ROHM 2SA1514K

2SA1579 / 2SA1514K
Datasheet
PNP -50mA -120V High-Voltage Amplifier Transistors
lOutline
Parameter
Value
VCEO
IC
-120V
-50mA
UMT3
SMT3
Collector
Collector
Base
Base
Emitter
Emitter
2SA1579
SOT-323 (SC-70)
lFeatures
1) High Breakdown Voltage (BVCEO= -120V)
2SA1514AK
SOT-346 (SC-59)
2) Complementary NPN Types :
2SC4102 (UMT3) / 2SC3906K (SMT3)
3) Complex transistors :
IMT4 (SMT6)
4) Lead Free/RoHS Compliant.
lInner circuit
Collector
lApplications
High Voltage Amplifier
Base
Emitter
lPackaging specifications
Package
Package
size
(mm)
Taping
code
2SA1579
UMT3
2021
T106
180
8
3,000
Rx*1
2SA1514K
SMT3
2928
T146
180
8
3,000
Rx
Part No.
Basic
Reel size Tape width
ordering
(mm)
(mm)
unit (pcs)
Marking
*1
*1 x : hFE rank
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© 2013 ROHM Co., Ltd. All rights reserved.
1/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
-120
V
Collector-emitter voltage
VCEO
-120
V
Emitter-base voltage
VEBO
-5
V
IC
-50
mA
-100
mA
PD *2
200
mW
Tj
150
°C
Tstg
-55 to +150
°C
Collector current
ICP
2SA1579
2SA1514K
Power dissipation
Junction temperature
Range of storage temperature
*1
lElectrical characteristics(Ta = 25°C)
Parameter
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
Symbol
Conditions
Min.
Typ.
Max.
Unit
BVCEO
IC = -1mA
-120
-
-
V
BVCBO
IC = -50mA
-120
-
-
V
BVEBO
IE = -50mA
-5
-
-
V
Collector cut-off current
ICBO
VCB = -100V
-
-
-0.5
mA
Emitter cut-off current
IEBO
VEB = -4V
-
-
-0.5
mA
VCE(sat)
IC = -10mA, IB = -1mA
-
-
-0.5
V
hFE
VCE = -6V, IC = -2mA
180
-
560
-
Collector-emitter
saturation voltage
DC current gain
Transition frequency
fT
VCE = -12V, IE = 2mA
f=100MHZ
-
140
-
MHz
Output capacitance
Cob
VCB = -12V, IE = 0mA,
f = 1MHz
-
3.2
-
pF
*1 PW=100ms Single Pulse
*2 Each terminal mounted on a reference footprint
lhFE rank categories
Rank
hFE
R
180 to 390
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© 2013 ROHM Co., Ltd. All rights reserved.
S
270 to 560
2/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Typical Output Characteristics
Fig.1 Ground Emitter Propagation Characteristics
-10
COLLECTOR CURRENT : IC [mA]
COLLECTOR CURRENT : IC [mA]
VCE= -6V
Ta=-40ºC
25ºC
100ºC
-1
-0.1
0
-0.5
-1
-1.5
-2
BASE TO EMITTER VOLTAGE : VBE [V]
COLECTOR TO EMITTE VOLTAGE : VCE [V]
Fig.3 DC Current Gain vs. Collector Current(I)
Fig.4 DC Current Gain vs. Collector Current(II)
10000
10000
Ta=25ºC
1000
Ta=100ºC
25ºC
-40ºC
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
VCE= -6V
100
10
-0.1
-1
-10
100
10
-0.1
-100
COLLECTOR CURRENT : IC [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
1000
VCE= -5V
-3V
-1V
-1
-10
-100
COLLECTOR CURRENT : IC [mA]
3/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lElectrical characteristic curves(Ta = 25°C)
Fig.6 Collector-Emitter Saturation Voltage
vs. Collector Current (II)
Fig.5 Collector-Emitter Saturation Voltage
vs. Collector Current (I)
-10
-10
Ta=25ºC
-1
Ta=100ºC
25ºC
-40ºC
-0.1
-0.01
-0.1
-1
-10
-100
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
COLLECTOR-EMITTER
SATURATION VOLTAGE : VCE(sat) [V]
IC / IB = 10/1
COLLECTOR CURRENT : IC [mA]
-1
IC / IB =50/1
20/1
10/1
-0.1
-0.01
-0.1
-1
-10
-100
COLLECTOR CURRENT : IC [mA]
Fig.8 Gain Bandwidth Product
vs. Emitter Current
Fig.7 Base-Emitter Saturation Voltage
vs. Collector Current
-10
TRANSITION FREQUENCY : fT [MHz]
BASE-EMITTER
SATURATION VOLTAGE : VBE(sat) [V]
IC / IB = 10/1
Ta= -40ºC
25ºC
100ºC
-1
-0.1
-0.1
-1
-10
-100
EMITTER CURRENT :IE [mA]
COLLECTOR CURRENT : IC [mA]
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© 2013 ROHM Co., Ltd. All rights reserved.
4/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lElectrical characteristic curves(Ta = 25°C)
Fig.10 Safe Operating Area
100
-1000
Ta=25ºC
f=1MHz
IE=0A
2SA1579
COLLECTOR CURRENT : IC [mA]
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]
EMITTER INPUT CAPACITANCE : Cib [pF]
Fig.9 Emitter input capacitance vs.
Emitter-Base Voltage
Collector output capacitance vs.
Collector-Base Voltage
Cib
10
Cob
1
-0.1
-1
-10
-100
1ms
10ms
100ms
-10
DC
(Mounted on a
reference land)
-1
Ta=25ºC
Single non repetitive pulse
-0.1
-0.1
-100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
-1
-10
-100
-1000
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.11 Safe Operating Area
-1000
COLLECTOR CURRENT : IC [mA]
2SA1514K
-100
1ms
10ms
100ms
-10
DC
(Mounted on a
reference land)
-1
Ta=25ºC
Single non repetitive pulse
-0.1
-0.1
-1
-10
-100
-1000
COLLECTOR TO EMITTER VOLTAGE : VCE [V]
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© 2013 ROHM Co., Ltd. All rights reserved.
5/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lDimensions (Unit : mm)
D
A
UMT3
c
e
b
x
Lp
L1
HE
E
Q
A3
S A
e1
l1
A1
A
e
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
0.80
1.00
0.00
0.10
0.25
0.15
0.30
0.10
0.20
1.90
2.10
1.15
1.35
0.65
2.00
2.20
0.20
0.50
0.25
0.55
0.10
0.30
0.10
INCHES
MIN
0.031
0.000
MAX
0.039
0.004
0.010
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
0.026
0.079
0.008
0.010
0.004
-
MILIMETERS
MIN
MAX
0.50
1.55
0.65
0.087
0.020
0.022
0.012
0.004
INCHES
MIN
-
MAX
0.020
0.061
-
0.026
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
6/7
2013.05 - Rev.B
Data Sheet
2SA1579 / 2SA1514K
lDimensions (Unit : mm)
D
A
SMT3
c
Lp
L1
E
HE
Q
e
A3
b
x
S A
l1
A1
A
e1
e
S
b2
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]
DIM
A
A1
A3
b
c
D
E
e
HE
L1
Lp
Q
x
y
DIM
b2
e1
l1
MILIMETERS
MIN
MAX
1.00
1.30
0.00
0.10
0.25
0.35
0.50
0.09
0.25
2.80
3.00
1.50
1.80
0.95
2.60
3.00
0.30
0.60
0.40
0.70
0.20
0.30
0.10
0.10
INCHES
MIN
0.039
0.000
MAX
0.051
0.004
0.010
0.014
0.004
0.110
0.059
0.020
0.010
0.118
0.071
0.037
0.102
0.012
0.016
0.008
-
MILIMETERS
MIN
MAX
0.60
2.10
0.90
0.118
0.024
0.028
0.012
0.004
0.004
INCHES
MIN
-
MAX
0.024
0.083
-
0.035
Dimension in mm / inches
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© 2013 ROHM Co., Ltd. All rights reserved.
7/7
2013.05 - Rev.B
Notice
Notes
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
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ROHM.
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R1102A