TYSEMI 2SK1399

MOSFET
SMD Type
Product specification
2SK1399
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
1
impedance
0.55
Not necessary to consider driving current because of it is high input
+0.1
1.3-0.1
+0.1
2.4-0.1
Can be driven by a 3.0-V power source
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
+0.05
0.1-0.01
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
Possible to reduce the number of parts by omitting the bias resistor
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
50
V
Gate to source voltage
VGSS
7.0
V
Drain current (DC)
ID
100
mA
Drain current(pulse) *
ID
200
mA
Power dissipation
PD
200
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms, duty cycle
mW
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=50V,VGS=0
Gate leakage current
IGSS
VGS= 7.0V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
VGS(off) VDS=3.0V,ID=1 A
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
VDS=3.0V,ID=10mA
Min
Typ
Max
10
5.0
0.9
1.2
20
38
1.5
A
A
V
ms
VGS=2.5V,ID=10mA
22
40
VGS=4.0V,ID=10mA
14
20
VDS=3.0V,VGS=0,f=1MHZ
Unit
8
pF
7
pF
Reverse transfer capacitance
Crss
3
pF
Turn-on delay time
td(on)
15
ns
100
ns
30
ns
35
ns
Rise time
tr
Turn-off delay time
td(off)
Fall time
ID=20mA,VGS(on)=3V,RL=150
,VDD=3.0V,RG=10
tf
Marking
Marking
G12
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4008-318-123
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