Not Recommended for New Design Please Use ZXTP5401FL SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 4 - NOVEMBER 1996 ✪ PARTMARKING DETAILS - FMMT5400 - 1LZ FMMT5401 - Z2L COMPLEMENTARY TYPES - FMMT5400 FMMT5401 E C FMMT5400 FMMT5550 FMMT5401 FMMT5551 B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO FMMT5400 FMMT5401 -130 -160 UNIT V Collector-Emitter Voltage VCEO -120 -150 V Emitter-Base Voltage VEBO -5 -5 V Continuous Collector Current IC -600 -600 mA Power Dissipation at Tamb=25°C Ptot 330 330 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). FMMT5400 FMMT5401 PARAMETER SYMBOL MIN. MAX. MIN. Collector-Base Breakdown Voltage V(BR)CBO -130 -160 V IC=-100µ A Collector-Emitter Breakdown Voltage V(BR)CEO -120 -150 V IC=-1mA Emitter-Base Breakdown Voltage V(BR)EBO -5 -5 V IE=-10µ A Collector Cut-Off Current ICBO Static Forward Current Transfer Ratio hFE Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.5 -0.2 -0.5 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Base-Emitter Saturation Voltage VBE(sat) -1.0 -1.0 -1.0 -1.0 V V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA Transition Frequency fT Output Capacitance Cobo Small Signal hfe Noise Figure NF -100 -100 30 40 40 100 -180 400 -50 -50 50 60 50 100 6.0 30 200 MAX. 8 Periodic Sample Test Only PAGE NUMBER nA µA nA µA 300 MHz IC=-10mA, VCE=-10V f=100MHz pF 260 8 VCB=-100V VCB=-100V, TA=100°C VCB=-120V VCB=-120V, TA=100°C IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-50mA, VCE=-5V 240 6.0 40 UNIT CONDITIONS. VCB=-10V, f=1MHz IC=-1mA, VCE=-10V f=1KHz dB IC=-250µ A, VCE=-5V, RS=1KΩ f=10Hz to 15.7KHz