ROHM 2SCR543D

Midium Power Transistors (50V / 4A)
2SCR543D
 Structure
NPN Silicon epitaxial planar transistor
 Dimensions (Unit : mm)
CPT3
6.5
5.1
(SC-63)
<SOT-428>
2.3
0.5
(1) Base
(2) Collector
(3) Emitter
 Packaging specifications
9.5
0.8Min.
0.75
 Applications
Driver
Package
Code
Basic ordering unit (pieces)
2.5
0.9
2) High speed switching
Type
1.5
5.5
1.5
 Features
1) Low saturation voltage
V CE (sat) = 0.35V (Max.) (I C / I B= 2A / 100mA)
0.65
0.9
2.3
(1)
(2)
(3)
2.3
0.5
1.0
 Inner circuit (Unit : mm)
CPT3
TL
2500
(2)
(1)
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
Emitter-base voltage
VCEO
VEBO
Collector current
DC
Pulsed
Power dissipation
Junction temperature
Range of storage temperature
Limits
Unit
50
50
V
V
6
4
IC
ICP *1
8
PD *2
1
*3
PD
10
150
Tj
Tstg
-55 to 150
(1) Base
(2) Collector
(3) Emitter
(3)
V
A
A
W
W
°C
°C
*1 Pw=10ms, Single Pulse
*2 Mounted on a substrate
*3 TC=25°C
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©2010 ROHM Co., Ltd. All rights reserved.
1/5
2010.12 - Rev.A
2SCR543D
Data Sheet
Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
BVCEO
50
-
-
V
IC= 1mA
Collector-base breakdown voltage
BVCBO
50
-
-
V
IC= 100μA
Emitter-base breakdown voltage
BVEBO
6
-
-
V
IE= 100μA
Collector cut-off current
ICBO
-
-
1
μA
VCB= 50V
Emitter cut-off current
IEBO
-
-
1
μA
VEB= 4V
*1
VCE(sat)
-
130
350
hFE
180
-
450
Collector-emitter staturation voltage
DC current gain
Transition frequency
f T *1
-
300
-
mV IC= 2A, IB= 100mA
-
Collector output capacitance
Cob
-
20
-
pF
Turn-on time
ton *2
-
50
-
ns
Storage time
tstg *2
-
450
-
ns
t f *2
-
85
-
ns
Fall time
VCE= 3V, IC= 100mA
VCE= 10V
MHz
IE=-500mA, f=100MHz
VCB= 10V, IE=0A
f=1MHz
IC= 2A, IB1= 200mA,
_ 10V
IB2=-200mA, V CC~
*1 Pulsed
*2 See switching time test circuit
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©2010 ROHM Co., Ltd. All rights reserved.
2/5
2010.12 - Rev.A
2SCR543D
Data Sheet
Electrical characteristic curves (Ta=25C)
Fig.1 Typical OutputCharacteristics
5mA
Fig.2 DC Current Gain vs. Collector Current ( I )
4mA
1.0
1000
Ta=25C
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC[A]
3mA
0.8
2.5mA
0.6
2.0mA
1.5mA
0.4
VCE=5V
3V
100
1.0mA
0.2
IB=0.5mA
Ta=25C
10
0.0
0
0.5
1
1.5
1
2
10
10000
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
Fig3. DC Current Gain vs. Collector Current ( II )
1000
1
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
VCE=3V
DC CURRENT GAIN : hFE
1000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Ta=125°C
75°C
25°C
-40°C
100
Ta=25C
0.1
IC/IB=50
20
10
0.01
0.001
10
1
10
100
1000
1
10000
10
COLLECTOR CURRENT : IC[mA]
100
1000
10000
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
Fig.6 Ground Emitter Propagation Characteristics
1
10000
VCE=3V
COLLECTOR CURRENT : IC[mA]
COLLECTOR SATURATION VOLTAGE : VCE(sat)[V]
100
0.1
Ta=125°C
75°C
25°C
-40°C
0.01
1000
Ta=125°C
75°C
25°C
-40°C
100
10
IC/IB=20
0.001
1
1
10
100
1000
10000
0
COLLECTOR CURRENT : IC[mA]
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©2010 ROHM Co., Ltd. All rights reserved.
0.5
1
1.5
BASE TO EMITTER VOLTAGE : VBE[V]
3/5
2010.12 - Rev.A
2SCR543D
Data Sheet
Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.8 Gain Bandwidth Product vs. Emitter Current
1000
Ta=25C
f=1MHz
IE=0A
IC=0A
Cib
Ta=25C
VCE=10V
TRANSITION FREQUENCY : fT[MHz]
COLLECTOR OUTPUT CAPACITANCE : Cob(pF)
EMITTER INPUT CAPACITANCE : Cib(pF)
1000
100
10
Cob
1
100
10
0.1
1
10
100
10
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
100
1000
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
COLLECTOR CURRENT : IC [A]
1ms
10ms
1
DC
Tc=25C
0.1
DC Ta=25C
(Mounted on a substrate)
Tc=25°C
Single non repetitive pulse
0.01
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.12 - Rev.A
2SCR543D
Data Sheet
 Switching time test circuit
RL=4.7Ω
VIN
I B1
IC
_ 10V
VCC~
IB2
_ 50μs
Pw ~
Pw
DUTY CYCLE≦1%
I B1
BASE CURENT WAVEFORM
I B2
ton
tstg
tf
90%
IC
COLLECTOR CURRENT WAVEFORM
10%
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©2010 ROHM Co., Ltd. All rights reserved.
5/5
2010.12 - Rev.A
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R1010A