DMP2066LVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C 45mΩ @ VGS = -4.5V -4.5A 65mΩ @ VGS = -2.5V -3.8A V(BR)DSS NEW PRODUCT -20V Features and Benefits Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)), and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data General Purpose Interfacing Switch Power Management Functions Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) D SOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Pin-Out Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2066LVT-7 DMP2066LVT-13 Notes: Case SOT26 SOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT26 26P = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) Y or = Year (ex: A = 2013) M = Month (ex: 9 = September) Shanghai A/T Site Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2066LVT Document number: DS36578 Rev. 4 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D February 2015 © Diodes Incorporated DMP2066LVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS 8 V ID -4.5 -3.7 A IDM -20 A IS -2.0 A NEW PRODUCT Drain Current (Note 5) Continuous TA = +25°C TA = +70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Body-Diode Continuous Current (Note 5) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol Value Units PD 1.2 W RθJA 100 74 °C/W PD 1.8 W RθJA 70 46 °C/W TJ, TSTG -55 to +150 °C (@TA = +25°C, unless otherwise specified.) Characteristic STATIC PARAMETERS (Note 7) Symbol Min Typ Max Unit BVDSS -20 V ID = -250µA, VGS = 0V IDSS -1 -10 μA VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V Zero Gate Voltage Drain Current @TJ = +150°C (Note 8) IDSS — — -100 μA VDS = -16V, VGS = 0V Gate-Body Leakage Current IGSS 100 nA VDS = 0V, VGS = 8V VGS(th) -0.4 -1.5 V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS (ON) 25 33 45 65 mΩ VGS = -4.5V, ID = -4.5A VGS = -2.5V, ID = -3.8A Static Drain-Source On-Resistance @ TJ = +125°C (Note 8) RDS (ON) 72 mΩ VGS = -4.5V, ID = -4.5A VSD -0.5 -0.72 -1.4 V IS = -2.1A, VGS = 0V ID(ON) 10 — — A VDS ≦5V, VGS = 4.5V Input Capacitance Ciss 1,496 2,990 pF Output Capacitance Coss 130 260 pF Reverse Transfer Capacitance Crss 116 230 pF Total Gate Charge QG 14.4 25 Gate-Source Charge QGS 2.6 5 Gate-Drain Charge QGD 2.7 5.5 Turn-On Delay Time td(on) 8.5 30 tr 11 60 td(off) 61 130 tf 25 100 Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TJ = +55°C (Note 8) Gate Threshold Voltage Diode Forward Voltage On State Drain Current (Note 8) Test Condition DYNAMIC PARAMETERS (Note 8) Rise Time Turn-Off Delay Time Fall Time Notes: VDS = -15V, VGS = 0V f = 1.0MHz nC VDS = -10V, VGS = -4.5V, ID = -4.5A ns VDS = -5V, VGS = -4.5V, ID = -1A, RG = 6.0Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2066LVT Document number: DS36578 Rev. 4 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated 15 15 ID, DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 20 10 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V DS, DRAIN -SOURCE VOLTAGE(V) Figure 1 Typical Output Characteristics 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE(V) Figure 2 Typical Transfer Characteristics 3 0.05 0.06 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() R DS(ON), DRAIN-SOURCE ON-RESISTANCE() 5 0 0 5 0.08 VGS = 1.8V VGS = 2.5V 0.04 VGS= 4.5V 0.02 0 0 5 10 15 ID, DRAIN SOURCE CURRENT Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 1.7 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT DMP2066LVT 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP2066LVT Document number: DS36578 Rev. 4 - 2 3 of 6 www.diodes.com TA=150°C VGS = 10V TA=85°C TA=125°C 0.04 0.03 0.02 TA=25°C TA=-55°C 0.01 0 0 5 10 15 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) IS, SOURCE CURRENT (A) 1 0.8 ID= 1mA 0.6 ID= -250µA 0.4 16 12 TA= 25C 8 4 0.2 0 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10000 100000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) TA = 150C IDSS, LEAKAGE CURRENT (nA) 10000 1000 100 TA = 85 C 10 C ISS 1000 COSS CRSS TA = 25C 1 100 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage 0 -4 -8 -12 -16 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance -20 5 VGS, GATE SOURCE VOLTAGE (V) NEW PRODUCT DMP2066LVT 20 1.2 4 3 2 1 0 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge Characteristics DMP2066LVT Document number: DS36578 Rev. 4 - 2 18 4 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP2066LVT Package Outline Dimensions TSOT26 D NEW PRODUCT e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout TSOT26 C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMP2066LVT Document number: DS36578 Rev. 4 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP2066LVT IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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