COMSET 2N3636

PNP 2N3636 – 2N3637
SILICON PLANAR RF TRANSISTORS
The 2N3636 and 2N3637 are PNP transistors mounted in TO-39 metal case.
They are intended for high voltage switching and Low Power Amplifier.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Value
Unit
VCEO
Collector-Emitter Voltage (Ib = 0)
-175
V
VCBO
Collector-Base Voltage (Ie = 0)
-175
V
VEBO
Emitter-Base Voltage (Ic = 0)
-5
V
IC
Collector Current
-1
A
PD
Tamb = 25°C
1
Tcase = 25°C
5
W
Total Power Dissipation
200
°C
Storage Temperature Range
-65 to +200
°C
Operating Ambient Temperature
-65 to +150
°C
TJ
Junction Temperature
TStg
Tamb
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min
Typ
Max
Unit
ICBO
Collector Cutoff
Current
VCB = -100 V, IE =0
-
-
-100
nA
IEBO
Emitter Cutoff Current
VEB = -3 V, IC =0
-
-
-50
nA
IC = -10 mA, IB =0
-175
-
-
V
IC = -100 µA, IE =0
-175
-
-
V
IE = -10 mA, IC =0
-5
-
-
V
VCEO
VCBO
VEBO
Collector Emitter
Breakdown Voltage (*)
Collector Base
Breakdown Voltage
Emitter Base
Breakdown Voltage
21/09/2012
COMSET SEMICONDUCTORS
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PNP 2N3636 – 2N3637
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
hFE
VCE(SAT)
VBE(SAT)
Ratings
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter
saturation Voltage (*)
fT
Transition frequency
Cob
Cib
Output Capacitance
Input Capacitance
Test Condition(s)
Min
Typ
Max
2N3636
IC = -0.1 mA
VCE = -10 V
2N3637
2N3636
IC = -1 mA
VCE = -10 V
2N3637
2N3636
IC = -10 mA
VCE = -10 V
2N3637
2N3636
IC = -50 mA
VCE = -10 V
2N3637
2N3636
IC = -150 mA
VCE = -10 V
2N3637
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
IC = -10 mA, IB = -1 mA
IC = -50 mA, IB = -5 mA
IC = -30 mA, VCE = -30 V 2N3636
f = 100 MHz
2N3637
IE = 0, VCB = -20 V, f = 100 kHz
IC = 0, VEB = -1 V, f = 100 kHz
40
80
45
90
50
100
50
100
25
50
150
200
-
-
150
300
0.3
0.5
0.8
0.9
10
75
Unit
-
V
V
MHz
pF
PF
SWITCHING TIMES
Symbol
ton
toff
Ratings
Turn-on time
Turn-off time
IC = -50 mA, IB1 = -IB2 = -5 mA
VCC = 100 V, CBE = 4 V
Value
Unit
400
600
ns
(*) Pulse conditions : tp < 300 µs, δ =1.5%
21/09/2012
COMSET SEMICONDUCTORS
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PNP 2N3636 – 2N3637
MECHANICAL DATA CASE TO-39
DIMENSIONS (mm)
min
max
A
8.50
9.39
B
7.74
8.50
C
6.09
6.60
D
0.40
0.53
E
-
0.88
F
2.41
2.66
G
4.82
5.33
H
0.71
0.86
J
0.73
1.02
K
12.70
-
L
42°
48°
Pin 1 :
Emitter
Pin 2 :
Base
Pin 3 :
Collector
Case :
Collector
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
www.comsetsemi.com
21/09/2012
[email protected]
COMSET SEMICONDUCTORS
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