MOSFET SMD Type MOS Field Effect Transistor 2SK1581 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 Possible to reduce the number of parts by omitting the bias resistor 0.55 +0.1 1.3-0.1 Not necessry to consider driving current because of its thgh input impedance. +0.1 2.4-0.1 Can be driven by Ics having a 3V single power supply. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 16 V Gate to source voltage VGSS 16 V Drain current (DC) ID 200 mA Drain current(pulse) * ID 400 mA Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle mW 5% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=16V,VGS=0 IGSS VGS= 3V,VDS=0 Min Typ 10 10 VGS(off) VDS=3.0V,ID=10 A 0.9 1.2 VDS=3.0V,ID=10mA 20 70 Yfs RDS(on) Max 1.5 VGS=2.5V,ID=1mA 3.2 5.0 2.2 3.0 27 VDS=3.0V,VGS=0,f=1MHZ A A V ms VGS=4.0V,ID=1mA Ciss Unit pF Output capacitance Coss 37 pF Reverse transfer capacitance Crss 8 pF Turn-on delay time td(on) 100 ns 300 ns 210 ns 240 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=10mA,VGS(on)=3.0V,RL=300 ,VDD=3.0V,RG=10 Marking Marking G14 www.kexin.com.cn 1