KEXIN 2SK1273

MOSFET
SMD Type
MOS Field Effect Transistor
2SK1273
SOT-89
Features
Unit: mm
+0.1
4.50-0.1
+0.1
1.50-0.1
+0.1
1.80-0.1
MAX.@VGS=4.0V,ID=0.5A
RDS(on)=0.65
MAX.@VGS=10V,ID=0.5A
1
2
3
+0.1
0.53-0.1
+0.1
0.48-0.1
+0.1
0.44-0.1
+0.1
2.60-0.1
Not necessary to consider driving current because
+0.1
0.80-0.1
RDS(on)=1.00
+0.1
2.50-0.1
Has low on-satate resistance
+0.1
4.00-0.1
Directly driver by Ics having a 5V power source.
of its high input impedance.
Possible to reduce the number of parts by omitting the biasresistor.
1 Gate
1. Source
Base
1.
+0.1
0.40-0.1
+0.1
3.00-0.1
2 Drain
Collector
2.2. Drain
3 Source
Emiitter
3.3. Gate
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Drain to source voltage
Parameter
VDSS
60
V
Gate to source voltage
VGSS
20
V
Drain current (DC)
ID
2.0
A
Drain current(pulse) *
ID
4.0
A
Power dissipation
PD
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
10ms, duty cycle
W
50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Testconditons
IDSS
VDS=60V,VGS=0
IGSS
VGS=
Min
20V,VDS=0
10
1.0
VDS=10V,ID=0.5A
0.4
RDS(on)
Max
1.7
2.5
VGS=4.0V,ID=0.5A
0.31
1.00
0.24
0.65
220
VDS=10V,VGS=0,f=1MHZ
A
A
V
s
VGS=10V,ID=0.5A
Ciss
Unit
10
VGS(off) VDS=10V,ID=1mA
Yfs
Typ
pF
Output capacitance
Coss
105
pF
Reverse transfer capacitance
Crss
16
pF
Turn-on delay time
td(on)
15
ns
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
ID=0.5A,VGS(on)=10V,RL=50
,VDD=25V,RG=10
35
ns
380
ns
120
ns
Marking
Marking
NA
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