DMP4047SSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID TA = +25°C 100% Unclamped Inductive Switch (UIS) test in production Low on-resistance 45mΩ @ VGS = -10V -6.5A Fast switching speed 55mΩ @ VGS = -4.5V -5.9A Totally Lead-Free & Fully RoHS compliant (Note 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS RDS(on) -40V NEW PRODUCT Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Backlighting DC-DC Converters Power Management Functions Mechanical Data Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S1 Top View Pin-Out Top View D2 S2 Equivalent Circuit Ordering Information (Note 4 & 5) Part Number DMP4047SSD-13 DMP4047SSDQ-13 Notes: Compliance Standard Automotive Case SO-8 SO-8 Packaging 2,500/Tape & Reel 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 = Manufacturer’s Marking P4047SD = Product Type Marking Code . YYWW = Date Code Marking YY = Year (ex: 09 = 2009) WW = Week (01 - 53) P4047SD YY WW 1 DMP4047SSD Document Number DS36353 Rev. 3 - 2 4 1 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP4047SSD Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State NEW PRODUCT t < 10s Continuous Drain Current (Note 7) VGS = -4.5V Steady State t < 10s ID Value -40 ±20 -5.1 -4.1 ID -6.5 -5.2 A ID -4.6 -3.7 A A -5.9 -4.7 -2.5 -40 ID Maximum Body Diode Continuous Current Pulsed Drain Current (10µs pulse, duty cycle = 1%) Units V V IS IDM A A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t < 10s TA = +25°C TA = +70°C Steady state t < 10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Value 1.3 0.8 98 59 1.8 1.1 71 43 11.8 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) mΩ VSD -3.0 45 55 -1.2 V Static Drain-Source On-Resistance 33 40 -0.75 VDS = VGS, ID = -250μA VGS = -10V, ID = -4.4A VGS = -4.5V, ID = -3.7A VGS = 0V, IS = -3.9A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 1154 84 66 12.6 10.6 21.5 2.2 3.3 8.7 19.6 34.9 25.5 9.61 3.3 pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: V Test Condition VDS = -20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -20V, ID = -4.9A VDS = -20V, ID = -3.9A VGS = 4.5V, RG = 1Ω IF = -3.9A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP4047SSD Document Number DS36353 Rev. 3 - 2 2 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP4047SSD 30 -ID, DRAIN CURRENT (A) VDS = -5.0V VGS = -3.5V VGS = -5.0V 20 VGS = -4.5V VGS = -4.0V VGS = -3.0V 15 10 VGS = -2.5V TA = 125C TA = 85C 5 T A = 150 C VGS = -2.0V 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.2 VGS = -2.5V 0.18 0.16 0.14 0.12 0.1 0.08 0.06 VGS = -4.5V 0.04 VGS = -10V 0.02 0 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 20 VGS = -10V ID = -10A 1.5 VGS = -4.5V ID = -5A 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMP4047SSD Document Number DS36353 Rev. 3 - 2 TA = 25C TA = -55C RDS(on), DRAIN-SOURCE ON-RESISTANCE () 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 VGS = -10V 3 of 5 www.diodes.com 0.1 VGS = -4.5V 0.09 0.08 TA = 150°C 0.07 T A = 125°C 0.06 TA = 85°C 0.05 TA = 25°C 0.04 0.03 T A = -55°C 0.02 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.08 0.07 0.06 VGS = -4.5V ID = -5A 0.05 0.04 VGS = -10V ID = -10A 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature September 2013 © Diodes Incorporated DMP4047SSD 30 1.8 25 1.6 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ID = -1mA 1.4 1.2 1.0 ID = -250µA 0.8 0.6 0.4 20 15 TA= 25C 10 5 0.2 0 -50 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature r(t), TRANSIENT THERMAL RESISTANCE 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current D = 0.7 D = 0.5 D = 0.3 D = 0.1 D = 0.9 D = 0.05 D = 0.02 D = 0.01 D = 0.005 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 9 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. 0.254 NEW PRODUCT 2.0 E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h A2 A A3 7°~9° 45° Detail ‘A’ SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm b e D DMP4047SSD Document Number DS36353 Rev. 3 - 2 4 of 5 www.diodes.com September 2013 © Diodes Incorporated DMP4047SSD Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions X Y C1 C2 C1 NEW PRODUCT C2 Value (in mm) 0.60 1.55 5.4 1.27 Y IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2013, Diodes Incorporated www.diodes.com DMP4047SSD Document Number DS36353 Rev. 3 - 2 5 of 5 www.diodes.com September 2013 © Diodes Incorporated