Ordering number : EN7505A 15C01M Bipolar Transistor http://onsemi.com 15V, 0.7A, Low VCE(sat) NPN Single MCP Applications • Low-frequency Amplifier, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Unit 20 V 15 V 5 700 Mounted on a glass epoxy board (20×30×1.6mm) V mA 1.4 A 300 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7023A-009 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 15C01M-TL-E 0.2 0.15 3 0.9 Packing Type: TL Marking 1.25 0 to 0.08 LOT No. 1 YP 2 0.65 LOT No. TL 0.3 0.3 0.425 2.1 0.425 2.0 1 : Base 2 : Emitter 3 : Collector MCP Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 92612 TKIM/O3003 TSIM TA-3683 No.7505-1/6 15C01M Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A Gain-Bandwidth Product hFE fT VCE=2V, IC=10mA VCE=2V, IC=50mA Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=200mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 300 0.1 μA 0.1 μA 800 330 MHz 3.2 IC=200mA, IB=10mA pF 150 300 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 IC=1mA, RBE=∞ 15 V V V(BR)EBO ton IE=10μA, IC=0A 5 V tstg tf See specified Test Circuit. 30 ns 77 ns 40 ns Ordering Information Device Package Shipping memo MCP 3,000pcs./reel Pb Free 15C01M-TL-E IC -- VCE mA 200 0.9 0 0.4mA 100 0.3mA 80 0.2mA 60 0.1mA 40 400 300 200 100 20 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 0 3 Ta=75°C --25°C 2 100 7 5 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05492 0.6 0.8 1.0 1.2 IT05491 VCE(sat) -- IC 1000 IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 25°C 0.4 Base-to-Emitter Voltage, VBE -- V VCE=2V 5 0.2 IT05490 7 3 1.0 0 2.0 hFE -- IC 1000 DC Current Gain, hFE 500 5°C 25°C --25 °C 120 600 Ta= 7 0.5mA Collector Current, IC -- mA 700 0.6mA 160 140 VCE=2V 0.7mA 1.0mA Collector Current, IC -- mA 180 IC -- VBE 800 .8mA 5 3 2 100 °C 75 C 5° --2 7 = Ta 5 °C 25 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05493 No.7505-2/6 15C01M VCE(sat) -- IC 1000 5 3 2 °C 75 5°C --2 5°C 100 = Ta 7 5 2 3 2 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 3 5 7 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V ON-resistance, Ron -- Ω 3 2 2 3 5 7 10 2 3 5 7 100 2 1kΩ 2 IB 3 2 1.0 7 5 3 5 7 1000 IT05495 fT -- IC VCE=2V 5 3 2 100 7 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05496 Collector Current, IC -- mA PC -- Ta 300 M ou nt 250 ed on ag las se 200 po xy 150 bo ar d( 100 20 ✕ 30 ✕ 1. 50 2 0.1 0.1 3 OUT IN 10 7 5 25°C 350 1kΩ 3 75°C 5 IT05497 Ron -- IB f=1MHz 7 5 1.0 3 Collector Dissipation, PC -- mW 100 7 5 Ta= --25°C 1000 7 7 2 2 Collector Current, IC -- mA f=1MHz 1.0 0.1 3 IT05494 Cob -- VCB 10 5 100 1.0 5 7 1000 Collector Current, IC -- mA IC / IB=20 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 VBE(sat) -- IC 10000 IC / IB=50 6m m ) 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06067 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05499 No.7505-3/6 15C01M Embossed Taping Specification 15C01M-TL-E No.7505-4/6 15C01M Outline Drawing 15C01M-TL-E Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.7505-5/6 15C01M ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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