SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS ISSUE 2 - JULY 1995 FMMT5209 FMMT5210 ✪ PARTMARKING DETAILS: FMMT5209 - 2Q FMMT5210 - 2R E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage FMMT5209 FMMT5210 UNIT 50 V VCEO 50 V VEBO 4.5 V Continuous Collector Current IC 50 mA Power Dissipation Ptot 330 mW Operating and Storage Temperature Range Tj:Tstg -55 TO +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL Collector-Base Cut-Off Current FMMT5209 MIN. FMMT5210 UNIT CONDITIONS. MAX. MIN. MAX. ICBO 50 50 nA VCB=35V, IE=0 Emitter-Base Cut-Off Current IEBO 50 50 nA VEB=3V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 700 700 mV IC=10mA, IB=1mA Base-Emitter ON Voltage VBE(on) 850 850 mV IC=1mA, VCE=5V Static Forward Current Transfer Ratio hFE 100 300 200 600 IC=100µA, VCE=5V 150 250 IC=1mA, VCE=5V 150 250 IC=10mA, VCE=5V* Transition Frequency fT 30 30 Small Signal Current hfe Transfer Ratio 150 Noise Figure Output Capacitance N Cobo 600 250 900 MHz IC=0.5mA, VCE=5V, f=20MHz MHz IC=1mA, VCE=5V, f=1KHz 3 2 dB IC=200µA, VCE=5V, Rg=2KΩ, f=30Hz to 15KHz at -3dB points 4 3 dB IC=200µA, VCE=5V, Rg=2KΩ, f=1KHz to ∆f=200Hz 4 4 pF VCB=5V, IE=0, f=140KHz