DMP3085LSD P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) MAX Package -30V 70mΩ @VGS = -10V 95mΩ @VGS = -4.5V SO-8 ID TA = +25°C -3.9A -3.3A Description Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic, "Green" Molding Compound Applications Backlighting Power Management Functions DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper lead frame Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) S1 D1 G1 D1 S2 D2 G2 D2 D1 G1 D2 G2 S1 Top View Internal Schematic Top View S2 Equivalent Circuit (Note 4) Part Number DMP3085LSD-13 Notes: UL Flammability Classification Rating 94V-0 SO-8 Ordering Information Case SO-8 Packaging 2500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information Top View 8 5 Logo Part no. P3085SD YY WW Xth week: 01~53 Year: “12” = 2012 1 DMP3085LSD Document number: DS36194 Rev. 1 - 0 4 1 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3085LSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±20 -3.9 -3.1 ID A -4.9 -3.9 -2.5 20 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 1.1 0.7 107 70 1.7 1.1 75 50 14.5 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250µA VDS =-30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD — 50 75 5.8 -0.7 -3 70 95 — -1.2 V Static Drain-Source On-Resistance -1 — — — — S V VDS = VGS, ID = -250µA VGS = -10V, ID = -5.3A VGS = -4.5V, ID = -4.2A VDS = -5V, ID = -5.3A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 563 48 41 10.3 5.2 11 1.7 1.9 4.8 5 31 14.6 — — — — — — — — — — — — pF VDS = -25V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -15V, ID = -3.8A nS VDS = -15V, VGS = -10V, ID = -1A, RG = 6.0Ω Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP3085LSD Document number: DS36194 Rev. 1 - 0 2 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3085LSD 16.0 20 VGS = -10V VGS = -4.0V VGS = -3.0V 4.0 TA = -55°C 8 4 VGS = -2.5V VGS = -2.0V 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 1.0 VGS = -4.5V 0.1 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 25°C 12 8.0 VGS = -10V 0.01 1 2 3 4 5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 1.8 VGS = -10V ID = -5.3A 1.6 1.4 1.2 VGS = -4.5V ID = -4.2A 1 0.8 0.6 0.4 0.2 0 -50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2 75 100 125 150 -25 0 25 50 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP3085LSD Document number: DS36194 Rev. 1 - 0 3 of 6 www.diodes.com 6 0.4 VGS = -4.5V 0.35 0.3 T A = 150C 0.25 TA = 125C 0.2 T A = 85C 0.15 T A = 25C 0.1 T A = -55C 0.05 0 0 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) T A = 85°C TA = 125°C 16 VGS = -4.5V 12.0 0.0 TA = 150°C VDS = -5.0V -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 20.0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.16 0.14 0.12 VGS = -4.5V ID = -4.2A 0.1 0.08 0.06 VGS = -10V ID = -5.3A 0.04 0.02 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature May 2013 © Diodes Incorporated DMP3085LSD 20 -I D = 1mA 1.6 16 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2.4 -ID = 250µA 0.8 12 8 TA= 25°C 4 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 1000 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 10 f = 1MHz Ciss 9 -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 0 100 Coss Crss 8 7 VDS = -15V ID = -3.8A 6 5 4 3 2 1 10 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance DMP3085LSD Document number: DS36194 Rev. 1 - 0 4 of 6 www.diodes.com 0 0 2 4 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 12 May 2013 © Diodes Incorporated DMP3085LSD Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Gauge Plane Seating Plane Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y DMP3085LSD Document number: DS36194 Rev. 1 - 0 5 of 6 www.diodes.com May 2013 © Diodes Incorporated DMP3085LSD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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