PNP 2N3636 – 2N3637 SILICON PLANAR RF TRANSISTORS The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case. They are intended for high voltage switching and Low Power Amplifier. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage (Ib = 0) -175 V VCBO Collector-Base Voltage (Ie = 0) -175 V VEBO Emitter-Base Voltage (Ic = 0) -5 V IC Collector Current -1 A PD Tamb = 25°C 1 Tcase = 25°C 5 W Total Power Dissipation 200 °C Storage Temperature Range -65 to +200 °C Operating Ambient Temperature -65 to +150 °C TJ Junction Temperature TStg Tamb ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Max Unit ICBO Collector Cutoff Current VCB = -100 V, IE =0 - - -100 nA IEBO Emitter Cutoff Current VEB = -3 V, IC =0 - - -50 nA IC = -10 mA, IB =0 -175 - - V IC = -100 µA, IE =0 -175 - - V IE = -10 mA, IC =0 -5 - - V VCEO VCBO VEBO Collector Emitter Breakdown Voltage (*) Collector Base Breakdown Voltage Emitter Base Breakdown Voltage 21/09/2012 COMSET SEMICONDUCTORS 1/3 PNP 2N3636 – 2N3637 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol hFE VCE(SAT) VBE(SAT) Ratings DC Current Gain (*) Collector-Emitter saturation Voltage (*) Base-Emitter saturation Voltage (*) fT Transition frequency Cob Cib Output Capacitance Input Capacitance Test Condition(s) Min Typ Max 2N3636 IC = -0.1 mA VCE = -10 V 2N3637 2N3636 IC = -1 mA VCE = -10 V 2N3637 2N3636 IC = -10 mA VCE = -10 V 2N3637 2N3636 IC = -50 mA VCE = -10 V 2N3637 2N3636 IC = -150 mA VCE = -10 V 2N3637 IC = -10 mA, IB = -1 mA IC = -50 mA, IB = -5 mA IC = -10 mA, IB = -1 mA IC = -50 mA, IB = -5 mA IC = -30 mA, VCE = -30 V 2N3636 f = 100 MHz 2N3637 IE = 0, VCB = -20 V, f = 100 kHz IC = 0, VEB = -1 V, f = 100 kHz 40 80 45 90 50 100 50 100 25 50 150 200 - - 150 300 0.3 0.5 0.8 0.9 10 75 Unit - V V MHz pF PF SWITCHING TIMES Symbol ton toff Ratings Turn-on time Turn-off time IC = -50 mA, IB1 = -IB2 = -5 mA VCC = 100 V, CBE = 4 V Value Unit 400 600 ns (*) Pulse conditions : tp < 300 µs, δ =1.5% 21/09/2012 COMSET SEMICONDUCTORS 2/3 PNP 2N3636 – 2N3637 MECHANICAL DATA CASE TO-39 DIMENSIONS (mm) min max A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53 E - 0.88 F 2.41 2.66 G 4.82 5.33 H 0.71 0.86 J 0.73 1.02 K 12.70 - L 42° 48° Pin 1 : Emitter Pin 2 : Base Pin 3 : Collector Case : Collector Revised August 2012 Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical components in life support devices or systems. www.comsetsemi.com 21/09/2012 [email protected] COMSET SEMICONDUCTORS 3/3