Ordering number : EN1784C 2SD1618 Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP http://onsemi.com Features • • Low collector-to-emitter saturation voltage Very small size making it easy to provide highdensity, small-sized hybrid IC’s Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO 20 V 15 V 5 V Collector Current VEBO IC 0.7 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) 1.5 A 500 mW 1.3 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel 1.6 1 2 Packing Type: TD 4.0 1.0 2.5 1.5 2SD1618S-TD-E 2SD1618T-TD-E TD Marking LOT No. 4.5 DA Top View RANK 3 0.4 0.4 0.5 1.5 Electrical Connection 3.0 2 1 0.75 3 1 : Base 2 : Collector 3 : Emitter Bottom View PCP Semiconductor Components Industries, LLC, 2013 September, 2013 80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6 2SD1618 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Conditions ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=50mA VCE=2V, IC=500mA hFE2 Gain-Bandwidth Product Ratings min typ max 140* Unit 0.1 μA 0.1 μA 560* 60 fT VCE(sat)1 VCE=10V, IC=50mA 250 IC=5mA, IB=0.5mA 10 25 mV VCE(sat)2 IC=100mA, IB=10mA 30 80 mV VBE(sat) V(BR)CBO IC=100mA, IB=10mA 0.8 1.2 V IC=10μA, IE=0A 20 V IC=1mA, RBE=∞ 15 V Emitter-to-Base Breakdown Voltage V(BR)CEO V(BR)EBO IE=10μA, IC=0A 5 Output Capacitance Cob VCB=10V, f=1MHz Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage MHz V 8 pF * : The 2SD1618 is classified by 50mA hFE as follows : Rank S T U hFE 140 to 280 200 to 400 280 to 560 Ordering Information Package Shipping 2SD1618S-TD-E Device PCP 1,000pcs./reel 2SD1618T-TD-E PCP 1,000pcs./reel memo Pb Free No.1784-2/6 2SD1618 IC -- VCE 10 50m 6 mA 80 4mA 600 Base Current, IB -- μA Collector Current, IC -- mA 700 IB -- VBE 100 VCE=5V mA A 800 500 2mA 400 1mA 300 200 60 40 20 100 IB=0 0 0 0.1 0.2 0.3 0 0.4 Collector-to-Emitter Voltage, VCE -- V 3 DC Current Gain, hFE 3 2 100 7 5 7 5 3 2 7 2 10 3 5 Collector Current, IC -- mA 10 1.0 7 100 ITR08843 Cob -- VCB 5 VCE=2V 100 2 5 2 3 5 2 3 10 5 100 2 3 5 1000 2 3 5 ITR08844 Collector Current, IC -- mA VCE(sat) -- IC 10000 f=1MHz IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 5 3 2 10 7 5 1.0 ITR08842 2 3 3 0.8 7 5 2 0.6 hFE -- IC 1000 5 10 1.0 0.4 Base-to-Emitter Voltage, VBE -- V VCE=10V 7 0.2 ITR08841 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 0 0.5 3 2 1000 5 3 2 100 5 3 2 10 3 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 5 1.0 3 5 2 10 3 5 100 2 3 5 1000 ITR08846 ASO 5 Mounted on a ceramic board (250mm2✕0.8mm) 3 1.4 M 1.2 ou nt ed 1.0 on ac 0.8 er am ic 0.6 No h 0.5 bo ar d( 25 eat s 0.4 ink 0m m2 ✕0 .8 0.2 Collector Current, IC -- A 2 1.3 m m ICP 1.0 7 5 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 s DC Ta op =2 era 5° tio C n 3 2 0.1 5 Single pulse 3 20 0m 7 ) 0 0 10 IC s 1m ms 10 Collector Dissipation, PC -- W 3 Collector Current, IC -- mA PC -- Ta 1.6 2 ITR08845 160 ITR08847 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 3 5 ITR08848 No.1784-3/6 2SD1618 Bag Packing Specification 2SD1618S-TD-E, 2SD1618T-TD-E No.1784-4/6 2SD1618 Outline Drawing 2SD1618S-TD-E, 2SD1618T-TD-E Land Pattern Example Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.1784-5/6 2SD1618 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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