Ordering number : EN8949A MCH6541 Bipolar Transistor http://onsemi.com (–)30V, (–)3A, Low VCE(sat) Complementary Dual MCPH6 Applicaitons • MOSFET gate drivers, relay drivers, lamp drivers, motor drivers Features • • Composite type with a PNP transistor and an NPN transistor contained in one package facilitating high-density mounting Ultrasmall package permitting applied sets to be small and slim Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Total Power Dissipation Ratings Unit (--30)40 V (--)30 V VEBO IC (--)5 ICP PC Collector Dissipation Conditions VCBO VCEO Junction Temperature PT Tj Storage Temperature Tstg (--)700 When mounted on ceramic substrate (600mm2×0.8mm) 1unit When mounted on ceramic substrate (600mm2×0.8mm) V mA (--)3 A 0.5 W 0.55 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7022A-012 • Package : MCPH6 • JEITA, JEDEC : SC-88, SC-70-6, SOT-363 • Minimum Packing Quantity : 3,000 pcs./reel 6 5 0 to 0.02 1 2 EP TL 3 0.65 Marking LOT No. 0.3 Electrical Connection 0.85 0.25 Packing Type : TL 4 LOT No. 0.07 MCH6541-TL-E 0.15 2.1 1.6 0.25 2.0 1 2 3 1 : Emitter1 (PNP TR) 2 : Base1 (PNP TR) 3 : Collector2 (NPN TR) 4 : Emitter2 (NPN TR) 5 : Base2 (NPN TR) 6 : Collector1 (PNP TR) 6 5 4 MCPH6 Semiconductor Components Industries, LLC, 2013 September, 2013 6 5 4 1 2 3 92612 TKIM/22008EA TIIM TC-00001087 No.8949-1/8 MCH6541 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions Ratings min typ max ICBO IEBO VCB=(--)30V, IE=0A VEB=(--)4V, IC=0A hFE fT VCE=(--)2V, IC=(--10)50mA Gain-Bandwidth Product VCE=(--)2V, IC=(--)50mA (520)540 Output Capacitance Cob (4.7)3.3 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)200mA, IB=(--)10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time (200)300 IC=(--)200mA, IB=(--)10mA V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A V(BR)EBO ton tstg tf See specified Test Circuit. Unit (--)100 nA (--)100 nA (500)800 MHz pF (--110)85 (--220)190 (--)0.9 (--)1.2 mV V (--30)40 V IC=(--)1mA, RBE=∞ (--)30 V IE=(--)10μA, IC=0A (--)5 V 35 ns (125)255 ns (25)40 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% INPUT OUTPUT IB2 VR RB RL 50Ω + 220μF VBE= --5V + 470μF VCC=12V IC=20IB1= --20IB2=300mA For PNP, the polarity is reversed. Ordering Information Device MCH6541-TL-E Package Shipping memo MCPH6 3,000pcs./reel Pb Free No.8949-2/8 MCH6541 [PNP] --400 --1mA --200 --500μA [NPN] 7mA A 5mA 3mA 30m 500 10m 15m A 20mA 600 --3mA --2mA --300 IC -- VCE 700 A A --20m A --15m A --10m A --7m --5mA 2mA 400 1mA A 0 --3 mA --25 Collector Current, IC -- mA -mA 40mA --500 --50 Collector Current, IC -- mA --600 mA 300 50m IC -- VCE --700 400μA 200 200μA 100 --100 0 0 IB=0μA 0 0 --100 --200 --300 --400 --500 --600 --700 --800 --900 --1000 Collector-to-Emitter Voltage, VCE -- mV IC -- VBE --800 IB=0μA 100 200 300 400 500 600 700 Collector-to-Emitter Voltage, VCE -- mV IT05049 [PNP] IC -- VBE 800 [NPN] --500 --400 --300 --200 600 500 400 --25°C --600 Ta=7 5°C 25°C Collector Current, IC -- mA 700 Ta=7 5°C 25°C --25°C Collector Current, IC -- mA --700 1000 IT05082 VCE=2V VCE= --2V 300 200 100 --100 0 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 [PNP] DC Current Gain, hFE --25°C 2 100 0.8 1.0 IT05083 [NPN] VCE=2V Ta=75°C 7 3 0.6 hFE -- IC 1000 Ta=75°C 25°C 5 0.4 Base-to-Emitter Voltage, VBE -- V VCE= --2V 7 0.2 IT05050 hFE -- IC 1000 DC Current Gain, hFE 900 800 25°C 5 --25°C 3 2 7 5 3 --1.0 2 3 5 7 --10 3 2 5 7 --100 2 3 Collector Current, IC -- mA VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 5°C 7 Ta= 5°C --2 5°C 3 2 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05054 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA [PNP] IC / IB=20 7 5 100 1.0 5 7--1000 IT05051 VCE(sat) -- IC 1000 7 5 5 7 1000 IT05084 [NPN] IC / IB=20 3 2 100 7 5 °C 75 5°C 3 2 2 Ta= 5 --2 °C 10 7 5 3 2 1.0 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05085 No.8949-3/8 MCH6541 VCE(sat) -- IC 3 [PNP] --1000 7 5 3 2 5°C --100 7 7 Ta= 5°C --2 5 3 C 25° 2 --10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 VBE(sat) -- IC --10 [PNP] 2 Ta= --25°C 75°C 5 25°C 3 2 --0.1 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 3 Cob -- VCB 10 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 3 2 5 7 --10 2 2 3 5 7 100 2 IT05053 f T -- IC [PNP] [NPN] IC / IB=20 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 5 7 10 3 2 3 5 7 100 2 [NPN] f=1MHz 7 5 3 2 2 3 5 7 10 2 3 2 100 --1.0 2 3 5 7 --10 2 3 5 7 --100 Collector Current, IC -- mA 2 3 5 7--1000 IT05052 3 Collector-to-Base Voltage, VCB -- V 5 IT05088 fT -- IC 1000 Gain-Bandwidth Product, fT -- MHz Gain-Bandwidth Product, f T -- MHz 5 5 7 1000 IT05087 3 Cob -- VCB [NPN] VCE=10V VCE= --10V 7 5 7 1000 3 IT05086 VBE(sat) -- IC 1.0 1.0 5 3 Collector-to-Base Voltage, VCB -- V 1000 5 7 10 3 10 5 3 2 [PNP] 7 2 3 Collector Current, IC -- mA f=1MHz 0.1 --1.0 °C 25 5°C --2 = Ta 2 0.1 1.0 5 7--1000 IT05056 Collector Current, IC -- mA °C 7 5 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 7 75 100 7 5 --1.0 3 2 Collector Current, IC -- mA IC / IB=20 7 5 10 1.0 5 7--1000 IT05055 Collector Current, IC -- mA [NPN] IC / IB=50 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 VCE(sat) -- IC 1000 IC / IB=50 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05089 No.8949-4/8 MCH6541 Ron -- IB 100 7 5 f=1MHz 7 OUT 1kΩ 2 IB 10 7 5 3 2 1.0 7 5 3 [NPN] 1kΩ f=1MHz OUT IN 1kΩ 5 ON Resistance, Ron -- Ω ON Resistance, Ron -- Ω 10 IN 3 Ron -- IB [PNP] 1kΩ 3 IB 2 1.0 7 5 3 2 2 0.1 --0.1 2 3 5 7 2 --1.0 3 Base Current, IB -- mA PD -- Ta Allowable Power Dissipation, PD -- W 0.6 5 7 --10 IT06403 0.1 0.1 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06793 [PNP/NPN] When mounted on ceramic substrate (600mm2✕0.8mm) 0.55 0.5 0.4 To t 0.3 1u al ni di t ss ip at io n 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10744 No.8949-5/8 MCH6541 Embossed Taping Specification MCH6541-TL-E No.8949-6/8 MCH6541 Outline Drawing MCH6541-TL-E Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No.8949-7/8 MCH6541 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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