DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) max ID MAX TA = +25°C Low On-Resistance Low Gate Threshold Voltage, -0.9V Max -20V 70mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V -3.8A -3.3A Fast Switching Speed Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) NEW PRODUCT Description This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications Load Switch Power Management Functions Portable Power Adaptors U-DFN2020-6 Type B D G S 3 2 1 Case: U-DFN2020-6 Type B Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) D2 D1 S2 G2 D2 D1 D2 4 5 6 S G D G1 S1 Pin1 G2 G1 D1 Top View Internal Schematic Bottom View S2 S1 Q1 P-CHANNEL Q2 P-CHANNEL Internal Schematic Ordering Information (Note 5) Part Number DMP2160UFDBQ-7 Notes: Case U-DFN2020-6 Type B Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/ 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMP2160UFDBQ Document Number: DS37546 Rev. 1 - 2 1 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP2160UFDBQ Marking Information NEW PRODUCT Date Code Key Year Code 2008 V 2009 W Month Code Jan 1 Feb 2 2010 X Mar 3 2011 Y Apr 4 YM P2 P2 = Marking Code YM = Date Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1 2012 Z May 5 2013 A Jun 6 2014 B Jul 7 2015 C Aug 8 2016 D Sep 9 Oct O 2017 E 2018 F Nov N Dec D Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 6) Pulsed Drain Current (Note 7) Symbol VDSS VGSS ID IDM Value -20 ±12 -3.8 -13 Units V V A A Value 1.4 89 -55 to +150 Unit W °C/W °C Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 8) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol PD RJA TJ, TSTG Symbol Min Typ Max Unit BVDSS IDSS -20 -1 100 800 V A VGS(th) -0.45 -0.9 V RDS (ON) 54 68 86 70 85 mΩ VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A |Yfs| VSD 8 0.7 -1.2 S V VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A Ciss Coss Crss 536 68 59 8.72 pF pF pF VDS = -10V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC ns ns ns ns IGSS Total Gate Charge Qg Gate-Source Charge Gate-Drain Charge Qgs Qgd Turn-On Delay Time tD(on) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tr Gate Resistance Notes: 6. 7. 8. Rg tD(off) tf 6.5 0.8 1.4 11.51 12.09 55.34 27.54 nA Test Condition VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VGS = -4.5V, VDD = -10V, ID = -1.5A VGEN = -4.5V, VDD = -10V, RL = 10Ω, RG = 6Ω Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. Repetitive rating, pulse width limited by junction temperature. Short duration pulse test used to minimize self-heating effect. DMP2160UFDBQ Document Number: DS37546 Rev. 1 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP2160UFDBQ 10 10 VGS = -8.0V VDS = -5V VGS = -4.5V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 8 VGS = -2.5V VGS = -2.0V 6 VGS = -1.5V 4 VGS = -1.0V 0 0 4 TA = 150°C VGS = -1.2V 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 0.1 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -2.5V ID = -2A VGS = -4.5V ID = -5A 1.0 0.8 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMP2160UFDBQ Document Number: DS37546 Rev. 1 - 2 0.12 0.1 TA = 150°C TA = 125°C 0.08 TA = 85°C 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.4 0.6 -50 2 0.14 8 1.6 1.2 1 1.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0.12 VGS = -1.8V TA = 85°C TA = -55°C 0 0.5 0.14 0.08 TA = 125°C TA = 25°C R DS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 2 2 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 8 3 of 6 www.diodes.com 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 8 0.11 0.09 VGS = -2.5V ID = -2A 0.07 VGS = -4.5V ID = -5A 0.05 0.03 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated DMP2160UFDBQ 10,000 1 -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1,000 Ciss 100 Coss Crss 0 4 8 12 16 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 0.9 0.8 0.7 0.6 ID = -1mA 0.5 ID = -250µA 0.4 0.3 0.2 -50 10 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature 20 10,000 -IDSS, LEAKAGE CURRENT (nA) 10 -IS, SOURCE CURRENT (A) 8 6 TA = 25°C 4 2 TA = 150°C 1,000 TA = 125°C TA = 85°C 100 0 10 TA = 25°C 1 0 0 4 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -V SD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT C, CAPACITANCE (pF) f = 1MHz D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.9 D = 0.1 D = 0.05 RJA(t) = r(t) * RJA RJA = 146°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2 D = 0.005 0.001 0.00001 t1 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) 10 100 1,000 Fig. 11 Transient Thermal Response DMP2160UFDBQ Document Number: DS37546 Rev. 1 - 2 4 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP2160UFDBQ Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 SEATING PLANE A1 NEW PRODUCT D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Z G G1 X1 X2 Y Y1 C G X2 G1 X1 G Y1 Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65 Z DMP2160UFDBQ Document Number: DS37546 Rev. 1 - 2 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP2160UFDBQ IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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