EFC6602R Ordering number : ENA2152 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC6602R Lithium-ion battery charging and discharging switch Features • • • 2.5V drive Common-drain type 2KV ESD HBM • • Protection diode in Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Source-to-Source Voltage Conditions Ratings VSSS VGSS Gate-to-Source Voltage Source Current (DC) IS ISP Source Current (Pulse) Total Dissipation Channel Temperature PT Tch Storage Temperature Tstg Unit 12 V ±12 V 18 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 2.0 W 150 °C --55 to +150 °C Package Dimensions Product & Package Information unit : mm (typ) 7073-001 • Package : EFCP • JEITA, JEDEC :• Minimum Packing Quantity : 5,000 pcs./reel EFC6602R-TR 2.7 6 5 Taping Type : TR 4 Marking 1.81 MB LOT No. TR 2 3 Electrical Connection 0.2 1 4, 6 0.65 0.65 1 : Source1 2 : Gate1 3 : Source1 4 : Source2 5 : Gate2 6 : Source2 0.3 Rg 5 SANYO : EFCP2718-6CE-020 Rg 2 Rg=200Ω 1, 3 http://www.sanyosemi.com/en/network/ N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8 EFC6602R Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Unit max 12 V Source-to-Source Breakdown Voltage V(BR)SSS ISSS Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VSS=0V VSS=6V, IS=1mA Test Circuit 2 Cutoff Voltage Forward Transfer Admittance | yfs | VSS=6V, IS=3A Test Circuit 4 RSS(on)1 RSS(on)2 Test Circuit 5 3.1 4.5 5.9 Test Circuit 5 3.3 4.8 6.3 mΩ RSS(on)3 IS=3A, VGS=4.5V IS=3A, VGS=4.0V IS=3A, VGS=3.8V Test Circuit 5 3.5 5 6.5 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 4.0 5.8 8.2 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 5.2 7.5 11 mΩ Turn-ON Delay Time Test Circuit 1 typ Zero-Gate Voltage Source Current Static Source-to-Source On-State Resistance IS=1mA, VGS=0V VSS=10V, VGS=0V min Test Circuit 1 Test Circuit 3 0.5 ±1 μA 13 Rise Time Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg VDD=6V, VGS=4.5V, IS=18A Test Circuit 8 55 Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Test Circuit 6 0.76 Test Circuit 7 μA 1.3 td(on) tr VDD=6V, VGS=4.5V, IS=3A 1 V S mΩ 530 ns 2100 ns 6200 ns 5500 ns nC 1.2 V Ordering Information Device EFC6602R-TR Package Shipping memo EFCP 5,000pcs./reel Pb Free and Halogen Free No. A2152-2/8 EFC6602R Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 ISSS S2 S2 G2 G2 A VSS G1 G1 A VGS S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 Test Circuit 3 VGS(off) Test Circuit 4 | yfs | S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS G1 VGS VSS G1 VGS S1 Test Circuit 6 VF(S-S) Test Circuit 5 RSS(on) S2 S2 4.5V IS IF G2 G2 V V G1 VGS VGS=0V G1 S1 S1 When FET1 is measured,+4.5V is added to VGS of FET2. Test Circuit 8 Qg Test Circuit 7 td(on), tr, td(off), tf S2 S2 RL A G2 G2 When FET1 is measured, Gate and Source of FET2 are short-circuited. V IG =1mA G1 R R S1 PG When FET1 is measured, Gate and Source of FET2 are short-circuited. S1 VDD PG 50Ω G1 RL S1 VDD When FET1 is measured, Gate and Source of FET2 are short-circuited. No. A2152-3/8 EFC6602R VSS=6V 18 14 12 10 8 6 25°C 4 --25°C Ta=75° C 2 0 0.5 1.0 1.5 Switching Time, S/W Time -- ns 0.4 0.6 0.8 1.0 Forward Source to Source Voltage, VF(S-S) -- V Qg -- VGS 4.5 2.0 1.5 1.0 0.5 10 20 30 40 50 Total Gate Charge, Qg -- nC tr 2 1K 7 td(on) 5 3 2 VSS=6V VGS=4.5V ,V A =3 ID =4 V GS 4 .0V 0 --60 --40 --20 0 =4 V GS 2 3 5 7 1.0 2 3 5 7 10 2 3 IT16989 Ta=25°C IS=3A 45 40 35 30 25 20 15 10 5 0 2 4 6 8 10 IT16991 ID -- VSS 4.5V 4.0V .1V .5V , , 5 7 0.1 RSS(on) -- VGS 5.0 =3 GS A =3 ID 3A I D= 3 4.5 4.0 3.1V 7V =3. V GS V 2 3.5 2.5V A, =3 ID tf Gate to Source Voltage, VGS -- V Drain Current, ID -- A Static Source to Source On State Resistance, RSS(on) -- mΩ 10 5 7 10 IT16987 3 0 60 .5V =2 GS 2 3 5 5.5 2 5 7 1.0 td (off) 6.0 12 6 2 3 S/W Time -- IS IT16990 RSS(on) -- Ta 14 , 3A I D= 5 7 0.1 Source Current, IS -- A Static Source to Source On State Resistance, RSS(on) -- mΩ Gate to Source Voltage, VGS -- V 2.5 8 5 7 0.01 2 3 50 3.0 0 3 2 IT16988 3.5 0 0.1 7 5 100 0.01 1.2 VSS=6V IS=18A 4.0 °C 25 V 25°C --25°C 3 2 Ta= 75°C Source Current, IS -- A 1.0 7 5 0 3 2 7 3 2 0.01 1.0 7 5 10K 10 7 5 3 2 C 5° --2 = °C Ta 75 Source Current, IS -- A VGS=0V 0.1 7 5 3 2 IT16986 IS -- VF(S-S) 3 2 10 7 5 0.01 0.001 2 3 2.0 Gate to Source Voltage, VGS -- V VSS=6V 1.5 0 | yfs | -- IS 3 2 10.0V Source Current, IS -- A 16 Forward Transfer Admittance, | yfs | -- S IS -- VGS 20 3.0 2.5 2.0 1.3V V GS= 1.5 1.0 0.5 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT16992 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Source to Source Voltage, VDS -- V 0.9 1.0 IT16993 No. A2152-4/8 EFC6602R 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 ASO 10 0μ 1m s s ISP=60A(PW≤10μs) IS=18A 10 DC Operation in this area is limited by RDS(on). ms 10 0m op s era tio n Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W Source Current, IS -- A 100 7 5 3 2 2 3 5 7 10 Source Voltage to Source Voltage, VSS -- V 2 3 IT16994 When mounted on ceramic substrate (5000mm2×0.8mm) 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 IT16995 No. A2152-5/8 EFC6602R Taping Specification EFC6602R-TR No. A2152-6/8 EFC6602R Outline Drawing EFC6602R-TR Land Pattern Example Mass (g) Unit 0.0024 mm * For reference Unit: mm No. A2152-7/8 EFC6602R Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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