Midium Power Transistors (80V / 1.5A) 2SCR554R Features 1) Low saturation voltage, typically V CE (sat) = 0.3V (Max.) (I C / I B= 500mA / 25mA) Dimensions (Unit : mm) TSMT3 2) High speed switching (3) (1) Structure NPN Silicon epitaxial planar transistor (1) Base (2) Emitter (3) Collector Applications Driver (3) (1) Package TSMT3 Code TL Basic ordering unit (pieces) 3000 Absolute maximum ratings (Ta = 25C) Parameter Symbol (1) Base (2) Emitter (3) Collector Limits Unit VCBO VCEO VEBO 80 V 80 6 V V DC IC Pulsed ICP PD *1 1.5 3 0.5 A A W PD *3 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Abbreviated symbol : NH Inner circuit Packaging specifications Type (2) Power dissipation Junction temperature Range of storage temperature Tj Tstg *2 1.0 W 150 -55 to 150 C C (2) *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 40 x 40 x 0.7[mm3] ceramic substrate. www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/5 2010.06 - Rev.A Data Sheet 2SCR554R Electrical characteristic (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-emitter breakdown voltage BVCEO 80 - - V IC= 1mA Collector-base breakdown voltage BVCBO 80 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 80V Emitter cut-off current IEBO - - 1 A VEB= 4V VCE(sat) - 100 300 hFE 120 - 390 Collector-emitter staturation voltage DC current gain mV IC= 500mA, I B= 25mA - fT - 300 - Collector output capacitance Cob - 10 - pF Turn-on time ton *1 - 50 - ns Storage time tstg *1 - 600 - ns t f *1 - 60 - ns Transition frequency Fall time VCE= 3V, IC= 100mA VCE= 10V MHz IE=-200mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 0.7A, I B1= 70mA, IB2=-70mA, V CC ~ _ 10V *1 See switching time test circuit www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/5 2010.06 - Rev.A 2SCR554R Data Sheet Electrical characteristic curves (Ta = 25C) Fig2. DC Current Gain vs. Collector Current(Ⅰ) Fig1. Typical Output Characteristics 1000 0.50 1.5mA 0.40 2.0mA 3mA 2.5mA 4mA 0.30 DC CURRENT GAIN :hFE COLLECTOR CURRENT :IC[A] Ta=25℃ 1.0mA 5mA 0.20 100 VCE=5V 3V 0.5mA 0.10 Ta=25℃ 0.00 10 0 1 1.5 2 1 10 10000 Fig3. DC Current Gain vs.Collector Current(Ⅱ) Fig4. Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ) 1 VCE=3V Ta=125℃ 75℃ 25℃ -40℃ 10 Ta=25℃ IC/IB=50 20 10 0.1 0.01 0.001 1 10 100 1000 10000 1 10 COLLECTOR CURRENT :IC[mA] 100 1000 10000 COLLECTOR CURRENT :IC[mA] Fig5. Collector-Emitter Saturation Voltage vs. Collector Current(Ⅱ) Fig.6 Ground Emitter Propagation Characteristics 10000 IC/IB=20 COLLECTOR CURRENT :IC[mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] 1000 COLLECTOR CURRENT :IC[mA] 100 1 100 COLECTOR TO EMITTER VOLTAGE:VCE[V] COLLECTOR SATURATION V VOLTAGE :VCE(sat)[V] DC CURRENT GAIN :hFE 1000 0.5 0.1 Ta=125℃ 75℃ 25℃ -40℃ 0.01 VCE=3V 1000 Ta=125℃ 75℃ 25℃ -40℃ 100 10 1 1 10 100 1000 10000 0 COLLECTOR CURRENT :IC[mA] www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/5 0.5 1 BASE TO EMITTER VOLTAGE: VBE[V] 2010.06 - Rev.A Data Sheet 2SCR554R Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs. Collector-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current 1000 Ta=25℃ VCE=10V Ta=25℃ f=1MHz IE=0A IC=0A TRANSITIO ON FREQUENCY :fT[MHz] COLLECTOR OUTP PUT CAPACITANCE : Cob(pF) EMITTER INPUT T CAPACITANCE : Cib(pF) 1000 100 Cib 10 100 Cob 10 1 0.1 1 10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 100 100 1000 EMITTER CURRENT :IE[mA] 4/5 2010.06 - Rev.A Data Sheet 2SCR554R Switching time test circuit =15 RRLL=7.5Ω IB1 VIN IC VCC ~_10V IB2 Pw Pw ~_50μs DUTY CYCLE1% IB1 BASE CURENT WAVEFORM IB2 ton tstg tf 90% IC COLLECTOR CURRENT WAVEFORM 10% www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 5/5 2010.06 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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