SANYO EFC6602R

EFC6602R
Ordering number : ENA2152
SANYO Semiconductors
DATA SHEET
N-Channel Silicon MOSFET
EFC6602R
Lithium-ion battery charging and
discharging switch
Features
•
•
•
2.5V drive
Common-drain type
2KV ESD HBM
•
•
Protection diode in
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Source-to-Source Voltage
Conditions
Ratings
VSSS
VGSS
Gate-to-Source Voltage
Source Current (DC)
IS
ISP
Source Current (Pulse)
Total Dissipation
Channel Temperature
PT
Tch
Storage Temperature
Tstg
Unit
12
V
±12
V
18
A
PW≤10μs, duty cycle≤1%
60
A
When mounted on ceramic substrate (5000mm2×0.8mm)
2.0
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7073-001
• Package
: EFCP
• JEITA, JEDEC
:• Minimum Packing Quantity : 5,000 pcs./reel
EFC6602R-TR
2.7
6
5
Taping Type : TR
4
Marking
1.81
MB
LOT No.
TR
2
3
Electrical Connection
0.2
1
4, 6
0.65
0.65
1 : Source1
2 : Gate1
3 : Source1
4 : Source2
5 : Gate2
6 : Source2
0.3
Rg
5
SANYO : EFCP2718-6CE-020
Rg
2
Rg=200Ω
1, 3
http://www.sanyosemi.com/en/network/
N2112 TKIM TC-00002838/HD 121009 PF No. A2152-1/8
EFC6602R
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Unit
max
12
V
Source-to-Source Breakdown Voltage
V(BR)SSS
ISSS
Gate-to-Source Leakage Current
IGSS
VGS(off)
VGS=±8V, VSS=0V
VSS=6V, IS=1mA
Test Circuit 2
Cutoff Voltage
Forward Transfer Admittance
| yfs |
VSS=6V, IS=3A
Test Circuit 4
RSS(on)1
RSS(on)2
Test Circuit 5
3.1
4.5
5.9
Test Circuit 5
3.3
4.8
6.3
mΩ
RSS(on)3
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.8V
Test Circuit 5
3.5
5
6.5
mΩ
RSS(on)4
IS=3A, VGS=3.1V
Test Circuit 5
4.0
5.8
8.2
mΩ
RSS(on)5
IS=3A, VGS=2.5V
Test Circuit 5
5.2
7.5
11
mΩ
Turn-ON Delay Time
Test Circuit 1
typ
Zero-Gate Voltage Source Current
Static Source-to-Source On-State Resistance
IS=1mA, VGS=0V
VSS=10V, VGS=0V
min
Test Circuit 1
Test Circuit 3
0.5
±1
μA
13
Rise Time
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VDD=6V, VGS=4.5V, IS=18A
Test Circuit 8
55
Forward Source-to-Source Voltage
VF(S-S)
IS=3A, VGS=0V
Test Circuit 6
0.76
Test Circuit 7
μA
1.3
td(on)
tr
VDD=6V, VGS=4.5V, IS=3A
1
V
S
mΩ
530
ns
2100
ns
6200
ns
5500
ns
nC
1.2
V
Ordering Information
Device
EFC6602R-TR
Package
Shipping
memo
EFCP
5,000pcs./reel
Pb Free and Halogen Free
No. A2152-2/8
EFC6602R
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
ISSS
S2
S2
G2
G2
A
VSS
G1
G1
A
VGS
S1
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
Test Circuit 3
VGS(off)
Test Circuit 4
| yfs |
S2
S2
G2
G2
A
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
VSS
G1
VGS
VSS
G1
VGS
S1
Test Circuit 6
VF(S-S)
Test Circuit 5
RSS(on)
S2
S2
4.5V
IS
IF
G2
G2
V
V
G1
VGS
VGS=0V
G1
S1
S1
When FET1 is
measured,+4.5V is added to
VGS of FET2.
Test Circuit 8
Qg
Test Circuit 7
td(on), tr, td(off), tf
S2
S2
RL
A
G2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
IG =1mA
G1
R
R
S1
PG
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
S1
VDD
PG
50Ω
G1
RL
S1
VDD When FET1 is measured,
Gate and Source of FET2
are short-circuited.
No. A2152-3/8
EFC6602R
VSS=6V
18
14
12
10
8
6
25°C
4
--25°C
Ta=75°
C
2
0
0.5
1.0
1.5
Switching Time, S/W Time -- ns
0.4
0.6
0.8
1.0
Forward Source to Source Voltage, VF(S-S) -- V
Qg -- VGS
4.5
2.0
1.5
1.0
0.5
10
20
30
40
50
Total Gate Charge, Qg -- nC
tr
2
1K
7
td(on)
5
3
2
VSS=6V
VGS=4.5V
,V
A
=3
ID
=4
V GS
4
.0V
0
--60
--40 --20
0
=4
V GS
2
3
5 7 1.0
2
3
5 7 10
2
3
IT16989
Ta=25°C
IS=3A
45
40
35
30
25
20
15
10
5
0
2
4
6
8
10
IT16991
ID -- VSS
4.5V
4.0V
.1V
.5V
,
,
5 7 0.1
RSS(on) -- VGS
5.0
=3
GS
A
=3
ID
3A
I D=
3
4.5
4.0
3.1V
7V
=3.
V GS
V
2
3.5
2.5V
A,
=3
ID
tf
Gate to Source Voltage, VGS -- V
Drain Current, ID -- A
Static Source to Source
On State Resistance, RSS(on) -- mΩ
10
5 7 10
IT16987
3
0
60
.5V
=2
GS
2 3
5
5.5
2
5 7 1.0
td (off)
6.0
12
6
2 3
S/W Time -- IS
IT16990
RSS(on) -- Ta
14
,
3A
I D=
5 7 0.1
Source Current, IS -- A
Static Source to Source
On State Resistance, RSS(on) -- mΩ
Gate to Source Voltage, VGS -- V
2.5
8
5 7 0.01 2 3
50
3.0
0
3
2
IT16988
3.5
0
0.1
7
5
100
0.01
1.2
VSS=6V
IS=18A
4.0
°C
25
V
25°C
--25°C
3
2
Ta=
75°C
Source Current, IS -- A
1.0
7
5
0
3
2
7
3
2
0.01
1.0
7
5
10K
10
7
5
3
2
C
5°
--2
=
°C
Ta
75
Source Current, IS -- A
VGS=0V
0.1
7
5
3
2
IT16986
IS -- VF(S-S)
3
2
10
7
5
0.01
0.001 2 3
2.0
Gate to Source Voltage, VGS -- V
VSS=6V
1.5
0
| yfs | -- IS
3
2
10.0V
Source Current, IS -- A
16
Forward Transfer Admittance, | yfs | -- S
IS -- VGS
20
3.0
2.5
2.0
1.3V
V GS=
1.5
1.0
0.5
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT16992
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Source to Source Voltage, VDS -- V
0.9
1.0
IT16993
No. A2152-4/8
EFC6602R
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
ASO
10
0μ
1m s
s
ISP=60A(PW≤10μs)
IS=18A
10
DC
Operation in this area
is limited by RDS(on).
ms
10
0m
op
s
era
tio
n
Ta=25°C
Single pulse
When mounted on ceramic substrate (5000mm2×0.8mm)
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
Source Current, IS -- A
100
7
5
3
2
2
3
5 7 10
Source Voltage to Source Voltage, VSS -- V
2
3
IT16994
When mounted on ceramic substrate
(5000mm2×0.8mm)
2.0
1.5
1.0
0.5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
IT16995
No. A2152-5/8
EFC6602R
Taping Specification
EFC6602R-TR
No. A2152-6/8
EFC6602R
Outline Drawing
EFC6602R-TR
Land Pattern Example
Mass (g) Unit
0.0024 mm
* For reference
Unit: mm
No. A2152-7/8
EFC6602R
Note on usage : Since the EFC6602R is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
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party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of November, 2012. Specifications and information herein are subject
to change without notice.
PS No. A2152-8/8