MOSFET SMD Type Product specification 2SK1399 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 impedance 0.55 Not necessary to consider driving current because of it is high input +0.1 1.3-0.1 +0.1 2.4-0.1 Can be driven by a 3.0-V power source 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Possible to reduce the number of parts by omitting the bias resistor 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 50 V Gate to source voltage VGSS 7.0 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle mW 5% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=50V,VGS=0 Gate leakage current IGSS VGS= 7.0V,VDS=0 Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance VGS(off) VDS=3.0V,ID=1 A Yfs RDS(on) Input capacitance Ciss Output capacitance Coss VDS=3.0V,ID=10mA Min Typ Max 10 5.0 0.9 1.2 20 38 1.5 A A V ms VGS=2.5V,ID=10mA 22 40 VGS=4.0V,ID=10mA 14 20 VDS=3.0V,VGS=0,f=1MHZ Unit 8 pF 7 pF Reverse transfer capacitance Crss 3 pF Turn-on delay time td(on) 15 ns 100 ns 30 ns 35 ns Rise time tr Turn-off delay time td(off) Fall time ID=20mA,VGS(on)=3V,RL=150 ,VDD=3.0V,RG=10 tf Marking Marking G12 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1