Ordering number : EN7504A 15C01C Bipolar Transistor http://onsemi.com 15V, 0.7A, Low VCE(sat) NPN Single CP Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Unit 20 V 15 V 5 700 Mounted on a glass epoxy board (20×30×1.6mm) V mA 1.4 A 300 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7013A-009 • Package : CP • JEITA, JEDEC : SC-59, TO-236, SOT-23, TO-236AB • Minimum Packing Quantity : 3,000 pcs./reel 0.1 15C01C-TB-E Packing Type: TB Marking 1.5 3 1.1 0.4 1 : Base 2 : Emitter 3 : Collector CP 0.3 YP TB 0.05 0.95 2 LOT No. 1 LOT No. 0.5 2.5 0.5 2.9 Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 92612 TKIM/O3003 TSIM TA-3682 No.7504-1/6 15C01C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=10mA VCE=2V, IC=50mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 300 0.1 μA 0.1 μA 800 330 MHz 3.2 IC=200mA, IB=10mA pF 150 300 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 IC=1mA, RBE=∞ 15 V V V(BR)EBO ton IE=10μA, IC=0A 5 V tstg tf See specified Test Circuit. 30 ns 77 ns 40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 470μF + 220μF VBE= --5V VCC=5V IC=20IB1= --20IB2=500mA Ordering Information Device Package Shipping memo CP 3,000pcs./reel Pb Free 15C01C-TB-E IC -- VCE mA 200 0.9 0.8m A 120 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 600 500 400 5°C 25°C --25 °C 0.5mA 300 Ta= 7 0.6mA Collector Current, IC -- mA 700 160 140 VCE=2V 0.7mA 1.0mA Collector Current, IC -- mA 180 IC -- VBE 800 200 100 20 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 2.0 IT05490 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05491 No.7504-2/6 15C01C hFE -- IC 1000 DC Current Gain, hFE Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C Ta=75°C 3 --25°C 2 100 7 5 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 3 2 °C 75 5°C --2 5°C = Ta 2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 3 2 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V 5 7 100 2 5 7 1000 IT05493 2 Ta= --25°C 1000 7 75°C 5 25°C 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05495 Collector Current, IC -- mA fT -- IC VCE=2V 5 3 2 100 7 5 1.0 3 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05496 Collector Current, IC -- mA PC -- Ta OUT 1kΩ 2 IB 3 2 1.0 7 5 3 300 M ou nt 250 ed on ag las se 200 po xy 150 bo ar d( 100 20 ✕ 30 ✕ 1. 50 2 0.1 0.1 3 3 Collector Dissipation, PC -- mW ON-resistance, Ron -- Ω 3 IC / IB=20 350 1kΩ 10 7 5 2 VBE(sat) -- IC IT05497 IN 3 5 7 10 5 Ron -- IB f=1MHz 3 Collector Current, IC -- mA Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 7 7 100 7 5 2 f=1MHz 2 °C 25 3 Cob -- VCB 1.0 0.1 = Ta 5 5 7 1000 IT05494 Collector Current, IC -- mA 10 °C 75 C 5° --2 7 7 5 5 100 10 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 7 2 10000 IC / IB=50 100 3 IT05492 VCE(sat) -- IC 1000 5 5 7 1000 Collector Current, IC -- mA IC / IB=20 7 7 5 VCE(sat) -- IC 1000 VCE=2V 6m m ) 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05499 No.7504-3/6 15C01C Embossed Taping Specification 15C01C-TB-E No.7504-4/6 15C01C Outline Drawing 15C01C-TB-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.0 0.8 0.95 0.95 No.7504-5/6 15C01C ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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