華昕電子 HI-SINCERITY SCR XL 1225 / ML 1225 0.6A 300/400 VOLTAGE SCR IGT < 200 µA DESCRIPTION The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost and high volume applications. ABSOLUTE MAXIMUM RATING Parameter Repetitive Peak Off State Voltage On-State Current Average On-State Current Peak Reverse Gate Voltage Peak Gate Current Gate Dissipation Operating Temperature Storage Temperature Part No. Symbol XL 1225 VDRM ML 1225 VDRM IT(RMS) IT (AV) VGRM IGM PG (AV) Tj Tstg Min. 400 300 0.5 0.5 8 1 0.1 -40 -40 Max 125 125 Unit V V A A Test Conditions Tj=40℃ to 125℃ (RGK=1K) TC=40℃ Half Cycle=180℃, TC=40℃ V A W ℃ ℃ IGR=10µA 10µs max. 20 ms max. ELECTRICAL CHARACTERISTICS ( TA=25℃) Parameter Off-State Leakage Current Off-State Leakage Current On-State Voltage On-State Threshold Voltage On-State Slops Resistance Gate Trigger Current Gate Trigger Voltage Holding Current Latching Current Critical Rate of Voltage Rise Critical Rate of Current Rise Gate Controlled Delay Time Commutated Turn-Off Time Thermal Resistance junc. to case Thermal Resistance junc. to amb. Symbol IDRM IDRM VT VT(TO) rT IGT VGT IH IL dv/dt di/dt tgd tg RΘjc RΘja Min. Max 0.1 1.0 1.93 0.95 600 200 0.8 5 6 25 30 500 200 100 K/W 200 K/W Unit mA µA V V m µA V mA mA V/µs A/µs ns µs Test Conditions @VDRM (RGK=1K)Tj=125℃ @VDRM (RGK=1K)Tj=25℃ at IT=0.8A, Tj=25 ℃ Tj=125℃ Tj=125℃ VD=7V VD=7V RGK=1K(ohm) RGK=1K(ohm) VD=0.67≠VDRM(RGK=1K), Tj=125℃ IG=10mA,diG/dt=0, 1A/µs, Tj=125℃ IG=10mA,diG/dt=0.1A/µs TC=85℃, VD=0.67≠VDRM VR=35V, IT=IT(AV) PIN ASSIGNMENT (TO-92 PACKAGE) K : Cathode G : Gate A : Anode