AOSMD AO6804

AO6804
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6804 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device
is suitable for use as a load switch or in PWM
applications. AO6804 is Pb-free (meets ROHS & Sony
259 specifications).
VDS = 20V
ID = 5.0A
(VGS = 4.5V)
Typical Rds
RDS(ON) < 24mΩ (VGS = 4.5V)
RDS(ON) < 26mΩ (VGS = 4.0V)
RDS(ON) < 28mΩ (VGS = 3.1V)
RDS(ON) < 31mΩ (VGS = 2.5V)
D1
D2
TSOP6
Top View
S1
D1/D2
S2
1 6
2 5
3 4
G1
D1/D2
G2
G1
G2
S1
S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
10 Sec
Steady State
Parameter
VDS
Drain-Source Voltage
20
VGS
±12
Gate-Source Voltage
Continuous Drain
5
4
TA=25°C
Current A
TA=70°C
4
3.2
ID
Pulsed Drain Current
B
IDM
TA=25°C
TA=70°C
Junction and Storage Temperature Range
Power Dissipation A
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead C
A
t ≤ 10s
Steady State
Steady State
Alpha & Omega Semiconductor, Ltd.
A
25
1.3
0.8
PD
TJ, TSTG
Symbol
A
Units
V
V
RθJA
RθJL
0.8
0.5
-55 to 150
Typ
76
118
54
Max
95
150
68
W
°C
Units
°C/W
°C/W
°C/W
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AO6804
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
VGS(th)
ID(ON)
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Min
Conditions
ID = 250µA, VGS = 0V
VDS = 20V, VGS = 0V
gFS
VSD
IS
VDS = 0V, VGS = ±12V
VDS = VGS ID = 250µA
VGS = 4.5V, VDS = 5V
VGS = 4.5V, ID = 5.0A
VGS = 4.0V, ID = 4.5A
VGS = 3.1V, ID = 4.5A
VGS = 2.5V, ID = 4.0A
Forward Transconductance
VDS = 5V, ID = 5.0A
Diode Forward Voltage
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
trr
Qrr
Body Diode Reverse Recovery Charge
0.75
1
5
±500
1.2
VGS=0V, VDS=10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS= 4.5V, VDS= 10V, ID= 5A
VGS=10V, VDS=10V, RL=2.0Ω,
RGEN=3Ω
IF=5A, dI/dt=100A/µs
IF=5A, dI/dt=100A/µs
Units
V
TJ = 55°C
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
20
TJ=125°C
RDS(ON)
Typ
0.5
25
18
25
22
21
22
24
33
26
28
31
7
0.65
µA
nA
V
A
32
43
34
37
42
mΩ
mΩ
mΩ
1
1.1
S
V
A
580
95
70
3.5
725
pF
5.8
1
1.6
2.4
6.4
38
9.5
18
6
7.7
mΩ
pF
5.3
24
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in
any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
SOA curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
Rev1 September 2007
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO6804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
25
4.5V
3V
2V
10
ID(A)
15
ID (A)
VDS= 5V
12
2.5V
20
VGS=1.8V
10
8
125°C
6
25°C
4
5
2
0
-40°C
0
0
1
2
3
4
5
0
34
VGS= 2.5V
Normalized On-Resistance
RDS(ON) (mΩ)
0.8
1.2
1.6
2
1.6
32
30
VGS= 3.1V
28
VGS= 4.0V
26
VGS= 4.5V
24
22
0
2
4
VGS= 4.5V
ID= 5A
1.4
1.2
1.0
0.8
0.6
I6F=-6.5A, 8dI/dt=100A/µs
10
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
60
1E+01
ID= 5.0A
1E+00
50
40
125°C
IS (A)
1E-01
RDS(ON) (mΩ)
0.4
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
125°C
1E-02
1E-03
25°C OR USES AS CRITICAL
30
THIS PRODUCT
HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS
25°C
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARIS
1E-04
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,
-40°C
1E-05
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
-40°C
1E-06
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1
2
3
4
5
6
7
8
9
10
VSD (Volts)
VGS (Volts)
Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AO6804
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
5
VDS= 10V
ID= 5A
800
Capacitance (pF)
VGS (Volts)
4
3
2
Ciss
600
400
1
200
0
0
Coss
Crss
0
1
2
3
4
5
6
7
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10µs
20
100µs
1
RDS(ON)
limited
1ms
10ms
100ms
0.1
TJ(Max)=150°C
TA=25°C
DC
0.01
0.1
0.1
0.00001
VDS (Volts)
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=118°C/W
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note E)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note E)
10
10
1
10s
IF=-6.5A,
dI/dt=100A/µs
10
100
1
TJ(Max)=150°C
TA=25°C
100
Power (W)
10
ID (Amps)
15
1000
100
ZθJA Normalized Transient
Thermal Resistance
10
VDS (Volts)
Figure 8: Capacitance Characteristics
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS
DOES NOT ASSUME ANY LIABILITY ARIS
OUT OF SUCH
0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
Ton
FUNCTIONS AND RELIABILITY WITHOUT
T
Single NOTICE.
Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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