Data Sheet - Diodes Incorporated

DMP2066LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
RDS(ON) max
ID max
TA = +25°C
45mΩ @ VGS = -4.5V
-4.5A
65mΩ @ VGS = -2.5V
-3.8A
V(BR)DSS
NEW PRODUCT
-20V
Features and Benefits






Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)), and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications


Mechanical Data





General Purpose Interfacing Switch
Power Management Functions
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish  Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
D
SOT26
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Top View
Pin-Out
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP2066LVT-7
DMP2066LVT-13
Notes:
Case
SOT26
SOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
February 2015
© Diodes Incorporated
DMP2066LVT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Unit
Drain-Source Voltage
Characteristic
VDSS
-20
V
Gate-Source Voltage
VGSS
8
V
ID
-4.5
-3.7
A
IDM
-20
A
IS
-2.0
A
NEW PRODUCT
Drain Current (Note 5) Continuous
TA = +25°C
TA = +70°C
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Body-Diode Continuous Current (Note 5)
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Symbol
Value
Units
PD
1.2
W
RθJA
100
74
°C/W
PD
1.8
W
RθJA
70
46
°C/W
TJ, TSTG
-55 to +150
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
STATIC PARAMETERS (Note 7)
Symbol
Min
Typ
Max
Unit
BVDSS
-20


V
ID = -250µA, VGS = 0V
IDSS


-1
-10
μA
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V
Zero Gate Voltage Drain Current @TJ = +150°C (Note 8)
IDSS
—
—
-100
μA
VDS = -16V, VGS = 0V
Gate-Body Leakage Current
IGSS


100
nA
VDS = 0V, VGS = 8V
VGS(th)
-0.4

-1.5
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)

25
33
45
65
mΩ
VGS = -4.5V, ID = -4.5A
VGS = -2.5V, ID = -3.8A
Static Drain-Source On-Resistance @ TJ = +125°C (Note 8)
RDS (ON)


72
mΩ
VGS = -4.5V, ID = -4.5A
VSD
-0.5
-0.72
-1.4
V
IS = -2.1A, VGS = 0V
ID(ON)
10
—
—
A
VDS ≦5V, VGS = 4.5V
Input Capacitance
Ciss

1,496
2,990
pF
Output Capacitance
Coss

130
260
pF
Reverse Transfer Capacitance
Crss

116
230
pF
Total Gate Charge
QG

14.4
25
Gate-Source Charge
QGS

2.6
5
Gate-Drain Charge
QGD

2.7
5.5
Turn-On Delay Time
td(on)

8.5
30
tr

11
60
td(off)

61
130
tf

25
100
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
@ TJ = +55°C (Note 8)
Gate Threshold Voltage
Diode Forward Voltage
On State Drain Current (Note 8)
Test Condition
DYNAMIC PARAMETERS (Note 8)
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
VDS = -15V, VGS = 0V
f = 1.0MHz
nC
VDS = -10V, VGS = -4.5V,
ID = -4.5A
ns
VDS = -5V, VGS = -4.5V,
ID = -1A, RG = 6.0Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
2 of 6
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February 2015
© Diodes Incorporated
15
15
ID, DRAIN CURRENT (A)
20
ID, DRAIN CURRENT (A)
20
10
10
5
0
0
0.5
1
1.5 2 2.5 3 3.5
4 4.5
V DS, DRAIN -SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
0.5
1
1.5
2
2.5
VGS, GATE SOURCE VOLTAGE(V)
Figure 2 Typical Transfer Characteristics
3
0.05
0.06
RDS(ON), DRAIN-SOURCE ON-RESISTANCE()
R DS(ON), DRAIN-SOURCE ON-RESISTANCE()
5
0
0
5
0.08
VGS = 1.8V
VGS = 2.5V
0.04
VGS= 4.5V
0.02
0
0
5
10
15
ID, DRAIN SOURCE CURRENT
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
1.7
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(Normalized)
NEW PRODUCT
DMP2066LVT
1.5
1.3
1.1
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
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TA=150°C
VGS = 10V
TA=85°C
TA=125°C
0.04
0.03
0.02
TA=25°C
TA=-55°C
0.01
0
0
5
10
15
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
0.04
0.03
0.02
0.01
0
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 6 On-Resistance Variation with Temperature
February 2015
© Diodes Incorporated
VGS(th), GATE THRESHOLD VOLTAGE (V)
IS, SOURCE CURRENT (A)
1
0.8
ID= 1mA
0.6
ID= -250µA
0.4
16
12
TA= 25C
8
4
0.2
0
0.2
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
100000
f = 1MHz
CT, JUNCTION CAPACITANCE (pF)
TA = 150C
IDSS, LEAKAGE CURRENT (nA)
10000
1000
100
TA = 85 C
10
C ISS
1000
COSS
CRSS
TA = 25C
1
100
0
5
10
15
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
0
-4
-8
-12
-16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
-20
5
VGS, GATE SOURCE VOLTAGE (V)
NEW PRODUCT
DMP2066LVT
20
1.2
4
3
2
1
0
0
2
4
6
8
10 12 14
16
QG, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge Characteristics
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
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© Diodes Incorporated
DMP2066LVT
Package Outline Dimensions
TSOT26
D
NEW PRODUCT
e1
E
E1
L2
c
4x1
e
L

6x b
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00


A1
0.01 0.10

A2
0.84 0.90

D
2.90


E
2.80


E1
1.60


b
0.30 0.45

c
0.12 0.20

e
0.95


e1
1.90


L
0.30 0.50
L2
0.25


θ
0°
8°
4°
θ1
4°
12°

All Dimensions in mm
Suggested Pad Layout
TSOT26
C
C
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y1
Y (6x)
X (6x)
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
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February 2015
© Diodes Incorporated
DMP2066LVT
IMPORTANT NOTICE
NEW PRODUCT
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
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February 2015
© Diodes Incorporated