Ordering number : ENA0859A CPH5524 Bipolar Transistor http://onsemi.com (–)50V, (–)6A, Low VCE(sat) Complementary Dual CPH5 Applications • Relay drivers, lamp drivers, motor drivers, IGBT gate drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density mounting Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height) Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Total Power Dissipation Ratings Unit (--50)100 V (--)50 V VEBO IC (--)6 V (--)3 A ICP IB PC Base Current Conditions VCBO VCEO (--)6 Junction Temperature PT Tj Storage Temperature Tstg A (--)600 mA Mounted on a ceramic board (600mm2×0.8mm) 1unit 0.9 W Mounted on a ceramic board (600mm2×0.8mm) 1.2 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Product & Package Information unit : mm (typ) 7017A-009 • Package : CPH5 • JEITA, JEDEC : SC-74A, SOT-25 • Minimum Packing Quantity : 3,000 pcs./reel 5 4 CPH5524-TL-E 0.15 2.9 3 Packing Type : TL Marking LOT No. 3Y 0.05 1.6 2.8 0.2 0.6 Package Dimensions 0.9 0.2 0.6 TL 1 2 0.95 0.4 1 : Collector (NPN TR) 2 : Collector (PNP TR) 3 : Base (PNP TR) 4 : Emitter Common 5 : Base (NPN TR) Electrical Connection 5 4 3 CPH5 1 Semiconductor Components Industries, LLC, 2013 September, 2013 2 62012 TKIM/92607EA TIIM TC-00000913 No. A0859-1/8 CPH5524 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions ICBO IEBO VCB=(--)40V, IE=0A VEB=(--)4V, IC=0A Gain-Bandwidth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)500mA Output Capacitance Cob VCB=(--)10V, f=1MHz Emitter Cutoff Current DC Current Gain VCE(sat)1 Ratings min Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time μA (--)1 μA 560 (390)380 (--115) IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(--)100mA VBE(sat) V(BR)CBO IC=(--)2A, IB=(--)100mA tstg tf (--)1 MHz (24)13 VCE(sat)2 V(BR)CEO V(BR)EBO ton Unit max 200 Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage typ IC=(--)10μA, IE=0A IC=(--)1mA, RBE=∞ See specified Test Circuit. mV mV 90 130 (--240) (--650) mV 160 240 mV (--)0.88 (--)1.2 (--50)100 IE=(--)10μA, IC=0A pF (--230) V V (--)50 V (--)6 V (30)35 ns (230)300 ns (18)25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 100μF VBE= --5V + 470μF VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. Ordering Information Device CPH5524-TL-E Package Shipping memo CPH5 3,000pcs./reel Pb Free No. A0859-2/8 CPH5524 IC -- VCE mA --250 --4.5 mA mA --150 mA --100 --200 --4.0 --3.5 --50m --3.0 00mA [NPN] 80mA 60mA A --2.5 --20mA --2.0 --10mA --1.5 --5mA 4.0 40mA 3.5 3.0 20mA 2.5 10mA 2.0 5mA 1.5 1.0 --0.5 0.5 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 Collector-to-Emitter Voltage, VCE -- V IC -- VBE --3.0 IB=0mA 0 --2.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Collector-to-Emitter Voltage, VCE -- V IT07258 [PNP] VCE= --2V IC -- VBE 3.0 2.0 IT07259 [NPN] VCE=2V 2.5 Collector Current, IC -- A --2.5 --2.0 --1.5 --1.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 1 4.5 --1.0 --0.5 2.0 1.5 1.0 0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V IT04566 hFE -- IC 1000 [PNP] hFE -- IC 1000 VCE= --2V 7 1.2 IT04567 [NPN] VCE=2V 7 DC Current Gain, hFE Ta=75°C 5 DC Current Gain, hFE IC -- VCE 5.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A [PNP] Collector Current, IC -- A --5.0 25°C 3 --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A f T -- IC 3 2 100 7 5 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 3 2 3 5 IT04570 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A [PNP] VCE= --10V 5 2 2 IT04568 7 3 --0.01 7 0.01 5 f T -- IC 1000 3 5 IT04569 [NPN] VCE=10V 7 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 1000 3 5 3 2 100 7 5 3 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 IT04571 No. A0859-3/8 CPH5524 Cob -- VCB 100 [PNP] Cob -- VCB 100 f=1MHz [NPN] f=1MHz 7 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 5 3 2 5 3 2 10 7 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 --1000 7 5 3 2 5°C =7 Ta 5°C 25°C --2 3 2 --10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VCE(sat) -- IC [PNP] 2 --1000 7 5 3 2 C 75° Ta= 5°C --2 --100 7 5 3 C 25° 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A VBE(sat) -- IC Ta= --25°C 7 25°C 3 5 7 --0.1 75°C 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT04578 5 7 100 IT04573 [NPN] IC / IB=20 100 7 5 3 °C 25 2 2 3 5 7 0.1 2 3 5 7 1.0 2 VCE(sat) -- IC 3 5 7 10 IT04575 [NPN] IC / IB=50 3 2 100 7 C 5° =7 Ta C 5°C 25° --2 5 3 2 2 3 5 7 0.1 2 3 5 7 1.0 2 3 3 5 IT04577 VBE(sat) -- IC [PNP] --1.0 3 Collector Current, IC -- A IC / IB=50 2 2 2 10 0.01 5 7 --10 IT04576 2 3 --0.01 5 7 10 VCE(sat) -- IC 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 3 5 3 2 2 Collector Current, IC -- A IC / IB=50 --10 --0.01 5 7 1.0 3 10 0.01 5 7 --10 IT04574 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 2 Collector-to-Base Voltage, VCB -- V [PNP] IC / IB=20 3 --100 7 5 5 0.1 7 --100 IT04572 75 °C 5 Ta = 3 5° C 2 --2 10 --1.0 [NPN] IC / IB=50 2 1.0 Ta= --25°C 7 75°C 25°C 5 3 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT04579 No. A0859-4/8 CPH5524 10 1.0 7 5 0m ms 50 s DC 1m op er 3 2 0.1 7 5 3 2 0μ s 2 3 s ati on 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V [PNP / NPN] Mounted on a ceramic board (600mm2✕0.8mm) 1.2 Ta=25°C Single pulse For PNP minus sign is omitted Mounted on a ceramic board (600mm2✕0.8mm) 0.01 0.1 1.4 <50μs 10 IC=3A PC -- Ta [PNP / NPN] Collector Dissipation, PC -- W 3 2 ASO ICP=6A μs 100 Collector Current, IC -- A 10 7 5 1.0 0.9 To tal 0.8 1u 0.6 di nit ss ip ati on 0.4 0.2 0 5 7 100 IT12616 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12617 No. A0859-5/8 CPH5524 Embossed Taping Specification CPH5524-TL-E No. A0859-6/8 CPH5524 Outline Drawing CPH5524-TL-E Land Pattern Example Mass (g) Unit 0.02 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No. A0859-7/8 CPH5524 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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