EFC4602 Ordering number : ENA1048 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4602 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Source-to-Source Voltage VSSS 20 V Gate-to-Source Voltage VGSS ±12 V Source Current (DC) Total Dissipation IS ISP PT 1.6 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Source Current (Pulse) PW≤100μs, duty cycle≤1% When mounted on ceramic substrate (5000mm2✕0.8mm) 6 A 60 A Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Symbol min Test Circuit 1 Cutoff Voltage VGS(off) VSS=10V, IS=1mA Test Circuit 3 0.5 Forward Transfer Admittance ⏐yfs⏐ RSS(on)1 VSS=10V, IS=3A Test Circuit 4 4.5 7.5 Static Source-to-Source On-State Resistance Marking : FB Unit max IS=1mA, VGS=0V VSS=20V, VGS=0V VGS=±8V, VSS=0V Gate-to-Source Leakage Current Test Circuit 1 typ ISSS IGSS Zero-Gate Voltage Source Current V(BR)SSS Ratings Conditions 20 V Test Circuit 2 1 μA ±10 μA 1.3 V S IS=3A, VGS=4.5V Test Circuit 5 19.5 28 36.5 mΩ RSS(on)2 RSS(on)3 IS=3A, VGS=4.0V Test Circuit 5 20 29 38 mΩ IS=1.5A, VGS=3.1V Test Circuit 5 23 33 43 mΩ RSS(on)4 IS=1.5A, VGS=2.5V Test Circuit 5 23 38 53.5 mΩ Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40208PF TI IM TC-00001296 No. A1048-1/6 EFC4602 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge min typ Unit max VSS=10V, f=1MHz VSS=10V, f=1MHz VSS=10V, f=1MHz Test Circuit 8 1000 pF Test Circuit 8 180 pF Test Circuit 8 140 pF td(on) tr See specified Test Circuit. Test Circuit 7 23 ns See specified Test Circuit. Test Circuit 7 185 ns td(off) tf See specified Test Circuit. Test Circuit 7 160 ns See specified Test Circuit. Test Circuit 7 200 ns 13 nC Qg Forward Source-to-Source Voltage Ratings Conditions VF(S-S) VSS=10V, VGS=10V, IS=6A IS=6A, VGS=0V Package Dimensions Test Circuit 6 0.78 1.2 V Electrical Connection unit : mm (typ) 7056-001 1 1.81 4 3 2 0.65 4 3 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 2 0.65 1 3 0.27 1 0.28 1.81 2 0.37 SANYO : EFCP1818-4CA-055 No. A1048-2/6 EFC4602 Test Circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS (+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS (off) IT11566 Test Circuit 4 ⏐yfs⏐ S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 Test Circuit 5 RSS (on) IT11568 Test Circuit 6 VF (S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 7 td (on), tr, td (off), tf VDD=10V IS=3A RL=3.33Ω V S1 OUT VIN G1 PW=10μs D.C.≤1% G2 S2 IT11571 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1048-3/6 EFC4602 Test Circuit 8 Ciss Coss S2 S2 G2 G2 Capacitance bridge G1 G1 Capacitance bridge S1 S1 IT11972 IT11973 IT11974 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Crss S2 G2 G1 Capacitance bridge S1 RSS(on) -- VGS Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 80 IS=1.5A 70 3A 60 50 40 30 20 10 0 2 4 6 8 Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 25°C 5 3 5 --2 °C C 75° 2 1.0 7 0.1 2 3 5 7 1.0 2 Source Current, IS -- A 3 20 10 10 7 5 3 2 10 Ta= 30 0 5 7 10 IT13279 50 100 150 Ambient Temperature, Ta -- °C VSS=10V 7 VG 5A, IT13277 ⏐yfs⏐ -- IS 2 2.5V S= 3.1V 1. S= I S= VG , 1.5A I S= V V =4.0 =4.5 VGS , VGS , A A 0 0 . . I S=3 I S=3 40 0 --50 10 Gate-to-Source Voltage, VGS -- V 50 200 IT13278 IS -- VF(S-S) VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 5°C 25° C --25° C Static Source-to-Source On-State Resistance, RDS(on) -- mΩ 90 0 RSS(on) -- Ta 60 Ta=25°C Tc= 7 100 0.01 7 5 3 2 0.001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Forward Source-to-Source Voltage, VF(S-S) -- V IT13322 No. A1048-4/6 EFC4602 SW Time -- IS 2 1000 f=1MHz 2 7 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns Ciss, Coss, Crss -- VSS 3 VSS=10V VGS=4A td(off) 2 tf 100 tr 7 5 3 Ciss 1000 7 5 3 Coss Crss 2 td(on) 2 100 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 IT13280 Source Current, IS -- A Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT13282 PT -- Ta 1.8 4 6 8 10 12 14 16 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 18 20 IT13281 ASO 2 VSS=10V IS=6A 4.0 2 Source-to-Source Voltage, VSS -- V VGS -- Qg 4.5 ISP=60A IS=6A ≤10μs 100 μs 1m s 10 ms DC 100 op ms era tio n Operation in this area is limited by RSS(on). 0.1 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (5000mm2✕0.8mm) 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 2 3 5 7 0.1 Source-to-Source Voltage, VSS -- V IT13323 When mounted on ceramic substrate (5000mm2✕0.8mm) 1.6 Total Dissipation, PT -- W 0 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13324 No. A1048-5/6 EFC4602 Note on usage : Since the EFC4602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of April, 2008. Specifications and information herein are subject to change without notice. PS No. A1048-6/6