SANYO ENA1048

EFC4602
Ordering number : ENA1048
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC4602
General-Purpose Switching Device
Applications
Features
•
•
•
2.5V drive.
Best suited for LiB charging and discharging switch.
Common-drain type.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Source-to-Source Voltage
VSSS
20
V
Gate-to-Source Voltage
VGSS
±12
V
Source Current (DC)
Total Dissipation
IS
ISP
PT
1.6
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Source Current (Pulse)
PW≤100μs, duty cycle≤1%
When mounted on ceramic substrate (5000mm2✕0.8mm)
6
A
60
A
Electrical Characteristics at Ta=25°C
Parameter
Source-to-Source Breakdown Voltage
Symbol
min
Test Circuit 1
Cutoff Voltage
VGS(off)
VSS=10V, IS=1mA
Test Circuit 3
0.5
Forward Transfer Admittance
⏐yfs⏐
RSS(on)1
VSS=10V, IS=3A
Test Circuit 4
4.5
7.5
Static Source-to-Source On-State Resistance
Marking : FB
Unit
max
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
Gate-to-Source Leakage Current
Test Circuit 1
typ
ISSS
IGSS
Zero-Gate Voltage Source Current
V(BR)SSS
Ratings
Conditions
20
V
Test Circuit 2
1
μA
±10
μA
1.3
V
S
IS=3A, VGS=4.5V
Test Circuit 5
19.5
28
36.5
mΩ
RSS(on)2
RSS(on)3
IS=3A, VGS=4.0V
Test Circuit 5
20
29
38
mΩ
IS=1.5A, VGS=3.1V
Test Circuit 5
23
33
43
mΩ
RSS(on)4
IS=1.5A, VGS=2.5V
Test Circuit 5
23
38
53.5
mΩ
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
40208PF TI IM TC-00001296 No. A1048-1/6
EFC4602
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
min
typ
Unit
max
VSS=10V, f=1MHz
VSS=10V, f=1MHz
VSS=10V, f=1MHz
Test Circuit 8
1000
pF
Test Circuit 8
180
pF
Test Circuit 8
140
pF
td(on)
tr
See specified Test Circuit.
Test Circuit 7
23
ns
See specified Test Circuit.
Test Circuit 7
185
ns
td(off)
tf
See specified Test Circuit.
Test Circuit 7
160
ns
See specified Test Circuit.
Test Circuit 7
200
ns
13
nC
Qg
Forward Source-to-Source Voltage
Ratings
Conditions
VF(S-S)
VSS=10V, VGS=10V, IS=6A
IS=6A, VGS=0V
Package Dimensions
Test Circuit 6
0.78
1.2
V
Electrical Connection
unit : mm (typ)
7056-001
1
1.81
4
3
2
0.65
4
3
4
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
2
0.65
1
3
0.27
1
0.28
1.81
2
0.37
SANYO : EFCP1818-4CA-055
No. A1048-2/6
EFC4602
Test Circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
Test Circuit 2
IGSS (+) / (--)
S2
S2
G2
G2
G1
G1
S1
S1
IT11565
Test Circuit 3
VGS (off)
IT11566
Test Circuit 4
⏐yfs⏐
S2
S2
G2
G2
10V 1mA
G1
G1
S1
S1
IT11567
Test Circuit 5
RSS (on)
IT11568
Test Circuit 6
VF (S-S)
S2
S2
4.5V
G2
G2
G1
G1
S1
S1
IT11569
IT11570
Test Circuit 7
td (on), tr, td (off), tf
VDD=10V
IS=3A
RL=3.33Ω
V
S1 OUT
VIN
G1
PW=10μs
D.C.≤1%
G2
S2
IT11571
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
No. A1048-3/6
EFC4602
Test Circuit 8
Ciss
Coss
S2
S2
G2
G2
Capacitance
bridge
G1
G1
Capacitance
bridge
S1
S1
IT11972
IT11973
IT11974
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
Crss
S2
G2
G1
Capacitance
bridge
S1
RSS(on) -- VGS
Static Source-to-Source
On-State Resistance, RSS(on) -- mΩ
80
IS=1.5A
70
3A
60
50
40
30
20
10
0
2
4
6
8
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
25°C
5
3
5
--2
°C
C
75°
2
1.0
7
0.1
2
3
5
7
1.0
2
Source Current, IS -- A
3
20
10
10
7
5
3
2
10
Ta=
30
0
5
7
10
IT13279
50
100
150
Ambient Temperature, Ta -- °C
VSS=10V
7
VG
5A,
IT13277
⏐yfs⏐ -- IS
2
2.5V
S=
3.1V
1.
S=
I S=
VG
,
1.5A
I S=
V
V
=4.0
=4.5
VGS
, VGS
,
A
A
0
0
.
.
I S=3
I S=3
40
0
--50
10
Gate-to-Source Voltage, VGS -- V
50
200
IT13278
IS -- VF(S-S)
VGS=0V
1.0
7
5
3
2
0.1
7
5
3
2
5°C
25°
C
--25°
C
Static Source-to-Source
On-State Resistance, RDS(on) -- mΩ
90
0
RSS(on) -- Ta
60
Ta=25°C
Tc=
7
100
0.01
7
5
3
2
0.001
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Forward Source-to-Source Voltage, VF(S-S) -- V IT13322
No. A1048-4/6
EFC4602
SW Time -- IS
2
1000
f=1MHz
2
7
5
3
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
Ciss, Coss, Crss -- VSS
3
VSS=10V
VGS=4A
td(off)
2
tf
100
tr
7
5
3
Ciss
1000
7
5
3
Coss
Crss
2
td(on)
2
100
7
10
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT13280
Source Current, IS -- A
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
1
2
3
4
5
6
7
8
9
10
Total Gate Charge, Qg -- nC
11
12
13
IT13282
PT -- Ta
1.8
4
6
8
10
12
14
16
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
18
20
IT13281
ASO
2
VSS=10V
IS=6A
4.0
2
Source-to-Source Voltage, VSS -- V
VGS -- Qg
4.5
ISP=60A
IS=6A
≤10μs
100
μs
1m
s
10
ms
DC 100
op ms
era
tio
n
Operation in this area
is limited by RSS(on).
0.1
7
5 Ta=25°C
3 Single pulse
2
When mounted on ceramic substrate (5000mm2✕0.8mm)
0.01
2 3 5 7 1.0
2 3 5 7 10
2 3 5
0.01 2 3 5 7 0.1
Source-to-Source Voltage, VSS -- V IT13323
When mounted on ceramic substrate
(5000mm2✕0.8mm)
1.6
Total Dissipation, PT -- W
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13324
No. A1048-5/6
EFC4602
Note on usage : Since the EFC4602 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of April, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1048-6/6