DMN53D0LV NEW PROD UC T Product Summary Description and

DMN53D0LV
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Product Summary
V(BR)DSS
ID
TA = +25°C
RDS(ON)
50V
NEW PRODUCT
Features and Benefits
1.6Ω @ VGS = 10V
350 mA
2.5Ω @ VGS = 4.5V
200 mA
•
Dual N-Channel MOSFET
•
Low On-Resistance
•
Very Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/ Output Leakage
•
Ultra-Small Surface Mount Package
Description and Applications
•
ESD Protected to 2KV
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: SOT563
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
•
Weight: 0.006 grams (approximate)
SOT563
ESD protected
Top View
Ordering Information
G1
S1
S2
G2
D1
Equivalent Circuit
(Note 4)
Part Number
DMN53D0LV-7
DMN53D0LV-13
Notes:
D2
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D2
G1
S1
53B = Product Type Marking Code (See Note 6)
YM = Date Code Marking
Y = Year ex: B = 2014
M = Month ex: 9 = September
53B YM
S2
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
G2
D1
2015
C
Feb
2
DMN53D0LV
Document number: DS37073 Rev. 2 - 2
Mar
3
2016
D
Apr
4
May
5
2017
E
Jun
6
1 of 5
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
June 2014
© Diodes Incorporated
DMN53D0LV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
NEW PRODUCT
Characteristic
Symbol
Value
Unit
V
Drain Source Voltage
VDSS
50
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 5)
ID
350
mA
Symbol
Value
Unit
PD
430
mW
RθJA
294
°C/W
TJ, TSTG
-55 to +150
°C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
50
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 50V, VGS = 0V
Gate-Body Leakage
IGSS
⎯
⎯
10
µA
VGS = ±20V, VDS = 0V
VGS(th)
0.8
⎯
1.5
V
VDS = VGS, ID = 250µA
RDS (ON)
⎯
⎯
⎯
⎯
⎯
⎯
1.6
2.5
4.5
Ω
VGS = 10V, ID = 500mA
VGS = 4.5V, ID = 200mA
VGS = 2.5V, ID = 100mA
VSD
0.5
⎯
1.4
V
VGS = 0V, IS = 500mA
Input Capacitance
Ciss
⎯
46
⎯
pF
Output Capacitance
Coss
⎯
5.3
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
4.0
⎯
pF
Total Gate Charge
Qg
⎯
0.6
⎯
nC
Gate-Source Charge
Qgs
⎯
0.2
⎯
nC
Gate-Drain Charge
Qgd
⎯
0.1
⎯
nC
Turn-On Delay Time
tD(on)
⎯
2.7
⎯
ns
Turn-On Rise Time
tr
⎯
2.5
⎯
ns
Turn-Off Delay Time
tD(off)
⎯
19
⎯
ns
tf
⎯
11
⎯
ns
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Turn-Off Fall Time
Notes:
VDS = 25V, VGS = 0V
f = 1.0MHz
VGS = 4.5V, VDS = 10V,
ID = 250mA
VDD = 30V, VGS = 10V,
RG = 25Ω, ID = 200mA
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
DMN53D0LV
Document number: DS37073 Rev. 2 - 2
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© Diodes Incorporated
DMN53D0LV
1.5
0.8
0.9
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5V
VGS = 5V
VGS = 4.5V
VGS = 2.5V
VGS = 3.5V
0.6
0.3
0.6
TA = 150°C
0.4
TA = 85°C
TA = 125°C
0.2
VGS = 2V
TA = 25°C
VGS = 1.8V
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
1
0.9
VGS = 5V
0.8
VGS = 10V
0.7
0.6
0.5
0
0.2
0.4
0.6
0.8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
2.4
2.0
VGS = 10V
ID = 500mA
1.6
VGS = 5V
ID = 300mA
1.2
0.8
0.4
-50
0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
NEW PRODUCT
1.2
1
VGS = 3V
VGS = 10V
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
DMN53D0LV
Document number: DS37073 Rev. 2 - 2
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TA = -55°C
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
2.5
VGS = 4.5V
2
TA = 150°C
T A = 125°C
1.5
T A = 85°C
1
T A = 25°C
0.5
0
TA = -55°C
0
0.2
0.4
0.6
0.8
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
1
2
1.8
1.6
1.4
VGS = 5V
ID = 300mA
1.2
1
0.8
VGS = 10V
ID = 500mA
0.6
0.4
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
June 2014
© Diodes Incorporated
DMN53D0LV
0.8
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.0
1.8
1.6
1.4
ID = 1mA
1.2
ID = 250µA
1.0
0.8
TA = 150°C
0.6
TA = 125°C
0.4
TA = 25°C
TA = 85°C
0.2
TA = -55°C
0.6
-50
0
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10
100
Ciss
VGS GATE THRESHOLD VOLTAGE (V)
CT, JUNCTION CAPACITANCE (pF)
NEW PRODUCT
2.0
10
Coss
Crss
8
6
VDS = 10V
ID = 250mA
4
2
f = 1MHz
1
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
0
40
0
0.3
0.6
0.9
1.2
1.5
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B
C
D
G
M
K
H
DMN53D0LV
Document number: DS37073 Rev. 2 - 2
SOT563
Dim Min
Max
Typ
A
0.15 0.30 0.20
B
1.10 1.25 1.20
C
1.55 1.70 1.60
D
0.50
G
0.90 1.10 1.00
H
1.50 1.70 1.60
K
0.55 0.60 0.60
L
0.10 0.30 0.20
M
0.10 0.18 0.11
All Dimensions in mm
L
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DMN53D0LV
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C2
NEW PRODUCT
Z
C2
Dimensions Value (in mm)
Z
2.2
G
1.2
X
0.375
Y
0.5
C1
1.7
C2
0.5
C1
G
Y
X
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
www.diodes.com
DMN53D0LV
Document number: DS37073 Rev. 2 - 2
5 of 5
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June 2014
© Diodes Incorporated