ROHM 2SD2704K

For Muting (20V, 0.3A)
2SD2704K / 2SD2705S
Dimensions (Unit : mm)
Features
1) High DC current gain.
hFE = 820 to 2700
2) High emitter-base voltage.
VEBO = 25V (Min.)
3) Low Ron
Ron= 0.7 (Typ.)
2SD2704K
2.9
1.1
0.4
0.8
1.6
2.8
(3)
(2)
(1)
0.3Min.
Structure
Epitaxial planar type
NPN silicon transistor
0.95 0.95
0.15
1.9
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : XL
2SD2705S
2.0
3Min.
3.0
4.0
Package
Type
(15Min.)
Packaging specifications
Taping
Code
T146
TP
Basic ordering
unit (pieces)
3000
5000
2.5
0.5
0.45
5.0
(1) (2) (3)
ROHM : SPT
EIAJ : SC-72
−
2SD2704K
2SD2705S
0.45
(1) Emitter
(2) Collector
(3) Base
−
Absolute maximum ratings (Ta=25C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
IC
0.3
A
Parameter
Collector current
Collector power 2SD2704K
dissipation
2SD2705S
PC
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
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c 2010 ROHM Co., Ltd. All rights reserved.
○
0.2
0.3
W
1/4
2010.01 - Rev.B
2SD2704K/2SD2705S
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
50
−
−
V
IC=10μA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
Parameter
Conditions
BVEBO
25
−
−
V
IE=10μA
Collector cutoff current
ICBO
−
−
0.1
μA
VCB=50V
Emitter cutoff current
IEBO
−
−
0.1
μA
VEB=25V
VCE(sat)
−
50
100
mV
IC/IB=30mA/3mA
hFE
820
−
2700
−
VCE=2V, IC=4mA
Collector-emitter saturation voltage
DC current transfer ratio
fT∗
−
35
−
MHz
Output capacitance
Cob
−
3.9
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.7
−
Ω
IB=5mA, Vi=100mV(rms), f=1kHz
Transition frequency
VCE=6V, IE= −4mA, f=10MHz
∗ Measured using pulse current



Electrical characteristic curves
1000
Ta=125°C
100
25°C
−40°C
10
0.1
0.1
0
0.4
0.6
0.8
1
VCE=2V
Ta=125°C
100
25°C
−40°C
10
0.1
0.2
0.4
0.6
0.8
1
1000
Ta=25°C
Ta= −40°C
100
10
1.2
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation
characteristics ( Ι )

Fig.2 Grounded emitter propagation
characteristics ( ΙΙ )

Fig.3 DC current gain
vs. collector current ( )
VCE=6V
Ta=125°C
1000
Ta=25°C
Ta= −40°C
100
10
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain
vs. collector current (


)

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c 2010 ROHM Co., Ltd. All rights reserved.
○
10000
IC/IB=10/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
10
100
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
BASE TO EMITTER VOLTAGE : VBE(ON) (V)
10000
DC CURRENT GAIN : hFE
10000
Ta=125°C
0.1
0
1.2
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)


0.2
VCE=6V
DC CURRENT GAIN : hFE
VCE=2V
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
1000
10000

IC/IB=20/1
1000
Ta=125°C
100
Ta=25°C
10
Ta= −40°C
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )

Fig.6 Collector-emitter saturation voltage
vs. collector current ( )

2/4
2010.01 - Rev.B
1000
Ta=125°C
100
Ta=25°C
Ta= −40°C
10
1
1
10
100
1000
10000
IC/IB=10/1
Ta= −40°C
1000
Ta=125°C
100
1
10
100

IC/IB=50/1
Ta= −40°C
1
Ta=25°C
10
100
10000
IC/IB=20/1
Ta= −40°C
1000
Ta=125°C
100
1
1
1000
1
COLLECTOR CURRENT : IC (mA)
10
10
100
1000

100
Fig.9 Base-emitter saturation voltage
vs. collector current ( )

100
Ta=25°C
f=1MHz
IE=0A

10
1
0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE (mA)
Fig.10 Base-emitter saturation voltage
vs. collector current ( )
Ta=25°C
COLLECTOR CURRENT : IC (mA)
Ta=25°C
f=50MHz
IE=0A
TRANSITION FREQUENCY : fT (MHz)
BASE SATURATION VOLTAGE : VBE(sat) (mV)


Ta=125°C
1000
Fig.8 Base-emitter saturation voltage
vs. collector current ( )

Fig.7 Collector-emitter saturation voltage
vs. collector current ( )

1000
100
10000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
10000
Ta=25°C
BASE SATURATION VOLTAGE : VBE(sat) (mV)
IC/IB=50/1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
10000
Data Sheet
BASE SATURATION VOLTAGE : VBE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
2SD2704K/2SD2705S
Fig.12 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Fig.11 Gain bandwidth product
vs. emitter current


10
1
0.1 See Fig.15
0.01
0.1



















100
Ta= 25°C
ON RESISTANCE : Ron (Ω)
ON RESISTANCE : Ron (Ω)
100
1
10
100
Ta= 25°C
10
1
0.1 See Fig.16
0.01
0.1
1
10
100
BASE CURRENT : IB (mA)
BASE CURRENT : IB (mA)
Fig.13 Output-on resistance vs. base current ( ) 
Fig.14 Output-on resistance vs. base current ( ) 
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c 2010 ROHM Co., Ltd. All rights reserved.
○
3/4

2010.01 - Rev.B
2SD2704K/2SD2705S
Data Sheet
Ron measurement circuit

RL=1kΩ
RL=1kΩ
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
Ron=
v0
vi−v0
Input
Vi
100mV(rms)
1V(rms)
f=1kHz
V Output
v0
IB
×RL
Ron=
v0
vi−v0
×RL
Fig.15 Ron measurement circuit ( )
Fig.16 Ron measurement circuit ( )







This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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c 2010 ROHM Co., Ltd. All rights reserved.
○
4/4

2010.01 - Rev.B
Notice
Notes
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which can be obtained from ROHM upon request.
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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R1010A