NPN 2N2102 MEDIUM POWER AMPLIFIER & SWITCH The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. They are intended for a wide variety of small-signall and medium power applications in military and industrial equipments. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO VCBO VCER VEBO IC Collector-Emitter Voltage (IB = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (RBE = 10 Ω) Emitter-Base Voltage Collector Current PD Total Power Dissipation TJ TStg Junction Temperature Storage Temperature range Tamb= 25°C Tcase= 25°C Value Unit 65 120 80 7 1 1 5 V V V V A W -65 to 200 °C Value Unit 35 175 °C/ W THERMAL CHARACTERISTICS Symbol RthJ-c Rthj-a Ratings Thermal Resistance, Junction-case thermal resistance from junction to ambient in free air COMSET SEMICONDUCTORS 1/3 NPN 2N2102 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) ICBO Collector Cutoff Current IEBO Emitter Cutoff Current Collector Base Sustaining Voltage Collector Emitter Sustaining Voltage (*) VCBO VCEO hFE VCE(SAT) VBE(SAT) DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) CC Collector Capacitance Ce emitter Capacitance Min Typ Max Unit - - 2 2 5 nA µA nA IC= 100 µA, IE= 0 120 - - V IC= 30 mA, IB= 0 65 - - V IC= 10 µA, VCE= 10 V IC= 0.1 mA, VCE= 10 V IC= 10 mA, VCE= 10 V IC= 150 mA, VCE= 10 V IC= 500 mA, VCE= 10 V IC= 1 A, VCE= 10 V 10 20 35 40 25 10 - 120 - IC= 150 mA, IB= 15 mA - - 0.5 V IC= 150 mA, IB= 15 mA - - 1.1 V - - 15 pF - - 80 pF VCB= 60 V IE= 0 VEB= 5 V, IC= 0 Tamb= 25°C Tamb= 150°C IE= 0 ,VCB= 10 V f = 1MHz IC= 0 ,VEB= 0.5 V f = 1MHz - (*) Pulse conditions : tp < 300 µs, δ =2%. 2|3 24/09/2012 COMSET SEMICONDUCTORS NPN 2N2102 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com [email protected] 3|3 24/09/2012 COMSET SEMICONDUCTORS