DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V(BR)DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data • DC-DC Converters • • Power Management Functions • • Battery Operated Systems and Solid-State Relays Case: SOT323 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020 • Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 e3 • Terminal Connections: See Diagram • Weight: 0.006 grams (approximate) SOT323 D D G G S S Pin Configuration Top View Top View Equivalent CircuitI Ordering Information (Note 4) Part Number DMN3065LW-7 DMN3065LW-13 Notes: Case SOT323 SOT323 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2012 Z Jan 1 2013 A Feb 2 DMN3065LW Document number: DS36078 Rev. 5 - 2 Mar 3 N35 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) YM N35 2014 B Apr 4 May 5 2015 C Jun 6 1 of 5 www.diodes.com 2016 D Jul 7 Aug 8 2017 E Sep 9 Oct O 2018 F Nov N Dec D April 2014 © Diodes Incorporated DMN3065LW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Unit Drain Source Voltage Characteristic VDSS 30 V Gate-Source Voltage VGSS ±12 V Drain Current (Note 5) ID 4 A Body-Diode Continuous Current (Note 5) IS 1 A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Operating and Storage Temperature Range Symbol Value Unit PD 770 mW RθJA 162 °C/W TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 µA VDS = 30V, VGS = 0V Gate-Body Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±12V, VDS = 0V VGS(th) 0.5 ⎯ 1.5 V VDS = VGS, ID = 250µA RDS (ON) ⎯ ⎯ ⎯ ⎯ ⎯ 52 65 85 mΩ VGS = 10V, ID = 4A VGS = 4.5V, ID = 3A VGS = 2.5V, ID = 2A VSD ⎯ ⎯ 1.2 V VGS = 0V, IS = 2.0A Input Capacitance Ciss ⎯ 465 ⎯ pF Output Capacitance Coss ⎯ 49.5 ⎯ pF Reverse Transfer Capacitance ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS(7) VDS = 15V, VGS = 0V, f = 1.0MHz Crss ⎯ 43.8 ⎯ pF Gate Resistance Rg ⎯ 2.3 ⎯ Ω VDS =0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS=10V) Qg ⎯ 11.7 ⎯ nC VDS = 15V, ID = 4 A Total Gate Charge (VGS=4.5V) Qg ⎯ 5.5 ⎯ nC Gate-Source Charge Qgs ⎯ 1.1 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.8 ⎯ nC Turn-On Delay Time tD(on) ⎯ 1.9 ⎯ ns Turn-On Rise Time tr ⎯ 1.6 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 10.3 ⎯ ns tf ⎯ 2.0 ⎯ ns Turn-Off Fall Time Notes: VDS = 15V, ID = 4 A VDD = 15V, VGEN = 10V, RGEN =3Ω, RL = 3.75Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to production testing. DMN3065LW Document number: DS36078 Rev. 5 - 2 2 of 5 www.diodes.com April 2014 © Diodes Incorporated DMN3065LW 10.0 20 VGS = 10V VDS = 5.0V 18 VGS = 4.5V 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8.0 VGS = 3.5V 6.0 VGS = 3.0V VGS = 2.0V 4.0 VGS = 2.5V 14 12 10 8 TA = 150°C 6 TA = 125°C 4 2.0 TA = 25°C T A = 85°C 2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0.1 VGS = 2.5V VGS = 4.5V VGS = 10V 0.01 1 VGS = 10V ID = 6A RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.8 1.6 VGS = 4.5V ID = 3A 1.4 1.2 VGS = 2.5V ID = 2A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (° C) Figure 5 On-Resistance Variation with Temperature DMN3065LW Document number: DS36078 Rev. 5 - 2 3 of 5 www.diodes.com 1 2 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.08 VGS = 4.5V 0.07 T A = 150°C 0.06 TA = 125°C 0.05 0.04 TA = 85°C T A = 25°C 0.03 TA = -55°C 0.02 0.01 0 3 5 7 9 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2 TA = -55°C 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.0 VGS = 1.5V 0 4 8 12 16 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.08 VGS = 2.5V ID = 2A 0.06 VGS = 4.5V ID = 3A 0.04 VGS = 10V ID = 6A 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN3065LW 20 18 16 1.6 1.2 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 2 ID = 1mA 0.8 ID = 250µA 0.4 14 12 10 TA = 25°C 8 6 4 2 0 -50 0 1,000 10 Ciss VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 100 Coss Crss 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 VDS = 15V ID = 4A 6 4 2 f = 1MHz 10 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 30 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 12 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K J M D DMN3065LW Document number: DS36078 Rev. 5 - 2 L 4 of 5 www.diodes.com April 2014 © Diodes Incorporated DMN3065LW Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C E X 1.9 1.0 E IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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