ETC FMMT5209

SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 - JULY 1995
FMMT5209
FMMT5210
✪
PARTMARKING DETAILS:
FMMT5209 - 2Q
FMMT5210 - 2R
E
C
B
SOT23
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
Emitter-Base Voltage
FMMT5209
FMMT5210
UNIT
50
V
VCEO
50
V
VEBO
4.5
V
Continuous Collector Current
IC
50
mA
Power Dissipation
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 TO +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base
Cut-Off Current
FMMT5209
MIN.
FMMT5210
UNIT CONDITIONS.
MAX. MIN.
MAX.
ICBO
50
50
nA
VCB=35V, IE=0
Emitter-Base
Cut-Off Current
IEBO
50
50
nA
VEB=3V, IC=0
Collector-Emitter
Saturation Voltage
VCE(sat)
700
700
mV
IC=10mA, IB=1mA
Base-Emitter ON
Voltage
VBE(on)
850
850
mV
IC=1mA, VCE=5V
Static Forward
Current Transfer
Ratio
hFE
100
300
200
600
IC=100µA, VCE=5V
150
250
IC=1mA, VCE=5V
150
250
IC=10mA, VCE=5V*
Transition Frequency fT
30
30
Small Signal Current hfe
Transfer Ratio
150
Noise Figure
Output Capacitance
N
Cobo
600
250
900
MHz
IC=0.5mA, VCE=5V,
f=20MHz
MHz
IC=1mA, VCE=5V, f=1KHz
3
2
dB
IC=200µA, VCE=5V, Rg=2KΩ,
f=30Hz to 15KHz at -3dB
points
4
3
dB
IC=200µA, VCE=5V, Rg=2KΩ,
f=1KHz to ∆f=200Hz
4
4
pF
VCB=5V, IE=0, f=140KHz