Transistors SMD Type PNP Epitaxial Planar Silicon Transistors 2SB1325 Features Low saturation voltage. Contains diode between collector and emitter. Contains bias resistance between base and emitter. Large current capacity. Small-sized package making it easy to provide highdensity, small-sized hybrid ICs. Electrical Connection Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -6 V IC -4 A Collector current Collector current (pulse) ICP -6 A Collector dissipation PC * 1.5 W Tj 150 Tstg -55 to +150 Jumction temperature Storage temperature 2 * Mounted on ceramic board (250mm X0.8mm) www.kexin.com.cn 1 Transistors SMD Type 2SB1325 Electrical Characteristics Ta = 25 Parameter Symbol Collector cutoff current ICBO DC current Gain hFE Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Min Typ VCB = 20V , IE = 0 VCE = -2V , IC = -0.5A 70 VCE = -2V , IC = -3A 50 Max Unit -1 ìA fT VCE = -2V , IC = -0.5A 300 MHz Cob VCB = -10V , f = 1MHz 60 pF VCE(sat) IC = -3A , IB = -150mA -0.25 VBE(sat) VCE = -3V , IC = -150mA -0.5 V -1.5 V Collector-base breakdown voltage V(BR)CBO IC = -10ìA , IE = 0 -25 V Collector-emitter breakdown voltage V(BR)CEO IC = -10ìA , RBE = -25 V Base-emitter on state voltage V(BR)CEO IC = -10mA , RBE = -20 Diode forward voltage VF Base-emitter resistance RBE Marking Marking 2 Testconditons BM www.kexin.com.cn V IF=0.5A 1.5 1.5 V KÙ