Ordering number : EN2006D 2SA1417/2SC3647 Bipolar Transistor http://onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs • • • • Specifications ( ) : 2SA1417 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 V (--)100 V (--)6 V Collector Current VEBO IC (--)2 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) (--)3 A 500 mW 1.5 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 TD 0.4 0.4 0.5 Marking AC 1.5 3.0 RANK RANK 2SA1417 0.75 LOT No. 3 CC 2 LOT No. 2.5 1.0 1 Packing Type: TD 4.0 1.5 2SA1417S-TD-E 2SA1417T-TD-E 2SC3647S-TD-E 2SC3647T-TD-E 2SC3647 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2013 September, 2013 1 2 1 3 2SA1417 3 2SC3647 90512 TKIM/22006EA MSIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2006-1/7 2SA1417 / 2SC3647 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions Ratings min typ max Unit ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)100mA (--0.22)0.13 (--0.6)0.4 V IC=(--)1A, IB=(--)100mA (--)0.85 (--)1.2 V Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time 100* VCE=(--)10V, IC=(--)100mA (--)100 nA (--)100 nA 400* 120 MHz (25)16 pF V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V (80)80 ns (750)1000 ns (40)50 ns * : The 2SA1417 / 2S3647 are classified by 100mA hFE as follws : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL + 50Ω 100μF VBE= --5V + 470μF VCC=50V IC=10IB1= --10IB2=0.7A For PNP, the polarity is reversed. Ordering Information Package Shipping 2SA1417S-TD-E Device PCP 1,000pcs./reel 2SA1417T-TD-E PCP 1,000pcs./reel 2SC3647S-TD-E PCP 1,000pcs./reel 2SC3647T-TD-E PCP 1,000pcs./reel memo Pb Free No.2006-2/7 2SA1417 / 2SC3647 IC -- VCE --2.0 2SC3647 --10mA --1.2 --5mA --0.8 --3mA --2mA --1mA --0.4 --1 --2 --3 10mA 5mA 0.8 3mA 2mA IB=0mA 0 0 5.0 Collector Current, IC -- A --4mA --3mA --0.6 --2mA --0.4 --1mA 3 4 5 ITR03543 IC -- VCE --5m --0.8 2 1.0 2SA1417 A 1 Collector-to-Emitter Voltage, VCE -- V ITR03542 mA A m --6 20mA 1.2 --5 IC -- VCE --1.0 1.6 1mA --4 Collector-to-Emitter Voltage, VCE -- V 40mA 30mA A 50m 0.4 IB=0mA 0 0 Collector Current, IC -- A Collector Current, IC -- A Collector Current, IC -- A --1.6 IC -- VCE 2.0 A A 0m 0m --4 --3 A --20m 2SA1417 2SC3647 A 4.5m 4.0mA 3.5mA 0.8 3.0mA 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 --0.2 0.5mA 0 0 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0 40 50 ITR03545 IC -- VBE 2SC3647 VCE=5V --1.2 --0.8 1.6 1.2 °C 25°C --25°C --1.6 0.8 Ta=7 5 Collector Current, IC -- A 2.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 30 2SA1417 VCE= --5V --0.4 0.4 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03546 0 0.8 1.0 1.2 ITR03547 hFE -- IC 2SC3647 VCE=5V 5 DC Current Gain, hFE Ta=75°C 25°C 2 --25°C 100 3 100 7 5 5 --2 --3 --5 --7 --0.1 --2 --3 --5 --7 --1.0 Collector Current, IC -- A --2 --3 ITR03548 Ta=75°C 25°C --25°C 2 7 --7--0.01 0.6 7 5 3 0.4 1000 2SA1417 VCE= --5V 7 0.2 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 DC Current Gain, hFE 20 2.4 --2.0 3 10 Collector-to-Emitter Voltage, VCE -- V ITR03544 IC -- VBE --2.4 IB=0mA 0 --50 3 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03549 No.2006-3/7 2SA1417 / 2SC3647 f T -- IC 2 1 2SA 7 64 C3 7 2S 5 3 2 For PNP minus sign is omitted. 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2SA 3 141 7 2SC 364 7 2 10 7 3 7 3 5 3 2 --100 C 25° 5°C 7 = Ta 7 5 3 2 2 1.0 3 5 --25°C 7 2 10 3 5 7 100 2 ITR03551 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 1000 2SA1417 IC / IB=10 7 For PNP minus sign is omitted. ITR03550 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC --1000 --10 2SC3647 IC / IB=10 7 5 3 2 100 25°C Tc=75°C 7 5 3 --25°C 2 10 7 2 --0.01 3 5 --0.1 2 3 5 Collector Current, IC -- A 7 7 --1.0 2 3 7 0.01 3 2 25°C 7 75°C 2 7 --0.01 3 5 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 3 5 7 1.0 2 3 ITR03553 VBE(sat) -- IC 2SC3647 IC / IB=10 5 3 2 Ta= --25°C 1.0 25°C 7 75°C 5 7 0.01 3 s m 10 s 0m 1.0 7 5 s DC op era 3 2 tio n 0.1 7 5 3 For PNP minus sign is omitted. Ta=25°C Single pulse Mounted on a ceramic board (250mm2✕0.8mm) 2 0.01 7 5 5 7 1.0 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- 7 100 2 V ITR03556 5 7 0.1 2 3 5 7 1.0 2 3 ITR03555 PC -- Ta 1.8 2SA1417 / 2SC3647 1m 10 IC=2A 3 Collector Current, IC -- A ASO ICP=3A 2 ITR03554 Collector Dissipation, PC -- W 3 2 2 3 3 5 7 0.1 7 5 5 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 7 Ta= --25°C 3 Collector Current, IC -- A 2SA1417 IC / IB=10 --1.0 2 ITR03552 VBE(sat) -- IC --10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 5 10 Collector Current, IC -- A 2SA1417 / 2SC3647 f=1MHz 7 417 100 Cob -- VCB 100 2SA1417 / 2SC3647 VCE=10V Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 3 2SA1417 / 2SC3647 1.6 1.5 M ou 1.4 nt 1.2 ed on ac er 1.0 am ic bo ar d 0.8 (2 50 m 0.6 0.5 0.4 Infin ite h eat s m2 ✕ 0.8 m ink m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10757 No.2006-4/7 2SA1417 / 2SC3647 Embossed Taping Specification 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E No.2006-5/7 2SA1417 / 2SC3647 Outline Drawing Land Pattern Example 2SA1417S-TD-E, 2SA1417T-TD-E, 2SC3647S-TD-E, 2SC3647T-TD-E Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2006-6/7 2SA1417 / 2SC3647 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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