.06 --0.04 --0.02 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 --2.0 IT00090 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate to Source Voltage, VGS -- V --3.5 --4.0 IT00091 No.6622-2/6 5LP01SS RDS(on) -- VGS 40 RDS(on) -- ID 100 VGS= --4V Static Drain to Source On-State Resistance, RDS(on) -- Ω Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=25°C 35 30 25 --20mA ID= --40mA 20 15 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- Ω 25°C --25°C 2 3 5 7 2 100 7 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --0.1 Drain Current, ID -- A RDS(on) -- ID m -20 ,V =ID mA 0 -4 =ID 20 0V -4. =S G 15 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 2 2 3 5 7 VDS= --10V 5 3 2 5°C Ta= --2 0.1 7 5 75°C 25°C 3 2 2 3 5 7 VDD= --25V VGS = --4V 7 --0.01 --0.5 --0.6 --0.7 Switching Time, SW Time -- ns --25°C 2 25°C 3 Ta=7 5°C Source Current, IS -- A 2 5 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V --1.1 --1.2 IT00098 3 IT00097 SW Time -- ID 1000 7 2 --0.1 Drain Current, ID -- A VGS=0V 3 IT00095 ⎪yfs⎪ -- ID IT00096 --0.1 2 --0.01 7 0.01 --0.01 160 IS -- VSD 3 --25°C Drain Current, ID -- A Forward Transfer Admittance, ⎪yfs⎪ -- S 5V V A, 3 Ta=75°C 25°C 1.0 30 25 5 IT00094 35 -2. =S G 7 10 --0.001 3 RDS(on) -- Ta 40 3 IT00093 VGS= --1.5V 3 5 2 --0.1 Drain Current, ID -- A 100 5 10 --0.01 Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=75°C 2 VGS= --2.5V 7 10 --60 3 IT00092 RDS(on) -- ID 1000 5 10 --0.01 --10 Static Drain to Source On-State Resistance, RDS(on) -- Ω 0 7 5 tf 3 2 td(off) 100 7 5 tr 3 td(on) 2 10 --0.01 2 3 5 Drain Current, ID -- A 7 --0.1 IT00099 No.6622-3/6 5LP01SS Ciss, Coss, Crss -- VDS 100 7 5 Gate-to-Source Voltage, VGS -- V Ciss, Coss, Crss -- pF VDS= --10V ID= --70mA --9 3 2 10 7 5 Ciss Coss 3 2 Crss 1.0 7 5 3 --8 --7 --6 --5 --4 --3 --2 --1 2 0 0.1 0 --5 --10 --15 --20 --25 --30 --35 --40 Drain-to-Source Voltage, VDS -- V --45 --50 IT00100 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00101 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W VGS -- Qg --10 f=1MHz 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6622-4/6 5LP01SS Outline Drawing 5LP01SS-TL-E, 5LP01SS-TL-H Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.6622-5/6 5LP01SS Note on usage : Since the 5LP01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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