EFC4606 Ordering number : ENA1177 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4606 General-Purpose Switching Device Applications Features • • • 2.5V drive. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage VSSS VGSS Gate-to-Source Voltage Source Current (DC) Conditions Ratings Unit 24 V ±12 V IS Source Current (Pulse) ISP PW≤100μs, duty cycle≤1% Total Dissipation PT Tch When mounted on ceramic substrate (5000mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 6 A 60 A 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Source-to-Source Breakdown Voltage Zero-Gate Voltage Source Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Source-to-Source On-State Resistance Symbol Ratings Conditions min V(BR)SSS ISSS IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 1 IGSS VGS(off) ⏐yfs⏐ VGS=±8V, VSS=0V VSS=10V, IS=1mA VSS=10V, IS=3A Test Circuit 2 RSS(on)1 RSS(on)2 RSS(on)3 RSS(on)4 typ Unit max 24 V Test Circuit 1 1 μA ±10 μA Test Circuit 3 0.5 Test Circuit 4 5.3 8.9 IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 22 30 38 mΩ Test Circuit 5 23 32 41 mΩ IS=1.5A, VGS=3.1V IS=1.5A, VGS=2.5V Test Circuit 5 26 35 45 mΩ Test Circuit 5 30.5 41 57.5 mΩ Marking : FF 1.3 V S Continued on next page. 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To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 92408PF TI IM TC-00001623 No. A1177-1/6 EFC4606 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss VSS=10V, f=1MHz Test Circuit 8 1050 pF Output Capacitance Coss VSS=10V, f=1MHz Test Circuit 8 170 pF Reverse Transfer Capacitance Crss VSS=10V, f=1MHz Test Circuit 8 124 pF Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 22 ns Rise Time tr td(off) See specified Test Circuit. Test Circuit 7 92 ns See specified Test Circuit. Test Circuit 7 205 ns tf See specified Test Circuit. Test Circuit 7 141 ns 13 nC Turn-OFF Delay Time Fall Time Total Gate Charge Qg Forward Source-to-Source Voltage VF(S-S) VSS=10V, VGS=4.5V, IS=6A IS=6A, VGS=0V Package Dimensions Test Circuit 6 1 1.2 V Electrical Connection unit : mm (typ) 7059-001 1 1.81 4 3 1.81 2 3 2 0.28 1 0.27 4 0.65 2 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.65 1 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 3 0.37 SANYO : EFCP1818-4CA-055-1 No. A1177-2/6 EFC4606 Test Circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS (+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS (off) IT11566 Test Circuit 4 ⏐yfs⏐ S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 Test Circuit 5 RSS (on) IT11568 Test Circuit 6 VF (S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 7 td (on), tr, td (off), tf VDD=10V IS=3A RL=3.33Ω V S1 OUT VIN G1 PW=10μs D.C.≤1% G2 S2 IT11571 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1177-3/6 EFC4606 Test Circuit 8 Ciss Coss S2 S2 G2 G2 Capacitance bridge G1 G1 Capacitance bridge S1 S1 IT11972 IT11973 IT11974 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. Crss S2 G2 G1 Capacitance bridge S1 IS -- VSS 2.5 2.0 1.5 4 3 1 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Source-to-Source Voltage, VSS -- V 0.9 0 1.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ IS=1.5A 70 3A 60 50 40 30 20 10 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT13590 1.0 1.5 2.0 2.5 IT13589 RSS(on) -- Ta 80 90 0 0.5 Gate-to-Source Voltage, VGS -- V Ta=25°C 80 0 IT14034 RSS(on) -- VGS 100 Static Source-to-Source On-State Resistance, RDS(on) -- mΩ 5 2 1.0 0 6 25°C 3.0 5°C 3.5 7 --25 °C .5V V SS=1 Ta= 7 4.0 8 Source Current, IS -- A 4.5 4.0 Source Current, IS -- A 5.0 VSS=10V 9 V 10.0V 4.5 V 5.5 IS -- VGS 10 3.1V 2.5 V 6.0 70 60 5A =1. , IS V 5 1.5A =2. I = V GS 3.1V, S = VGS A =3.0 3.0A V, I S , I S= 5 . V 4 0 . = =4 VGS VGS 50 40 30 20 10 0 --50 0 50 100 150 Ambient Temperature, Ta -- °C 200 IT13591 No. A1177-4/6 EFC4606 ⏐yfs⏐ -- IS 7 25°C 5 C 5° 2 =-Ta °C 75 3 2 VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 2 1.0 3 5 Source Current, IS -- A 7 10 IT13592 0 7 td(off) 2 tf 100 7 tr 3 0.6 0.8 1.0 1.2 1.4 Ciss, Coss, Crss -- VSS f=1MHz 2 Ciss, Coss, Crss -- pF 5 5 0.4 3 VSS=10V VGS=4.5A 3 0.2 Forward Source-to-Source Voltage, VF(S-S) -- V IT13963 SW Time -- IS 1000 Tc=75 °C 25°C --25° C 0.01 7 5 3 2 0.001 1.0 0.1 Switching Time, SW Time -- ns IS -- VF(S-S) 2 VSS=10V Source Current, IS -- A Forward Transfer Admittance, ⏐yfs⏐ -- S 10 Ciss 1000 7 5 3 Coss Crss 2 td(on) 2 100 7 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Source Current, IS -- A Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 5 6 7 8 9 10 Total Gate Charge, Qg -- nC 11 12 13 IT13811 PT -- Ta 1.8 2 3 4 5 6 7 8 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 9 10 IT13861 ASO 2 VSS=10V IS=6A 4.0 1 Source-to-Source Voltage, VSS -- V VGS -- Qg 4.5 ISP=60A IS=6A PW≤100μs 100 μs 1m s 10 Operation in this area is limited by RSS(on). ms DC 10 op 0ms era tio n 0.1 7 5 Ta=25°C 3 Single pulse 2 When mounted on ceramic substrate (5000mm2✕0.8mm) 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 5 0.01 2 3 5 7 0.1 Source-to-Source Voltage, VSS -- V IT13594 When mounted on ceramic substrate (5000mm2✕0.8mm) 1.6 Total Dissipation, PT -- W 0 5 7 10 IT13810 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13595 No. A1177-5/6 EFC4606 Note on usage : Since the EFC4606 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2008. Specifications and information herein are subject to change without notice. PS No. A1177-6/6