AO4435 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4435 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4435 is Pb-free (meets ROHS & Sony 259 specifications). VDS = -30V ID = -10A (VGS = -10V) RDS(ON) < 18mΩ (VGS = -10V) RDS(ON) < 36mΩ (VGS = -5V) SOIC-8 Top View D S D S D S D G D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage -30 VGS ±25 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A TA=25°C ID IDM TA=70°C B TA=25°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TJ, TSTG Symbol A A t ≤ 10s Steady State Steady State Alpha & Omega Semiconductor, Ltd. -8 -8 -6 V A -80 PD TA=70°C -10 Units V RθJA RθJL 3.1 1.7 2.0 1.1 -55 to 150 Typ 32 60 17 Max 40 75 24 W °C Units °C/W °C/W °C/W www.aosmd.com AO4435 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID = -250µA, VGS = 0V -30 -1 TJ = 55°C -5 Gate-Body leakage current VDS = 0V, VGS = ±25V VGS(th) Gate Threshold Voltage VDS = VGS ID = -250µA -1.7 ID(ON) On state drain current VGS = -10V, VDS = -5V -80 VGS = -10V, ID = -10A TJ=125°C Static Drain-Source On-Resistance VGS = -5V, ID = -5A gFS Forward Transconductance VSD Diode Forward Voltage IS = -1A,VGS = 0V Maximum Body-Diode Continuous Current IS VDS = -5V, ID = -10A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Max VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-10A µA ±100 nA -2.3 -3 V 15 18 22 27 27 36 A 22 -0.74 1130 VGS=0V, VDS=-15V, f=1MHz Units V VDS = -30V, VGS = 0V IGSS RDS(ON) Typ mΩ S -1 V -3.5 A 1400 pF 240 pF 155 pF 5.8 8 Ω 18 24 nC 9.5 5.5 nC 3.3 nC 8.7 ns VGS=-10V, VDS=-15V, RL=1.5Ω, RGEN=3Ω 8.5 ns 18 ns 7 trr Body Diode Reverse Recovery Time IF=-10A, dI/dt=100A/µs 25 Qrr Body Diode Reverse Recovery Charge IF=-10A, dI/dt=100A/µs 12 ns 30 ns nC A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep T j=25C. Rev0: Aug. 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 -10V 60 60 -6V -ID(A) -ID (A) VDS= -5V -8V 40 40 -4.5V 20 125°C 20 VGS= -4V 25°C 0 0 0 1 2 3 4 5 0 1 -VDS (Volts) Figure 1: On-Region Characteristics 4 5 6 1.6 Normalized On-Resistance VGS=-5V RDS(ON) (mΩ) 3 -VGS(Volts) Figure 2: Transfer Characteristics 40 30 VGS=-10V 20 10 0 5 10 VGS=-10V ID=-10A 1.4 1.2 1.0 VGS=-5V ID=-5A 0.8 0.6 IF=-6.5A, 15 dI/dt=100A/µs 20 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 50 75 100 125 150 175 1E+01 1E+00 1E-01 -IS (A) 35 30 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=-10A 40 RDS(ON) (mΩ) 2 125°C 125°C 1E-02 25°C 1E-03 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1E-05 25°C 15 AND RELIABILITY WITHOUT FUNCTIONS NOTICE. 1E-06 10 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4435 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000 10 -VGS (Volts) Capacitance (pF) VDS=-15V ID=-10A 8 6 4 2 0 Ciss 1500 1000 Coss 500 Crss 0 0 5 10 15 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 100 10µs 10 100µs 1 1ms 10ms Power (W) -ID (Amps) 25 1000 1000 100ms TJ(Max)=150°C TA=25°C 0.1 0.1 1 IF=-6.5A, dI/dt=100A/µs 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 1 0.00001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) -VDS (Volts) 10 100 10s DC 0.01 ZθJA Normalized Transient Thermal Resistance 20 -VDS (Volts) Figure 8: Capacitance Characteristics 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 0.01 Ton FUNCTIONS AND RELIABILITY WITHOUT T SingleNOTICE. Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com