5LN01SS-TL-H

Ordering number : EN6560C
5LN01SS
N-Channel Small Signal MOSFET
http://onsemi.com
50V, 0.1A, 7.8Ω, Single SSFP
Features
•
•
•
Low ON-resistance
Ultrahigh-speed switching
1.5V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate to Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Unit
50
V
0.1
A
0.4
A
0.15
W
Channel Temperature
PD
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Allowable Power Dissipation
PW≤10μs, duty cycle≤1%
V
±10
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Ordering & Package Information
unit : mm (typ)
7029A-003
5LN01SS-TL-E
5LN01SS-TL-H
1.4
0.1
3
0.8
0 to 0.02
0.3
1.4
0.3
0.25
1
2
Package
Shipping
memo
5LN01SS-TL-E
SSFP
SC-81
8,000pcs./reel
Pb-Free
5LN01SS-TL-H
SSFP
SC-81
8,000pcs./reel
Pb-Free
and
Halogen Free
Packing Type: TL
0.07
0.6
TL
1
2
1 : Gate
2 : Source
3 : Drain
YB
LOT No.
0.2
Marking
LOT No.
0.45
Device
Electrical Connection
0.07
3
3
SSFP
1
2
Semiconductor Components Industries, LLC, 2013
July, 2013
71713 TKIM TC-00002959/62712 TKIM/31506PE MSIM TB-00002117/ No.6560-1/6
82200 TSIM TA-2065
5LN01SS
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain to Source Breakdown Voltage
V(BR)DSS
IDSS
IGSS
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
VGS(off)
| yfs |
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Conditions
ID=1mA, VGS=0V
VDS=50V, VGS=0V
Ratings
min
typ
Unit
max
50
VGS=±8V, VDS=0V
VDS=10V, ID=100μA
0.4
VDS=10V, ID=50mA
0.13
V
1
μA
±10
μA
1.3
0.18
V
S
RDS(on)1
ID=50mA, VGS=4V
6
7.8
Ω
RDS(on)2
ID=30mA, VGS=2.5V
7.1
9.9
Ω
RDS(on)3
ID=10mA, VGS=1.5V
10
20
Ciss
Ω
6.6
pF
Output Capacitance
Coss
4.7
pF
Reverse Transfer Capacitance
Crss
1.7
pF
Turn-ON Delay Time
td(on)
tr
18
ns
42
ns
190
ns
Rise Time
Turn-OFF Delay Time
Fall Time
td(off)
tf
Total Gate Charge
Qg
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=10V, VGS=10V, ID=100mA
105
ns
1.57
nC
0.20
nC
0.32
IS=100mA, VGS=0V
0.85
nC
1.2
V
Switching Time Test Circuit
4V
0V
VDD=25V
VIN
ID=50mA
RL=500Ω
VOUT
VIN
PW=10μs
D.C.≤1%
D
G
5LN01SS
P.G
50Ω
S
No.6560-2/6
5LN01SS
ID -- VDS
VDS=10V
6.0
V
VGS=1.5V
0.05
0.04
0.03
0.12
C
0.10
0.08
0.06
0.02
0.04
0.01
0.02
0
0
0
0.2
0.4
0.6
0.8
1.0
Drain to Source Voltage, VDS -- V
0
1.5
2.0
2.5
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
10
9
50mA
ID=30mA
6
5
4
3.0
IT00055
RDS(on) -- ID
VGS=4V
7
11
7
1.0
100
Ta=25°C
8
0.5
Gate to Source Voltage, VGS -- V
IT00054
RDS(on) -- VGS
12
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
0.14
75°
C
Drain Current, ID -- A
0.16
0.07
0.06
Ta=
--25°
C
0.18
25 °
5V
V
2.0
2.
4.0V
0.08
Drain Current, ID -- A
3 .0
3.5V
0.09
ID -- VGS
0.20
V
0.10
5
3
2
10
Ta=75°C
25°C
--25°C
7
5
3
2
3
1.0
0.01
2
1
2
3
4
5
6
7
8
Gate to Source Voltage, VGS -- V
2
Ta=75°C
--25°C
5
25°C
3
2
1.0
0.01
2
3
5
7
2
0.1
Drain Current, ID -- A
8
0V
=
ID
4.
S=
, VG
mA
50
I D=
6
4
2
0
--60
--40
--20
0
20
40
60
80
3
2
Ta=75°C
10
--25°C
7
25°C
5
3
2
2
3
100
Ambient Temperature, Ta -- °C
120
140
160
IT00060
5
7
0.01
Drain Current, ID -- A
Forward Transfer Admittance, | yfs | -- S
.5V
3
IT00057
VGS=1.5V
2
3
IT00059
| yfs | -- ID
1.0
2
S=
, VG
A
30m
2
0.1
5
1.0
0.001
3
12
10
7
RDS(on) -- ID
IT00058
RDS(on) -- Ta
14
5
7
3
7
3
Drain Current, ID -- A
100
5
10
2
IT00056
VGS=2.5V
7
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
10
RDS(on) -- ID
100
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
9
Static Drain to Source
On-State Resistance, RDS(on) -- Ω
0
VDS=10V
7
5
3
5 °C
2
Ta= --
2
75°C
0.1
25°C
7
5
3
2
0.01
0.01
2
3
5
7
0.1
Drain Current, ID -- A
2
3
IT00061
No.6560-3/6
5LN01SS
IS -- VSD
3
Switching Time, SW Time -- ns
25°
C
3
--25
°C
5°C
5
Ta=
7
Source Current, IS -- A
7
2
0.01
0.5
0.6
0.7
0.8
0.9
1.0
Diode Forward Voltage, VSD -- V
tf
100
7
2
10
Ciss
5
Coss
3
2
Crss
3
5
10
15
20
25
30
td(on)
2
2
3
5
7
10
0.1
IT00063
VGS -- Qg
VDS=10V
ID=100mA
8
7
6
5
4
3
2
1
1.0
0
tr
5
Drain Current, ID -- A
Gate to Source Voltage, VGS -- V
Ciss, Coss, Crss -- pF
3
7
td(off)
2
9
5
35
40
Drain to Source Voltage, VDS -- V
45
50
IT00064
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Total Gate Charge, Qg -- nC
1.4
1.6
1.8
IT00065
PD -- Ta
0.2
Allowable Power Dissipation, PD -- W
3
IT00062
f=1MHz
7
5
10
0.01
1.1
Ciss, Coss, Crss -- VDS
100
VDD=25V
VGS=4V
7
2
0.1
SW Time -- ID
1000
VGS=0V
0.15
0.1
0.05
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT02007
No.6560-4/6
5LN01SS
Outline Drawing
5LN01SS-TL-E, 5LN01SS-TL-H
Land Pattern Example
Mass (g) Unit
0.0018 mm
* For reference
Unit: mm
1.2
0.5
0.5
0.45
0.45
0.45 0.45
No.6560-5/6
5LN01SS
Note on usage : Since the 5LN01SS is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.6560-6/6