MOSFET SMD Type MOS Field Effect Transistor 2SK1273 SOT-89 Features Unit: mm +0.1 4.50-0.1 +0.1 1.50-0.1 +0.1 1.80-0.1 MAX.@VGS=4.0V,ID=0.5A RDS(on)=0.65 MAX.@VGS=10V,ID=0.5A 1 2 3 +0.1 0.53-0.1 +0.1 0.48-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 Not necessary to consider driving current because +0.1 0.80-0.1 RDS(on)=1.00 +0.1 2.50-0.1 Has low on-satate resistance +0.1 4.00-0.1 Directly driver by Ics having a 5V power source. of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor. 1 Gate 1. Source Base 1. +0.1 0.40-0.1 +0.1 3.00-0.1 2 Drain Collector 2.2. Drain 3 Source Emiitter 3.3. Gate Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS 20 V Drain current (DC) ID 2.0 A Drain current(pulse) * ID 4.0 A Power dissipation PD 2.0 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle W 50% Electrical Characteristics Ta = 25 Parameter Symbol Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Testconditons IDSS VDS=60V,VGS=0 IGSS VGS= Min 20V,VDS=0 10 1.0 VDS=10V,ID=0.5A 0.4 RDS(on) Max 1.7 2.5 VGS=4.0V,ID=0.5A 0.31 1.00 0.24 0.65 220 VDS=10V,VGS=0,f=1MHZ A A V s VGS=10V,ID=0.5A Ciss Unit 10 VGS(off) VDS=10V,ID=1mA Yfs Typ pF Output capacitance Coss 105 pF Reverse transfer capacitance Crss 16 pF Turn-on delay time td(on) 15 ns Rise time tr Turn-off delay time td(off) Fall time tf ID=0.5A,VGS(on)=10V,RL=50 ,VDD=25V,RG=10 35 ns 380 ns 120 ns Marking Marking NA www.kexin.com.cn 1