Ordering number : EN8223A CPH5541 Bipolar Transistor http://onsemi.com (–)30V, (–)3A, Low VCE(sat) Complementary Dual CPH5 Applications • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Unit (--30)40 V (--)30 V (--)5 V (--)700 mA PW≤10μs (--)3 A Mounted on a ceramic board (600mm2×0.8mm) 0.6 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-006 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 4 CPH5541-TL-E 0.15 2.9 5 3 Packing Type : TL Marking 0.9 1 0.95 2 LOT No. EJ 0.05 1.6 0.2 0.6 2.8 0.2 0.6 Package Dimensions TL 0.4 1 : Collector1 2 : Collector2 3 : Base2 4 : Emitter Common 5 : Base1 Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 September, 2013 2 62712 TKIM/21005EA TSIM TB-00001169 No.8223-1/8 CPH5541 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A VCE=(--)2V, IC=(--10)50mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)200mA, IB=(--)10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings min typ max (200)300 VCE=(--)2V, IC=(--)50mA (--)100 nA (--)100 nA (500)800 (520)540 MHz (4.7)3.3 IC=(--)200mA, IB=(--)10mA Unit pF (--110)85 (--220)190 (--)0.9 (--)1.2 (--30)40 mV V V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A V IC=(--)1mA, RBE=∞ (--)30 V V(BR)EBO ton IE=(--)10μA, IC=0A (--)5 V tstg tf See specified Test Circuit. 35 ns (125)255 ns (25)40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 220μF VBE= --5V + 470μF VCC=12V 20IB1= --20IB2=IC=300mA For PNP, minus sign is omitted. Ordering Information Device CPH5541-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No.8223-2/8 CPH5541 [PNP] --400 600 --3mA --2mA --300 IC -- VCE 700 --1mA --200 --500μA 500 15m A A --20m A --15m A --10m A --7m --5mA 30m 20m A A --500 0 --3 mA --25 Collector Current, IC -- mA ---50 mA 40mA --600 Collector Current, IC -- mA mA [NPN] 7mA A 10m 5mA 3mA 2mA 400 1mA 50m A IC -- VCE --700 300 400μA 200 200μA 100 --100 0 0 IB=0mA 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IC -- VBE --800 IB=0mA 100 IT05049 [PNP] 200 300 400 500 600 700 IT05082 IC -- VBE [NPN] 800 VCE=2V --400 --300 --200 500 400 300 --25°C --500 600 Ta=7 5°C 25°C Collector Current, IC -- mA --600 Ta=7 5°C 25°C --25°C Collector Current, IC -- mA 700 200 100 --100 0 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 [PNP] DC Current Gain, hFE --25°C 2 100 0.8 1.0 IT05083 [NPN] VCE=2V Ta=75°C 7 3 0.6 hFE -- IC 1000 Ta=75°C 25°C 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE= --2V 7 0.2 IT05050 hFE -- IC 1000 DC Current Gain, hFE 1000 Collector-to-Emitter Voltage, VCE -- mV VCE= --2V --700 900 800 25°C 5 --25°C 3 2 7 5 3 --1.0 2 3 5 7 --10 3 2 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC [PNP] IC / IB=20 7 5 3 2 --100 7 5°C 5 7 Ta= 5°C --2 5°C 3 2 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05054 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV --1000 100 1.0 5 7--1000 IT05051 VCE(sat) -- IC 1000 7 5 5 7 1000 IT05084 [NPN] IC / IB=20 3 2 100 7 5 25 °C 5°C 3 2 7 Ta= 5°C --2 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05085 No.8223-3/8 CPH5541 VCE(sat) -- IC 3 [PNP] --1000 7 5 3 2 5°C --100 7 7 Ta= C 5° --2 5 3 C 25° 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 VBE(sat) -- IC --10 [PNP] 2 Ta= --25°C 75°C 5 25°C 3 2 --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 10 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 2 5 7 --10 2 2 3 5 7 100 2 IT05053 f T -- IC [PNP] [NPN] IC / IB=20 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 5 7 10 3 2 3 5 7 100 2 [NPN] f=1MHz 7 5 3 2 2 3 5 7 10 2 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05052 3 Collector-to-Base Voltage, VCB -- V fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, f T -- MHz 5 5 7 1000 IT05087 3 Cob -- VCB 5 IT05088 [NPN] VCE=10V VCE= --10V 7 5 7 1000 3 IT05086 VBE(sat) -- IC 1.0 1.0 5 3 Collector-to-Base Voltage, VCB -- V 1000 5 7 10 3 10 5 3 2 [PNP] 7 2 3 Collector Current, IC -- mA f=1MHz 0.1 --1.0 °C 75 5°C --2 = Ta 2 0.1 1.0 5 7--1000 IT05056 Collector Current, IC -- mA °C 7 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 7 25 100 7 5 --1.0 3 2 Collector Current, IC -- mA IC / IB=20 7 5 10 1.0 5 7--1000 IT05055 Collector Current, IC -- mA [NPN] IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC 1000 IC / IB=50 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05089 No.8223-4/8 CPH5541 100 7 5 Ron -- IB f=1MHz 1kΩ IB 10 7 5 3 2 1.0 7 5 3 OUT IN 1kΩ 5 2 [NPN] 1kΩ f=1MHz 7 OUT ON Resistance, Ron -- Ω ON Resistance, Ron -- Ω 10 IN 3 Ron -- IB [PNP] 1kΩ 3 IB 2 1.0 7 5 3 2 2 0.1 --0.1 2 3 5 7 2 --1.0 3 5 Base Current, IB -- mA 3 ASO [PNP / NPN] 10 s 0μ 1.0 0m s op 1m DC 3 10 s era 2 s 0μ IC=0.7A ms 50 7 5 10 tio n 0.1 7 5 3 2 Ta=25°C Single pulse Mounted on a ceramic board (600mm2×0.8mm) For PNP, minus sign is omitted 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 1.0 3 5 Base Current, IB -- mA PC -- Ta 700 ICP=3A 2 Collector Current, IC -- A --10 IT06403 Collector Dissipation, PC -- mW 5 0.1 0.1 7 7 10 IT06793 [PNP / NPN] 600 M ou nt 500 ed on ac er 400 am ic bo ar 300 d (6 00 m 200 m2 ×0 .8 m m ) 100 0 2 Collector-to-Emitter Voltage, VCE -- V 3 5 IT08992 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08993 No.8223-5/8 CPH5541 Embossed Taping Specification CPH5541-TL-E No.8223-6/8 CPH5541 Outline Drawing CPH5541-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.8223-7/8 CPH5541 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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