Ordering number : ENA1629 ON Semiconductor DATA SHEET N-Channel Silicon MOSFET EFC4615R General-Purpose Switching Device Applications Features • • • 2.5V drive Best suited for LiB charging and discharging switch Common-drain type Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7067-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel 1.46 3 Taping Type : TR Marking 1.46 4 FQ TR LOT No. 2 0.22 1 Electrical Connection 0.37 0.15 1 0.65 Rg 0.65 2 1 2 4 3 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.3 Rg 3 SANYO : EFCP1515-4CC-037 Rg=200Ω © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 www.onsemi.com 4 Publication Order Number: EFC4615R/D EFC4615R Electrical Characteristics at Ta=25°C Parameter Symbol Source-to-Source Breakdown Voltage V(BR)SSS Zero-Gate Voltage Source Current ISSS Gate-to-Source Leakage Current IGSS Cutoff Voltage Forward Transfer Admittance Ratings Conditions min typ Unit max 24 Test Circuit 1 VGS(off) VGS=±8V, VSS=0V VSS=10V, IS=1mA Test Circuit 3 | yfs | VSS=10V, IS=3A Test Circuit 4 RSS(on)1 IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 19 27 31 mΩ RSS(on)2 Test Circuit 5 21 28 33 mΩ RSS(on)3 IS=3A, VGS=3.1V Test Circuit 5 24 33 44 mΩ RSS(on)4 IS=3A, VGS=2.5V Test Circuit 5 28 39 52 mΩ Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 13 ns Rise Time tr See specified Test Circuit. Test Circuit 7 235 ns Turn-OFF Delay Time td(off) See specified Test Circuit. Test Circuit 7 335 ns Fall Time tf See specified Test Circuit. Test Circuit 7 360 ns Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A 8.8 nC Forward Source-to-Source Voltage VF(S-S) IS=6A, VGS=0V Static Source-to-Source On-State Resistance Test Circuit 1 V IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 2 0.5 1 μA ±10 μA 1.3 5.4 1 Test Circuit 6 1.2 Test circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS(+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS(off) IT11566 Test Circuit 4 | yfs | S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 IT11568 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Rev. 0 | Page 2 of 4 | www.onsemi.com V S V EFC4615R Test Circuit 5 RSS(on) Test Circuit 6 VF(S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 8 Qg Test Circuit 7 td(on), tr, td(off), tf VDD=10V S2 IS=3A RL=3.33Ω V S2 OUT VIN G2 G2 G1 PW=10μs D.C.≤1% G1 S1 S1 IT11571 IS -- VGS 5.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ VSS=10V 4.5 3.5 3.0 2.5 2.0 25°C 1.0 --25°C Ta= 75°C 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V RSS(on) -- Ta Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 70 =4. VGS 3A , I S= 2.5V =3A = V, I S VGS =3.1 S VG A , I S=3 =4.5V S VG 30 20 10 0 --60 --40 --20 0 20 40 60 80 50 40 30 20 0 2 4 100 Ambient Temperature, Ta -- °C 120 140 160 6 8 10 Gate-to-Source Voltage, VGS -- V IT15253 3A I = 0V, S 40 60 IT15254 | yfs | -- IS 10 60 50 Ta=25°C IS=3A 70 10 1.6 Forward Transfer Admittance, | yfs | -- S Source Current, IS -- A 4.0 1.5 IT15409 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. RSS(on) -- VGS 80 VSS=10V 7 5 Ta= 3 °C --25 C 75° 25 2 °C 1.0 7 0.1 IT15255 Rev. 0 | Page 3 of 4 | www.onsemi.com 2 3 5 7 1.0 2 Source Current, IS -- A 3 5 7 10 IT15256 EFC4615R IS -- VF(S-S) Switching Time, SW Time -- ns 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 VGS -- Qg td(off) 3 tf 2 100 tr 7 5 3 2 td(on) 7 0.01 1.2 3.0 2.5 2.0 1.5 1.0 0.5 1 2 3 4 5 6 7 8 Total Gate Charge, Qg -- nC PT -- Ta 1.8 5 7 0.1 2 9 10 IT15260 3 5 7 1.0 2 3 5 7 10 100 7 5 3 2 10 7 5 3 2 ISP=60A (PW≤10μs) 10 0μ 1m s s IS=6A 10 ms 10 DC 1.0 7 5 3 2 0.1 7 5 3 2 IT15258 ASO 2 3.5 0 3 Source Current, IS -- A VSS=10V IS=6A 4.0 2 IT15257 Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 4.5 0m s op era Operation in this area is limited by RSS(on). tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source-to-Source Voltage, VSS -- V 2 3 5 IT15534 When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 Total Dissipation, PT -- W 5 10 Forward Source-to-Source Voltage, VF(S-S) -- V 0 VSS=10V VGS=4.5V 7 1.0 7 5 3 2 0.001 SW Time -- IS 1000 VGS=0V Ta=7 5°C 25°C --25°C Source Current, IS -- A 10 7 5 3 2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT15535 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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