DMP2540UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT ADVANCE INFORMATION Product Summary (Typ. @ VGS = -4.5V, TA Features and Benefits = +25°C) VDSS RDS(on) Qg Qgd ID -25V 33mΩ 4.8nC 1.0nC -5.2A LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 33mΩ to Minimize On-State Losses Qg = 4.8nC for Ultra-Fast Switching Vgs(th) = -0.6V typ. for a Low Turn-On Potential CSP with Footprint 1.5mm × 1.5mm Height = 0.62mm for Low Profile ESD = 6kV HBM Protection of Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: U-WLB1515-9 Terminal Connections: See Diagram Below Weight: 0.0018 grams (Approximate) Battery Management Load Switch Battery Protection Drain G D S D D S Gate D ESD PROTECTED TO 6kV S S Gate Protection Diode Top-View Pin Configuration Source Equivalent Circuit Ordering Information (Note 4) Part Number DMP2540UCB9-7 Notes: Case U-WLB1515-9 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-WLB1515-9 3W = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 3W YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP2540UCB9 Document number: DS35611 Rev. 5 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D May 2015 © Diodes Incorporated DMP2540UCB9 Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT ADVANCE INFORMATION Continuous Drain Current (Note 5) VGS = -4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Steady State Pulsed Drain Current (Pulse duration 10μs, duty cycle ≤1%) Continuous Source Pin Current (Note 6) Pulsed Source Pin Current (Pulse duration 10μs, duty cycle ≤1%) Continuous Gate Clamp Current (Note 5) Pulsed Gate Clamp Current (Pulse duration 10μs, duty cycle ≤1%) Continuous Drain Current (Note 6) VGS = -4.5V Value -25 -6 -4.0 -3.0 -5.2 -4.0 -30 -2.0 -15 -0.6 -8 ID IDM IS ISM IG IGM Units V V A A A A A A A Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD PD RJA RJA TJ, TSTG Value 1.0 1.8 126.8 69 -55 to +150 Units W W °C/W °C/W °C (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @TC = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -25 - - -1 -100 V μA nA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = -6V, VDS = 0V VGS(th) -0.4 RDS (ON) - |Yfs| VSD Qrr trr - -1.1 40 50 60 -1 - V Static Drain-Source On-Resistance -0.6 33 42 52 12 -0.7 100 130 VDS = VGS, ID = -250μA VGS = -4.5V, ID = - 2A VGS = -2.5V, ID = -2A VGS = -1.8V, ID = -2A VDS = -10V, ID = -2A VGS = 0V, IS = -2A Vdd = –9.5V, IF = –2A, di/dt = 200A/μs Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf - 342 174 70 28 4.8 0.5 1.0 11 12 56 42 450 225 90 35 6.0 - Forward Transfer Admittance Diode Forward Voltage (Note 5) Reverse Recovery Charge Reverse Recovery Time DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Series Gate Resistance Total Gate Charge (4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: - mΩ S V nC ns pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V, ID = -2A VDD = -10V, VGS = -4.5V, IDS = -2A, RG = 2Ω, 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMP2540UCB9 Document number: DS35611 Rev. 5 - 2 2 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP2540UCB9 10 10 VGS = 8.0V VGS = 4.5V 8 -ID, DRAIN CURRENT (A) 8 -ID, DRAIN CURRENT (A) VGS = 2.0V VGS = 1.5V 6 VGS = 1.8V 4 2 VGS = 1.2V 6 4 TA = 150C 2 T A = 125 C TA = 85C TA = 25C TA = -55C 0 0 0.4 0.8 1.2 1.6 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 0 2.0 0.10 1 2 3 4 5 6 7 8 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 9 1.3 1.1 0.9 0.7 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature DMP2540UCB9 Document number: DS35611 Rev. 5 - 2 0.5 1.0 1.5 -V GS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 of 6 www.diodes.com 2.0 0.06 VGS = -4.5V TA = 150C 0.05 T A = 125 C TA = 85C 0.04 TA = 25C 0.03 TA = -55 C 0.02 0 RDS(on), DRAIN-SOURCE ON-RESISTANCE () 1.5 0.5 -50 0 10 1.7 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT ADVANCE INFORMATION VDS = -5.0V VGS = 2.5V 2 4 6 8 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.10 0.09 0.08 0.07 VGS = -2.5V ID = -2A 0.06 0.05 0.04 VGS = -4.5V ID = -4A 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature May 2015 © Diodes Incorporated DMP2540UCB9 VGS(TH), GATE THRESHOLD VOLTAGE(V) 10 1.2 -IS, SOURCE CURRENT (A) 8 1.0 0.8 0.6 0.4 6 4 2 0.2 0 -50 0 0.4 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1,000 1,000 IGSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) f = 1MHz C iss Coss 100 Crss TA = 150°C 100 TA = 125°C TA = 85°C 10 TA = 25°C TA = -55°C 1 10 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 10 Gate-Source Leakage Current vs. Voltage 20 100 6 RDS(on) Limited 5 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION 1.4 4 3 2 0 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C TA = 25°C VGS = -8V Single Pulse DUT on 1 * MRP Board 1 0 1 2 3 4 5 6 7 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP2540UCB9 Document number: DS35611 Rev. 5 - 2 8 0.01 0.1 4 of 6 www.diodes.com PW = 10µs PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area 100 May 2015 © Diodes Incorporated DMP2540UCB9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION 1 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 70°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D 6X-Ø b PIN ID Dim A A2 A3 b D E e e E e e e A3 A2 U-WLB1515-9 Min Max Typ 0.62 0.36 0.36 0.020 0.030 0.025 0.27 0.37 0.32 1.47 1.51 1.49 1.47 1.51 1.49 0.50 All Dimensions in mm A SEATING PLANE Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D Dimensions C1 C C1 C2 D C Value (in mm) 0.50 1.00 1.00 0.25 C C2 DMP2540UCB9 Document number: DS35611 Rev. 5 - 2 5 of 6 www.diodes.com May 2015 © Diodes Incorporated DMP2540UCB9 NEW PRODUCT ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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