TYSEMI 2SB1325

Transistors
SMD Type
Product specification
2SB1325
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between base and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Electrical Connection
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-25
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-6
V
IC
-4
A
Collector current
Collector current (pulse)
ICP
-6
A
Collector dissipation
PC *
1.5
W
Tj
150
Tstg
-55 to +150
Jumction temperature
Storage temperature
2
* Mounted on ceramic board (250mm X0.8mm)
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
2SB1325
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
DC current Gain
hFE
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Testconditons
Min
Typ
VCB = 20V , IE = 0
VCE = -2V , IC = -0.5A
70
VCE = -2V , IC = -3A
50
Max
Unit
-1
ìA
fT
VCE = -2V , IC = -0.5A
300
MHz
Cob
VCB = -10V , f = 1MHz
60
pF
VCE(sat) IC = -3A , IB = -150mA
-0.25
VBE(sat) VCE = -3V , IC = -150mA
-0.5
V
-1.5
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -10ìA , RBE =
-25
V
Base-emitter on state voltage
V(BR)CEO IC = -10mA , RBE =
-20
Diode forward voltage
VF
Base-emitter resistance
RBE
V
IF=0.5A
1.5
1.5
V
KÙ
Marking
Marking
BM
http://www.twtysemi.com
[email protected]
4008-318-123
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