PD - 96366B
AUTOMOTIVE MOSFET
AUIRF7379Q
HEXFET® Power MOSFET
Features
l
l
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Advanced Planar Technology
Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free, RoHS Compliant
S1
N-CHANNEL MOSFET
1
8
N-Ch
P-Ch
V(BR)DSS
30V
-30V
RDS(on) typ.
0.038Ω 0.070Ω
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
max. 0.045Ω 0.090Ω
P-CHANNEL MOSFET
Top View
Description
Specifically designed for Automotive applications, these
HEXFET® Power MOSFET's in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a 150°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other
applications.
The efficient SO-8 package provides enhanced thermal
characteristics and dual MOSFET die capability making it ideal
in a variety of power applications. This dual, surface mount
SO-8 can dramatically reduce board space and is also available
in Tape & Reel.
ID
5.8A
-4.3A
SO-8
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Drain-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
c
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
d
Max.
Units
N-Channel
P-Channel
30
5.8
4.6
46
-30
-4.3
-3.4
-34
2.5
0.02
± 20
5.0
V
A
W
-5.0
-55 to + 150
V
V/ns
°C
Thermal Resistance
RθJA
Junction-to-Ambient
f
Parameter
Typ.
Max.
Units
–––
50
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
08/24/11
AUIRF7379Q
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
RDS(on)
Static Drain-to-Source On-Resistance
P-Ch
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
Typ. Max. Units
30
-30
–––
–––
–––
–––
–––
–––
1.0
-1.0
5.2
2.5
–––
–––
–––
–––
–––
–––
–––
0.032
-0.037
0.038
0.055
0.070
0.130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.045
0.075
0.090
0.180
3.0
-3.0
–––
–––
1.0
-1.0
25
-25
± 100
V
V/°C
Ω
V
S
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS = 0V, ID = -250μA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 4.9A
VGS = -10V, ID = -4.3A
VGS = -4.5V, ID = -3.7A
VDS = VGS, ID = 250μA
VDS = VGS, ID = -250μA
VDS = 15V, ID = 2.4A
VDS = -24V, ID = -1.8A
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VDS = -24V, VGS = 0V, TJ = 125°C
VGS = ± 20V
e
e
e
e
e
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
Parameter
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
LD
LS
Internal Drain Inductance
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
–––
–––
–––
6.8
11
21
17
22
25
7.7
18
4.0
6.0
25
25
2.9
2.9
7.9
9.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
520
440
–––
180
200
72
–––
Conditions
N-Channel
ID = 2.4A VDS = 24V, VGS =10V
nC
e
P-Channel
ID = -1.8A VDS = -24V, VGS =-10V
ns
nH
pF
–––
N-Channel
VDD = 15V, ID=2.4A, RG = 6.0Ω
RD = 6.2Ω
P-Channel
VDD = -15V, ID=-1.8A, RG = 6.0Ω
RD = 8.2Ω
e
Between lead, 6mm (0.25in.) from package
and center of die contact
N-Channel
VGS = 0V, VDS = 25V, f =1.0Mhz
P-Channel
VGS = 0V, VDS = -25V, f =1.0Mhz
93
Diode Characteristics
Parameter
IS
ISM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Min.
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
–––
47
53
56
66
3.1
-3.1
46
-34
1.0
-1.0
71
80
84
99
Conditions
A
V
ns
nC
e
e
TJ = 25°C, IS = 1.8A, VGS = 0V
TJ = 25°C, IS = -1.8A, VGS = 0V
N-Channel
TJ = 25°C, IF = 2.4A di/dt = 100A/μs
P-Channel
TJ = 25°C, IF = -1.8A di/dt = 100A/μs
e
Notes through are on page 10
2
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AUIRF7379Q
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
SO-8
MSL1
†††
Machine Model
P Ch: Class M2(+/- 150V )
N Ch: Class M2(+/- 150V )
(per AEC-Q101-002)
†††
ESD
RoHS Compliant
†††
Human Body Model
N Ch : Class H1A(+/- 500V )
P Ch: Class H0(+/- 250V )
(per AEC-Q101-001)
Charged Device
Model
N Ch: Class C5(+/- 2000V )
P Ch: Class C5(+/- 2000V )
(per AEC-Q101-005)
†††
†††
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
††
†††
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage
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†††
3
AUIRF7379Q
1000
N-Channel
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20μs PULSE WIDTH
TJ = 25°C
1
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
1
10
A
100
4.5V
10
1
0.1
100
VDS , Drain-to-Source Voltage (V)
1
10
100
A
VDS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
TJ = 25°C
TJ = 150°C
VDS = 15V
20μs PULSE WIDTH
10
4
5
6
7
8
9
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
20μs PULSE WIDTH
TJ = 150°C
10
A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
A
2.5
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
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AUIRF7379Q
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
I D = 4.0A
1.5
1.0
0.5
VGS = 10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R DS (on), Drain-to-Source On Resistance ( Ω )
N-Channel
0.20
0.16
0.12
VGS = 4.5V
0.08
VGS = 10V
0.04
0.00
2
4
8
10
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 5. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
6
I D , Drain Current (A)
TJ , Junction Temperature (°C)
0.08
0.07
0.06
0.05
ID = 5.8A
0.04
0.03
0
4
8
12
16
VGS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
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5
N-Channel
AUIRF7379Q
1000
V GS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
I D = 2.4A
VDS = 24V
16
Ciss
600
12
Coss
400
Crss
200
0
1
10
100
A
8
4
FOR TEST CIRCUIT
SEE FIGURE 11
0
0
VDS , Drain-to-Source Voltage (V)
5
10
15
20
25
A
Q G , Total Gate Charge (nC)
Fig 8. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
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AUIRF7379Q
P-Channel
100
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
-I D , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
-4.5V
20μs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
10
-4.5V
1
0.1
100
10
A
100
Fig 12. Typical Output Characteristics
Fig 11. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
100
-ID , Drain-to-Source Current (A)
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
VDS = -15V
20μs PULSE WIDTH
1
4
5
6
7
8
9
-V GS , Gate-to-Source Voltage (V)
Fig 13. Typical Transfer Characteristics
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20μs PULSE WIDTH
TJ = 150°C
10
A
10
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.0
0.3
0.6
0.9
1.2
A
1.5
-VSD , Source-to-Drain Voltage (V)
Fig 14. Typical Source-Drain Diode
Forward Voltage
7
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
R DS (on), Drain-to-Source On Resistance ( Ω )
P-Channel
AUIRF7379Q
I D = -3.0A
1.5
1.0
0.5
VGS = -10V
0.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
0.50
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
2
6
8
10
12
14
Fig 16. Typical On-Resistance Vs. Drain
Current
Fig 15. Normalized On-Resistance
Vs. Temperature
R DS (on), Drain-to-Source On Resistance ( Ω )
4
-ID , Drain Current (A)
TJ , Junction Temperature (°C)
0.16
0.14
0.12
0.10
ID = -4.3A
0.08
0.06
0
4
8
12
16
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
8
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AUIRF7379Q
P-Channel
1000
600
-VGS , Gate-to-Source Voltage (V)
800
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
Coss
400
Crss
200
0
1
10
100
A
ID = -3.0A
VDS = -24V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 22
0
0
5
10
15
20
A
25
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 19. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 18. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
AUIRF7379Q
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BASIC
1.27 BASIC
e1
6X
e
e1
8X b
0.25 [.010]
A
A1
MILLIMETERS
MAX
A
5
INCHES
MIN
MAX
.025 BASIC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
C A B
8X L
8X c
7
F OOTPRINT
NOT ES :
1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRF7379Q
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 10 )
N-Channel ISD ≤ 2.4A, di/dt ≤ 73A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.8A, di/dt ≤ 90A/μs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
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11
AUIRF7379Q
Ordering Information
Base part
AUIRF7379Q
12
Package Type
SO-8
Standard Pack
Form
Tube
Tape and Reel
Complete Part Number
Quantity
95
4000
AUIRF7379Q
AUIRF7379QTR
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AUIRF7379Q
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
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and applications using IR components. To minimize the risks with customer products and applications, customers should
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