華昕電子 HI-SINCERITY SCR

華昕電子 HI-SINCERITY SCR
XL 1225 / ML 1225
0.6A 300/400 VOLTAGE SCR IGT < 200 µA
DESCRIPTION
The 1225 Silicon Controlled Rectifiers are high performance diffused PNPN devices. These parts are intended for low cost
and high volume applications.
ABSOLUTE MAXIMUM RATING
Parameter
Repetitive Peak
Off State Voltage
On-State Current
Average On-State Current
Peak Reverse Gate Voltage
Peak Gate Current
Gate Dissipation
Operating Temperature
Storage Temperature
Part No. Symbol
XL 1225 VDRM
ML 1225 VDRM
IT(RMS)
IT (AV)
VGRM
IGM
PG (AV)
Tj
Tstg
Min.
400
300
0.5
0.5
8
1
0.1
-40
-40
Max
125
125
Unit
V
V
A
A
Test Conditions
Tj=40℃ to
125℃ (RGK=1K)
TC=40℃
Half Cycle=180℃, TC=40℃
V
A
W
℃
℃
IGR=10µA
10µs max.
20 ms max.
ELECTRICAL CHARACTERISTICS ( TA=25℃)
Parameter
Off-State Leakage Current
Off-State Leakage Current
On-State Voltage
On-State Threshold Voltage
On-State Slops Resistance
Gate Trigger Current
Gate Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Gate Controlled Delay Time
Commutated Turn-Off Time
Thermal Resistance junc. to case
Thermal Resistance junc. to amb.
Symbol
IDRM
IDRM
VT
VT(TO)
rT
IGT
VGT
IH
IL
dv/dt
di/dt
tgd
tg
RΘjc
RΘja
Min.
Max
0.1
1.0
1.93
0.95
600
200
0.8
5
6
25
30
500
200
100 K/W
200 K/W
Unit
mA
µA
V
V
m
µA
V
mA
mA
V/µs
A/µs
ns
µs
Test Conditions
@VDRM (RGK=1K)Tj=125℃
@VDRM (RGK=1K)Tj=25℃
at IT=0.8A, Tj=25 ℃
Tj=125℃
Tj=125℃
VD=7V
VD=7V
RGK=1K(ohm)
RGK=1K(ohm)
VD=0.67≠VDRM(RGK=1K), Tj=125℃
IG=10mA,diG/dt=0, 1A/µs, Tj=125℃
IG=10mA,diG/dt=0.1A/µs
TC=85℃, VD=0.67≠VDRM
VR=35V, IT=IT(AV)
PIN ASSIGNMENT (TO-92 PACKAGE)
K : Cathode
G : Gate
A : Anode