DMN53D0LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary V(BR)DSS ID TA = +25°C RDS(ON) 50V NEW PRODUCT Features and Benefits 1.6Ω @ VGS = 10V 350 mA 2.5Ω @ VGS = 4.5V 200 mA • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/ Output Leakage • Ultra-Small Surface Mount Package Description and Applications • ESD Protected to 2KV This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data • • Case: SOT563 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 • Weight: 0.006 grams (approximate) SOT563 ESD protected Top View Ordering Information G1 S1 S2 G2 D1 Equivalent Circuit (Note 4) Part Number DMN53D0LV-7 DMN53D0LV-13 Notes: D2 Case SOT563 SOT563 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D2 G1 S1 53B = Product Type Marking Code (See Note 6) YM = Date Code Marking Y = Year ex: B = 2014 M = Month ex: 9 = September 53B YM S2 Date Code Key Year Code Month Code 2014 B Jan 1 G2 D1 2015 C Feb 2 DMN53D0LV Document number: DS37073 Rev. 2 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 5 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D June 2014 © Diodes Incorporated DMN53D0LV Maximum Ratings (@TA = +25°C, unless otherwise specified.) NEW PRODUCT Characteristic Symbol Value Unit V Drain Source Voltage VDSS 50 Gate-Source Voltage VGSS ±20 V Drain Current (Note 5) ID 350 mA Symbol Value Unit PD 430 mW RθJA 294 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 50 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 50V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ 10 µA VGS = ±20V, VDS = 0V VGS(th) 0.8 ⎯ 1.5 V VDS = VGS, ID = 250µA RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1.6 2.5 4.5 Ω VGS = 10V, ID = 500mA VGS = 4.5V, ID = 200mA VGS = 2.5V, ID = 100mA VSD 0.5 ⎯ 1.4 V VGS = 0V, IS = 500mA Input Capacitance Ciss ⎯ 46 ⎯ pF Output Capacitance Coss ⎯ 5.3 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 4.0 ⎯ pF Total Gate Charge Qg ⎯ 0.6 ⎯ nC Gate-Source Charge Qgs ⎯ 0.2 ⎯ nC Gate-Drain Charge Qgd ⎯ 0.1 ⎯ nC Turn-On Delay Time tD(on) ⎯ 2.7 ⎯ ns Turn-On Rise Time tr ⎯ 2.5 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 19 ⎯ ns tf ⎯ 11 ⎯ ns ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Turn-Off Fall Time Notes: VDS = 25V, VGS = 0V f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN53D0LV Document number: DS37073 Rev. 2 - 2 2 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LV 1.5 0.8 0.9 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5V VGS = 5V VGS = 4.5V VGS = 2.5V VGS = 3.5V 0.6 0.3 0.6 TA = 150°C 0.4 TA = 85°C TA = 125°C 0.2 VGS = 2V TA = 25°C VGS = 1.8V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 1 0.9 VGS = 5V 0.8 VGS = 10V 0.7 0.6 0.5 0 0.2 0.4 0.6 0.8 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2.4 2.0 VGS = 10V ID = 500mA 1.6 VGS = 5V ID = 300mA 1.2 0.8 0.4 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 1.2 1 VGS = 3V VGS = 10V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMN53D0LV Document number: DS37073 Rev. 2 - 2 3 of 5 www.diodes.com TA = -55°C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 2.5 VGS = 4.5V 2 TA = 150°C T A = 125°C 1.5 T A = 85°C 1 T A = 25°C 0.5 0 TA = -55°C 0 0.2 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 1 2 1.8 1.6 1.4 VGS = 5V ID = 300mA 1.2 1 0.8 VGS = 10V ID = 500mA 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature June 2014 © Diodes Incorporated DMN53D0LV 0.8 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.0 1.8 1.6 1.4 ID = 1mA 1.2 ID = 250µA 1.0 0.8 TA = 150°C 0.6 TA = 125°C 0.4 TA = 25°C TA = 85°C 0.2 TA = -55°C 0.6 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 100 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 2.0 10 Coss Crss 8 6 VDS = 10V ID = 250mA 4 2 f = 1MHz 1 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 0 40 0 0.3 0.6 0.9 1.2 1.5 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A B C D G M K H DMN53D0LV Document number: DS37073 Rev. 2 - 2 SOT563 Dim Min Max Typ A 0.15 0.30 0.20 B 1.10 1.25 1.20 C 1.55 1.70 1.60 D 0.50 G 0.90 1.10 1.00 H 1.50 1.70 1.60 K 0.55 0.60 0.60 L 0.10 0.30 0.20 M 0.10 0.18 0.11 All Dimensions in mm L 4 of 5 www.diodes.com June 2014 © Diodes Incorporated DMN53D0LV Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 NEW PRODUCT Z C2 Dimensions Value (in mm) Z 2.2 G 1.2 X 0.375 Y 0.5 C1 1.7 C2 0.5 C1 G Y X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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