Ordering number : EN694H 2SB815/2SD1048 Bipolar Transistor http://onsemi.com (–)15V, (–)0.7A, Low VCE(sat), (PNP)NPN Single CP Features • • Ultrasmall package allows miniaturization in end products Large current capacity (IC=0.7A) and low-saturation voltage Specifications ( ): 2SB815 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Conditions Ratings (--)20 V (--)15 V VEBO IC (--)5 V (--)0.7 A ICP PC Collector Dissipation Unit VCBO VCEO Junction Temperature Tj Storage Temperature Tstg (--)1.5 200 A mW 125 °C --55 to +125 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7013A-009 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.1 1.5 3 0.95 2 Packing Type: TB TB 2SB815 X– R A N K LOT No. R A N K LOT No. B• LOT No. CP Marking LOT No. 1 : Base 2 : Emitter 3 : Collector 0.3 2SB815-6-TB-E 2SB815-7-TB-E 2SD1048-6-TB-E 2SD1048-7-TB-E 0.4 1.1 1 0.05 0.5 2.5 0.5 2.9 2SD1048 Electrical Connection 3 1 2SB815 3 1 2 2SD1048 2 Semiconductor Components Industries, LLC, 2013 November, 2013 N1313 TKIM/O1012 TKIM/41301 TSIM/91098 HA (KT)/8258MO/4017 KI/2173 KI, TS No.694-1/4 2SB815 / 2SD1048 Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO VCB=(--)15V, IE=0A VEB=(--)4V, IC=0A hFE1 VCE=(--)2V, IC=(--)50mA VCE=(--)2V, IC=(--)500mA hFE2 Gain-Bandwidth Product Output Capacitance Collector to Emitter Saturation Voltage Conditions fT Cob Ratings min typ 200* max Unit (--)0.1 µA (--)0.1 µA 600* 80 VCE=(--)10V, IC=(--)50mA 250 (13)8 VCE(sat)1 VCB=(--)10V, f=1MHz IC=(--)5mA, IB=(--)0.5mA MHz (--15)10 (--35)25 mV VCE(sat)2 IC=(--)100mA, IB=(--)10mA (--60)30 (--120)80 mV pF * : The 2SB815/2SD1048 are classified by 50mA hFE as follows : Rank hFE 6 200 to 400 7 300 to 600 Ordering Information Package Shipping 2SB815-6-TB-E Device CP 3,000pcs./reel 2SB815-7-TB-E CP 3,000pcs./reel 2SD1048-6-TB-E CP 3,000pcs./reel 2SD1048-7-TB-E CP 3,000pcs./reel memo Pb Free No.694-2/4 2SB815 / 2SD1048 IC -- VCE --800 A 0m --3 mA --10 --500 --6mA --400 --300 --2mA --1mA --200 600 A 6m 4mA 500 2mA 400 300 1mA 200 100 IB=0mA 0 0 --0.1 --0.2 --0.3 --0.4 Collector to Emitter Voltage, VCE -- V 0 0.6 0.8 1.0 Base to Emitter Voltage, VBE -- V 5 100 7 5 3 (For PNP, minus sign is omitted.) 2 3 5 10 2 3 5 100 7 5 3 2 (For PNP, minus sign is omitted.) 2 3 5 7 2 10 3 5 7 100 ITR08399 Cob -- VCB 2SB 2 815 2SD 10 1048 7 5 3 2 (For PNP, minus sign is omitted.) 1.0 2 3 100 5 1000 Collector Current, IC -- mA 2 3 5 5 7 1.0 2 3 5 7 2 10 Collector to Base Voltage, VCB -- V ITR08400 VCE(sat) -- IC 10000 1048 2SD f=1MHz 2 10 1.0 815 2SB 2 5 Output Capacitance, Cob -- pF 2SB815 2 3 3 2SD1048 3 5 Collector Current, IC -- mA VCE=2V 7 VCE=10V ITR08398 hFE -- IC 1000 0.5 ITR08397 f T -- IC 10 1.0 0 0.4 0.4 Collector to Emitter Voltage, VCE -- V Gain-Bandwidth Product, f T -- MHz 2SD1048 2SB815 20 0.2 0.3 7 40 0 0.2 1000 80 60 0.1 ITR08396 VCE=5V (For PNP, minus sign is omitted.) IB=0mA 0 --0.5 IB -- VBE 100 Base Current, IB -- µA 50m A 10 mA Collector Current, IC -- mA --600 --100 DC Current Gain, hFE 2SD1048 700 --5 0m A Collector Current, IC -- mA --700 3 5 ITR08401 PC -- Ta 300 IC / IB=10 5 Collector Dissipation, PC -- mW Collector to Emitter Saturation Voltage, VCE(sat) -- mV IC -- VCE 800 2SB815 3 2 1000 5 3 2 100 815 2SB 5 3 2 8 104 2SD 250 200 150 100 50 10 5 1.0 (For PNP, minus sign is omitted.) 2 3 5 10 2 3 5 100 Collector Current, IC -- mA 2 3 5 1000 ITR08402 0 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 ITR08403 No.694-3/4 2SB815 / 2SD1048 Outline Drawing Land Pattern Example 2SB815-6-TB-E, 2SB815-7-TB-E, 2SD1048-6-TB-E, 2SD1048-7-TB-E Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No.694-4/4