DMN2023UCB4 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features V(BR)DSS RSS(ON) Package 24V 26mΩ @ VGS = 4.5V X1-WLB1818-4 IS TA = +25°C 6.0A Built-in G-S Protection Diode Against ESD 2kV HBM Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) with thin WLCSP packaging process and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X1-WLB1818-4 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Battery Management Load Switch Battery Protection X1-WLB1818-4 G1 G2 ESD PROTECTED TO 2kV N-Channel S1 Top View N-Channel S2 Equivalent Circuit Ordering Information (Note 4) Part Number DMN2023UCB4-7 Notes: Case X1-WLB1818-4 Packaging 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information X1-WLB1818-4 8W = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: Y = 2011) M or M = Month (ex: 9 = September) 8W YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 8 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2015 © Diodes Incorporated DMN2023UCB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage (Note 5) Continuous Source Current @ TA = +25°C (Note 6) Steady State Symbol Value Units VSSS 24 V VGSS 12 V IS 6.0 4.8 A ISM 20 A Symbol Value Units PD 1.45 W RJA 88.21 °C/W TJ, TSTG -55 to +150 C TA = +25°C TA = +70°C Pulsed Source Current @ TA = +25°C (Notes 6 & 7) Thermal Characteristics Characteristic Power Dissipation, @ TA = +25°C (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Symbol Min Typ Max Unit Test Condition Source to Source Breakdown Voltage TJ = +25°C V(BR)SS 24 — — V IS = 1mA, VGS = V TEST CIRCUIT 1 Zero Gate Voltage Source Current TJ = +25°C ISSS — — 1.0 µA VSS = 20V, VGS = 0V TEST CIRCUIT 1 Gate-Body Leakage IGSS — — 10 µA VGS = 8V, VDS = 0V TEST CIRCUIT 2 VGS(th) 0.5 — 1.3 V VSS = 10V, IS = 1.0mA TEST CIRCUIT 3 17 21.5 25.5 VGS = 6.5V, IS = 3.0A TEST CIRCUIT 5 17.5 22 26 VGS = 4.5V, IS = 3.0A TEST CIRCUIT 5 18.5 23 27 19 23.5 29 19.5 24 33 21.5 27 40 |Yfs| — 12 — S VSS = 10V, IS = 3.0A TEST CIRCUIT 4 VF(S-S) — 0.7 1 V IF = 3.0A, VGS = 0V, TEST CIRCUIT 6 Input Capacitance Ciss — 2564 3333 Output Capacitance Coss — 197 275 pF Reverse Transfer Capacitance Crss — VSS = 10V, VGS = 0V, f = 1.0MHz TEST CIRCUIT 7 183 260 Total Gate Charge Qg — 29 37 nC VGS = 4.5V, VSS = 10V, IS = 6A TEST CIRCUIT 9 Turn-On Delay Time tD(on) — 10 15 ns Turn-On Rise Time tr — 20 — ns Turn-Off Delay Time tD(off) — 75 110 ns tf — 29 — ns ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Source -Source On-Resistance Forward Transfer Admittance Body Diode Forward Voltage RSS (ON) mΩ VGS = 4.0V, IS = 3.0A TEST CIRCUIT 5 VGS = 3.7V, IS = 3.0A TEST CIRCUIT 5 VGS = 3.1V, IS = 3.0A TEST CIRCUIT 5 VGS = 2.5V, IS = 3.0A TEST CIRCUIT 5 DYNAMIC CHARACTERISTICS (Note 9) Turn-Off Fall Time Notes: VDD = 10V, RL = 3.33Ω, IS = 3.0A TEST CIRCUIT 8 5. AEC-Q101 VGS maximum is ±9.6V. 6. Device mounted on FR4 material with 1-inch2 (6.45-cm2),2-oz.(0.071-mm thick) Cu. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 2 of 8 www.diodes.com March 2015 © Diodes Incorporated DMN2023UCB4 10.0 10 VGS = 4.5V 9.0 9 VGS = 4.0V 8.0 8 VGS = 2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 1.5V VGS = 2.0V 7.0 6.0 5.0 4.0 3.0 VGS = 1.2V 2.0 7 6 5 4 TA = 150°C 3 TA = 125°C TA = 85°C 2 TA = 25°C 1.0 0.0 1 VGS = 1.0V 0 0.4 0.8 1.2 1.6 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.04 0.03 VGS = 3.7V VGS = 3.1V VGS = 2.5V 0.02 VGS = 4.5V VGS = 4.0V 0.01 0 0 1 2 3 4 5 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 1 0.5 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 of 8 www.diodes.com 2 0.04 VGS = 4.5V TA = 150°C TA = 125°C 0.03 T A = 85°C TA = 25°C 0.02 TA = -55°C 0.01 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 3A 0 -50 TA = -55°C 6 2 1.5 0 1 2 3 4 5 6 7 8 9 ID, DRAIN CURRENT (A) Figure 4. Typical On-Resistance vs. Drain Current and Temperature 10 0.04 0.03 0.02 VGS = 4.5V ID = 3A 0.01 0 TJ, JUNCTION TEMPERATURE ( C) Figure 6 On-Resistance Variation with Temperature March 2015 © Diodes Incorporated DMN2023UCB4 10 9 IS, SOURCE CURRENT (A) 8 0.8 ID = 1mA ID = 250µA 0.6 0.4 6 5 4 TA = 150°C 3 TA = 25°C TA = 125°C 2 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature TA = 150°C TA = 125°C 1000 100 TA = 85°C 10 1 0.1 TA = 25°C 6 9 12 15 18 21 24 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Drain-Source Leakage Current vs. Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) 0 3 0.03 0.027 VGS = 6.5V 0.024 0.021 0.018 0.015 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 ID , DRAIN-SOURCE CURRENT Figure 11 Typical On-Resistance vs. Drain Current and Gate Voltage DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 1.5 10000 IGSS, GATE-SOURCE LEAKAGE CURRENT (nA) 10000 TA = -55°C TA = 85°C 1 0.2 -50 IDSS, DRAIN LEAKAGE CURRENT (nA) 7 5 TA = 150°C 1000 TA = 125°C TA = 85°C 100 TA = 25°C 10 TA = -55°C 1 0.1 1 R DS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) VGS(th), GATE THRESHOLD VOLTAGE (V) 1 2 3 4 5 6 7 8 V GS, GATE-SOURCE VOLTAGE (V) Figure 10 Typical Gate-Source Leakage Current vs. Gate-Source Voltage 0.035 0.033 0.031 0.029 0.027 I D = 3.0A 0.025 0.023 0.021 0.019 0.017 0.015 1 4 of 8 www.diodes.com 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 12 Typical Transfer Characteristic 8 March 2015 © Diodes Incorporated DMN2023UCB4 100 I D, DRAIN CURRENT (A) R DS(on) Limited PW = 10µs 10 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 TJ(m ax) = 150°C PW = 10ms TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.01 PW = 1ms PW = 100µs 0.1 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 13 SOA, Safe Operation Area 100 Test Circuits TEST CIRCUIT 1 ISSS TEST CIRCUIT 2 IGSS When FET1 is measured, between GATE and SOURCE of FET2 are shorted. TEST CIRCUIT 3 VGS(off) When FET1 is measured, between GATE and SOURCE of FET2 are shorted. TEST CIRCUIT 4 |yfs| ΔIS/ΔVGS DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 5 of 8 www.diodes.com March 2015 © Diodes Incorporated DMN2023UCB4 Test Circuits (cont.) TEST CIRCUIT 5 RSS(on) VSS/IS TEST CIRCUIT 6 VF(S-S) When FET1 is measured,FET2 is added VGS +4.5V. TEST CIRCUIT 7 TEST CIRCUIT 8 td(on), tr, td(off), tf TEST CIRCUIT 9 QG DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 6 of 8 www.diodes.com March 2015 © Diodes Incorporated DMN2023UCB4 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version D e B Ø b (4x) X1-WLB1818-4 Dim Min Max Typ A 0.3420 0.4080 0.3750 A1 0.1350 0.1650 0.1500 A2 0.1850 0.2150 0.2000 A3 0.0220 0.0280 0.0250 b 0.2700 0.3300 0.3000 D 1.7800 1.8000 1.7900 E 1.7800 1.8000 1.7900 e 0.650 BSC All Dimensions in mm B e E A A PIN#1 1 2 2 A2 1 A3(Backside Coating) A Seating Plane A1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. D (4x) C Dimensions C 1 DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 C D Value (in mm) 0.650 0.300 2 7 of 8 www.diodes.com March 2015 © Diodes Incorporated DMN2023UCB4 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMN2023UCB4 Document number: DS35829 Rev. 10 - 2 8 of 8 www.diodes.com March 2015 © Diodes Incorporated