ONSEMI 2N5194

2N5194, 2N5195
Preferred Devices
Silicon PNP Power
Transistors
These devices are designed for use in power amplifier and switching
circuits; excellent safe area limits. Complement to NPN 2N5191,
2N5192.
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Features
• Pb−Free Packages are Available*
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MAXIMUM RATINGS (Note 1)
Rating
Symbol
2N5194
2N5195
Unit
VCEO
60
80
Vdc
Collector−Base Voltage
VCB
60
80
Vdc
Emitter−Base Voltage
Collector−Emitter Voltage
VEB
5.0
Vdc
Collector Current
IC
4.0
Adc
Base Current
IB
1.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
40
320
W
W/°C
TJ, Tstg
– 65 to + 150
°C/W
Symbol
Max
Unit
qJC
3.12
°C/W
Operating and Storage Junction
Temperature Range
4 AMPERE
POWER TRANSISTORS
PNP SILICON
60 − 80 VOLTS
TO−225AA
CASE 77−09
STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
MARKING DIAGRAM
YWW
2
N519xG
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates JEDEC registered data.
Y
WW
2N519x
G
= Year
= Work Week
= Device Code
x = 4 or 5
= Pb−Free Package
ORDERING INFORMATION
Device
2N5194
2N5194G
2N5195
2N5195G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 12
1
Package
Shipping
TO−225
500 Units / Bulk
TO−225
(Pb−Free)
500 Units / Bulk
TO−225
500 Units / Bulk
TO−225
(Pb−Free)
500 Units / Bulk
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
2N5194/D
2N5194, 2N5195
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
60
80
−
−
−
−
1.0
1.0
−
−
−
−
0.1
0.1
2.0
2.0
−
−
0.1
0.1
−
1.0
25
20
10
7.0
100
80
−
−
−
−
0.6
1.4
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 0.1 Adc, IB = 0)
VCEO(sus)
Vdc
2N5194
2N5195
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
(VCE = 80 Vdc, IB = 0)
2N5194
2N5195
ICEO
Collector Cutoff Current
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C)
2N5194
2N5195
2N5194
2N5195
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
2N5194
2N5195
mAdc
ICEX
mAdc
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
mAdc
IEBO
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
hFE
2N5194
2N5195
2N5194
2N5195
(IC = 4.0 Adc, VCE = 2.0 Vdc)
−
Collector−Emitter Saturation Voltage (Note 3)
(IC = 1.5 Adc, IB = 0.15 Adc)
(IC = 4.0 Adc, IB = 1.0 Adc)
VCE(sat)
Vdc
Base−Emitter On Voltage (Note 3)
(IC = 1.5 Adc, VCE = 2.0 Vdc)
VBE(on)
−
1.2
Vdc
fT
2.0
−
MHz
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)
2. Indicates JEDEC registered data.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
hFE , DC CURRENT GAIN (NORMALIZED)
10
7.0
5.0
TJ = 150°C
VCE = 2.0 V
VCE = 10 V
3.0
2.0
1.0
0.7
0.5
25°C
−55 °C
0.3
0.2
0.1
0.004
0.007 0.01
0.02
0.03
0.05
0.1
0.2
0.3
IC, COLLECTOR CURRENT (AMP)
Figure 1. DC Current Gain
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2
0.5
1.0
2.0
3.0 4.0
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
2N5194, 2N5195
2.0
1.6
1.2
IC = 10 mA
100 mA
1.0 A
3.0 A
0.8
TJ = 25°C
0.4
0
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1.0
2.0
3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
50
70
100
200
300
500
2.0
TJ = 25°C
1.2
0.8
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
0.005 0.01 0.02 0.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
IC, COLLECTOR CURRENT (A)
μ
+1.0
+0.5
*qVC for VCE(sat)
0
−0.5
−1.0
qVB for VBE
−1.5
−2.0
−2.5
0.005 0.01 0.020.03 0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0 4.0
Figure 4. Temperature Coefficients
102
TJ = 150°C
101
10− 2
+1.5
Figure 3. “On” Voltage
VCE = 30 Vdc
10−1
*APPLIES FOR IC/IB ≤ hFE @ VCE
TJ = −65°C to +150°C
+2.0
IC, COLLECTOR CURRENT (AMP)
103
100
+2.5
IC, COLLECTOR CURRENT (AMP)
RBE , EXTERNAL BASE−EMITTER RESISTANCE (OHMS)
VOLTAGE (VOLTS)
1.6
θV, TEMPERATURE COEFFICIENTS (mV/°C)
Figure 2. Collector Saturation Region
100°C
REVERSE
FORWARD
25°C
10− 3
+0.4 +0.3 +0.2 +0.1
ICES
0
−0.1 −0.2
−0.3
−0.4 −0.5 −0.6
107
VCE = 30 V
106
IC = 10 x ICES
105
IC = 2 x ICES
IC ≈ ICES
104
103
102
20
VBE, BASE−EMITTER VOLTAGE (VOLTS)
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 5)
40
60
80
100
120
140
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Collector Cut−Off Region
Figure 6. Effects of Base−Emitter Resistance
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3
160
2N5194, 2N5195
VCC
TURN−ON PULSE
VBE(off)
Vin 0
TJ = 25°C
Vin
RB
SCOPE
300
Cjd<<Ceb
t1
APPROX
+9.0 V
t2
+4.0 V
RB AND RC VARIED
TO OBTAIN DESIRED
CURRENT LEVELS
Vin
APPROX
−11 V
500
CAPACITANCE (pF)
APPROX
−11 V
RC
t3
TURN−OFF PULSE
200
Ceb
100
Ccb
70
t1 ≤ 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE ≈ 2.0%
50
0.1
0.2 0.3
0.5
tr @ VCC = 10 V
0.3
0.2
0.1
0.07
0.05
td @ VBE(off) = 2.0 V
0.03
0.02
0.2 0.3
0.05 0.07 0.1
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0
0.03
0.02
0.05 0.07 0.1
3.0 4.0
Figure 9. Turn−On Time
IC, COLLECTOR CURRENT (AMP)
0.1
1.0
tf @ VCC = 10 V
0.2 0.3
0.5 0.7 1.0
IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
Note 1:
There are two limitations on the power handling ability of
a transistor; average junction temperature and second
breakdown. Safe operating area curves indicate I C − V CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 11 is based on T J(pk) = 150_C. T C is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
v 150_C. At high−case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by second breakdown.
1.0 ms
5.0 ms
5.0
0.2
tf @ VCC = 30 V
Figure 10. Turn−Off Time
10
0.5
20 30 40
IB1 = IB2
IC/IB = 10
ts′ = ts − 1/8 tf
TJ = 25°C
ts′
0.7
0.5
tr @ VCC = 30 V
t, TIME (s)
μ
t, TIME (s)
μ
1.0
0.3
0.2
1.0
10
2.0
IC/IB = 10
TJ = 25°C
1.0
2.0
5.0
Figure 8. Capacitance
2.0
0.1
0.07
0.05
2.0 3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Switching Time Equivalent Test Circuit
0.7
0.5
1.0
100 ms
TJ = 150°C
dc
SECONDARY BREAKDOWN LIMIT
THERMAL LIMIT @ TC = 25°C
BONDING WIRE LIMIT
CURVES APPLY BELOW RATED VCEO
2N5194
2N5195
2.0
5.0
10
20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
100
Figure 11. Rating and Thermal Data
Active−Region Safe Operating Area
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4
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
2N5194, 2N5195
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
qJC(max) = 3.12°C/W
0.2
0.1
0.05
0.02
SINGLE PULSE
0.02 0.03
0.01
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 12. Thermal Response
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
A train of periodical power pulses can be represented by
the model shown in Figure 13. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 12 was calculated for various
duty cycles.
To find qJC(t), multiply the value obtained from Figure 12
by the steady state value qJC.
Example:
The 2N5193 is dissipating 50 watts under the following
conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).
Using Figure 12, at a pulse width of 0.1 ms and D = 0.2,
the reading of r(t1, D) is 0.27.
The peak rise in junction temperature is therefore:
tP
PP
PP
t1
1/f
t1
tP
PEAK PULSE POWER = PP
DUTY CYCLE, D = t1 f =
Figure 13.
DT = r(t) x PP x qJC = 0.27 x 50 x 3.12 = 42.2_C
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5
2N5194, 2N5195
PACKAGE DIMENSIONS
TO−225
CASE 77−09
ISSUE Z
−B−
U
F
Q
−A−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
077−09.
C
M
1 2 3
H
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
K
J
V
G
S
R
0.25 (0.010)
A
M
M
B
M
D 2 PL
0.25 (0.010)
M
A
M
B
M
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5_ TYP
0.148
0.158
0.045
0.065
0.025
0.035
0.145
0.155
0.040
−−−
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5 _ TYP
3.76
4.01
1.15
1.65
0.64
0.88
3.69
3.93
1.02
−−−
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
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