DMN1019UVT 12V N-CHANNEL ENHANCEMENT MODE MOSFET Features V(BR)DSS RDS(ON) MAX 12V 10mΩ @ VGS = 4.5V 12mΩ @ VGS = 2.5V 14mΩ @ VGS = 1.8V 18mΩ @ VGS = 1.5V 41mΩ @ VGS = 1.2V ID TA = +25°C 10.7A 9.8A 9.1A 8.0A 5.3A Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Case: TSOT26 Case Material – Molded Plastic. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.008 grams (Approximate) Applications Load Switch DC-DC Converters Power Management Functions D TSOT26 ESD PROTECTED D 1 6 D D 2 5 D G 3 4 S G Gate Protection Diode Top View Pin Configuration Top View S Equivalent Circuit Ordering Information (Note 4) Part Number DMN1019UVT-7 DMN1019UVT-13 Notes: Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMN Date Code Key Year Code Month Code YM NEW PRODUCT Product Summary DMN = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) 2015 2016 2017 2018 2019 2020 2021 2022 C D E F G H I J Jan 1 Feb 2 DMN1019UVT Document number: DS37506 Rev. 2 - 2 Mar 3 Apr 4 May 5 Jun 6 1 of 7 www.diodes.com Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D April 2015 © Diodes Incorporated DMN1019UVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C NEW PRODUCT t<10s Value 12 ±8 10.7 8.6 ID A 12.7 10.1 70 2 9.7 4.7 ID Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Maximum Body Diode Forward Current (Note 5) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L =0.1mH Units V V IDM IS IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Electrical Characteristics PD RθJA RθJC TJ, TSTG Value 1.73 1.11 72.2 37.5 14.4 -55 to +150 Units W °C/W °C/W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 12 — — — — — — 1 ±2 V µA µA VGS = 0V, ID = 250µA VDS = 12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(TH) RDS(ON) VSD 0.53 7 8 10 14 28 0.8 0.8 10 12 14 18 41 1.2 V Static Drain-Source On-Resistance 0.35 — — — — — — VDS = VGS, ID = 250µA VGS = 4.5V, ID = 9.7A VGS = 2.5V, ID = 9A VGS = 1.8V, ID = 8.1A VGS = 1.5V, ID = 4.5A VGS = 1.2V, ID = 2.4A VGS = 0V, IS = 10A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tD(OFF) tR tF tRR — — — — — — — — — — — — — 2588 415 394 1.1 50.4 28.0 3.2 5.6 4.7 32.2 3.7 11.6 20.55 — — — — — — — — — — — — — Qrr — 4.5 — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 8V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ V pF pF pF Ω nC ns ns ns ns ns nC Test Condition VDS = 10V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 4V, ID = 10A VDD = 4V, VGEN = 5V, ID = 10A, RG = 1Ω, RL = 0.4Ω IF = 10A, di/dt = 100A/μs IF = 10A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN1019UVT Document number: DS37506 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN1019UVT 25.0 10 VDS=5.0V VGS=1.5V VGS=2.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8 VGS=2.5V VGS=3.0V 15.0 VGS=4.5V VGS=8.0V 10.0 VGS=1.2V 6 4 85℃ 150℃ 2 5.0 125℃ 25℃ VGS=1.0V -55℃ 0 0.0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic VGS=1.5V VGS=2.5V 0.01 VGS=4.5V 0.005 0 0.04 ID=9.7A 0.03 0.02 VGS=4.5V 85℃ 0.01 25℃ -55℃ 0.005 ID=4.5A 0 1 2 3 4 5 6 7 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical On-Resistance vs Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.015 ID=8.1A 0.01 4 8 12 16 20 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs Drain Current and Gate Voltage 125℃ 2 0.05 0 150℃ 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 0.02 0.015 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 20.0 2 1.8 1.6 VGS=2.5V, ID=9A 1.4 VGS=4.5V, ID=9.7A 1.2 1 VGS=1.8V, ID=8.1A VGS=1.5V, ID=4.5A 0.8 0.6 0.4 0 0 3 6 9 12 15 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs Drain Current and Temperature DMN1019UVT Document number: DS37506 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMN1019UVT VGS(TH), GATE THESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE (NORMALIZED) 0.9 VGS=1.8V, ID=8.1A VGS=1.5V, ID=4.5A 0.015 0.01 VGS=4.5V, ID=9.7A 0.005 VGS=2.5V, ID=9A 0.6 ID=1mA ID=250µA 0.3 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7 On-Resistance Variation with Temperature 20 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8 Gate Theshold Variation vs Junction Temperature 100000 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) VGS=0V 15 10 TA=85℃ 5 TA=150℃ TA=25℃ TA=125℃ 150℃ 10000 125℃ 1000 85℃ 100 10 25℃ TA=-55℃ 1 0 0 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs Current 1 1.2 10000 2 3 4 5 6 7 8 9 10 11 12 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Drain-Source Leakge Current vs Voltage 8 f=1MHz 7 6 Ciss 5 VGS (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 0.02 1000 Coss 4 3 VDS=4V, ID=10A Crss 2 1 0 100 0 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Typical Junction Capacitance DMN1019UVT Document number: DS37506 Rev. 2 - 2 12 0 10 20 30 Qg (nC) 40 50 60 Figure 12 Gate Charge 4 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN1019UVT 100 ID, DRAIN CURRENT (A) 10 DC PW =10s PW =1s PW =100ms 1 PW =10ms PW =1ms TJ(Max)=150℃ PW =100µs TA=25℃ VGS=4.5V Single Pulse DUT on 1*MRP Board 0.1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 13 SOA, Safe Operation Area 1 D=0.9 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT RDS(ON) Limited D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=107℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 0.0001 DMN1019UVT Document number: DS37506 Rev. 2 - 2 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 14 Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 10000 April 2015 © Diodes Incorporated DMN1019UVT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D NEW PRODUCT e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMN1019UVT Document number: DS37506 Rev. 2 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN1019UVT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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